Simplified high reliability gate oxide process

Claim 2

A wafer fabrication process comprising CMOS fabrication steps for fabricating CMOS transistors in a substrate of semiconductor material including an NWELL definition mask, etch, and N type dopant material introduction sequence forming an NWELL in the substrate, a PWELL definition mask etch and P type dopant material introduction sequence forming a PWELL in the substrate, growing an epitaxial layer (EPI) of semiconductor material over the substrate, growing an epitaxial oxide layer (EPIOX) over the EPI layer, depositing by chemical vapor deposition (CVD) a nitride layer CVDSIN over the EPIOX layer, and a CMOS transistor active area definition mask, etch, and field oxide (FOX) grow sequence for framing CMOS transistor active areas of the EPI layer in FOX, an improved CMOS active strip mask, etch, V T adjust and gate oxide grow sequence comprising: forming a photoresist CMOS active strip mask exposing CMOS transistor active areas, etching and removing the CVD nitride layer over the CMOS transistor active areas, and leaving the EPIOX layer; introducing P type dopant material through the EPIOX layer into the CMOS transistor active areas with the photoresist active strip mask in place for adjusting the threshold voltage (V T ) of the CMOS transistors; stripping the EPIOX layer over the CMOS transistor active areas without growing a sacrificial oxide SACOX layer and then removing the photoresist CMOS active strip mask; and growing a gate oxide (GOX) layer over the CMOS transistor active areas using a wet oxide grow process at relatively lower temperature than a dry oxide grow process, said wet oxide grow process being at a temperature no greater than approximately 850° C. followed by anneal ramping of temperature to a relatively high temperature and return to a relatively low temperature in a rapid thermal cycle.

Claim 3

The wafer fabrication process of claim 1 comprising bipolar fabrication steps for fabricating bipolar transistors in the substrate of semiconductor material.

Claim 4

The wafer fabrication process of claim 2 wherein the bipolar fabrication steps include an emitter definition mask, etch and N type dopant introduction sequence followed by an emitter anneal step at relatively high temperature, all subsequent to the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence, and comprising: annealing the GOX layer at said relatively high temperature during the emitter anneal step in a relatively rapid thermal cycle.

Claim 5

The wafer fabrication process of claim 2 wherein the bipolar fabrication steps include a base definition mask, etch and P type dopant introduction sequence implanting the base of bipolar transistors through the nitride layer CVDSIN and EPIOX layer and comprising: forming the combined thickness of the nitride layer CVDSIN and epitaxial oxide layer EPIOX to provide the control screen for controlling the base implant to maintain a desired β specification for bipolar transistors; and forming the layers in a thickness ration CVDSIN/EPIOX in the range of approximately 5/3 or smaller.

Claim 6

The wafer fabrication process of claim 4 comprising forming the CVDSIN layer in the thickness range of 900A-1000A and forming the EPIOX layer in the thickness range of 600A-750A.

Claim 7

The wafer fabrication process of claim 4 wherein the thickness ratio CVDSIN/EPIOX is in the preferred range of 3/2 or smaller.

Claim 8

The wafer fabrication process of claim 4 wherein the CMOS fabrication steps include a polygate definition mask and etch sequence following the CMOS active strip mask, etch, V T adjust and gate oxide grow sequence, comprising: forming a protective nitrox layer over the CVDSIN layer remaining over bipolar transistors during the FOX grow sequence; preserving the protective nitrox layer during the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence; and exposing the protective nitrox layer over the nitride layer CVDSIN during the polygate definition mask and etch sequence for protecting the nitride layer CVDSIN during the poly etch.

Claim 9

The wafer fabrication process of claim 2 wherein the CMOS fabrication steps include a polygate definition mask and etch sequence following the CMOS active strip mask, etch, V T adjust and gate oxide grow sequence, comprising: forming a protective nitrox layer over the CVDSIN layer remaining over bipolar transistors during the FOX grow sequence; preserving the protective nitrox layer during the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence; and exposing the protective nitrox layer over the nitride layer CVDSIN during the polygate definition mask and etch sequence for protecting the nitride layer CVDSIN during a polyetch.

Claim 10

The wafer fabrication process of claim 1 wherein the step of ramping of temperature comprises ramping the temperature to no greater than approximately 950° C. and returning to a relatively low temperature.

Claim 11

A wafer fabrication process comprising CMOS fabrication steps for fabricating CMOS transistors and bipolar fabrication steps for fabricating bipolar transistors in a substrate of semiconductor material including growing an epitaxial layer (EPI) of semiconductor material over the substrate, growing an epitaxial oxide layer (EPIOX) over the EPI layer, depositing by chemical vapor deposition a (CVD) nitride layer CVDSIN over the EPIOX layer, a CMOS transistor active area definition mask, etch, and field oxide (FOX) grow sequence for framing CMOS transistor active areas of the EPI layer in FOX, a base definition mask, etch and P type dopant material introduction sequence forming the base of bipolar transistors through the nitride layer CVDSIN, an improved CMOS active strip mask, etch, V T adjust and gate oxide grow sequence comprising: etching and removing the CVD nitride layer over the CMOS transistor active areas, and leaving the EPIOX layer; introducing dopant material through the EPIOX layer into the CMOS transistor active areas for adjusting the threshold voltage (V T ) of the CMOS transistors; stripping the EPIOX layer over the CMOS transistor active areas without growing a sacrificial oxide SACOX layer; growing a gate oxide (GOX) layer over the CMOS transistor active areas using a wet oxide grow process at relatively lower temperature than a dry oxide grow process; a base definition mask, etch and P type dopant material introduction sequence forming the base of bipolar transistors through the nitride layer CVDSIN; forming the combined thickness of the nitride layer CVDSIN and epitaxial oxide layer EPIOX to provide a control screen for controlling the base implant to maintain a desired β specification for bipolar transistors; and forming the respective layers in a thickness ratio CVDSIN/EPIOX in the range of approximately 5/3 or smaller.

Claim 12

A wafer fabrication process comprising CMOS fabrication steps for fabricating CMOS transistors and bipolar fabrication steps for fabricating bipolar transistors in a substrate of semiconductor material including growing an epitaxial layer (EPI) of semiconductor material over the substrate, growing an epitaxial oxide layer (EPIOX) over the EPI layer, depositing by chemical vapor deposition a (CVD) nitride layer CVDSIN over the EPIOX layer, a CMOS transistor active area definition mask, etch, and field oxide (FOX) grow sequence for framing CMOS transistor active areas of the EPI layer in FOX, a base definition mask, etch and P type dopant material introduction sequence forming the base of bipolar transistors through the nitride layer CVDSIN, an improved CMOS active strip mask, etch, V T adjust and gate oxide grow sequence comprising: etching and removing the CVD nitride layer over the CMOS transistor active areas, and leaving the EPIOX layer; introducing dopant material through the EPIOX layer into the CMOS transistor active areas for adjusting the threshold voltage (V T ) of the CMOS transistors; stripping the EPIOX layer over the CMOS transistor active areas without growing a sacrificial oxide SACOX layer; growing a gate oxide (GOX) layer over the CMOS transistor active areas using a wet oxide grow process at relatively lower temperature than a dry oxide grow process; a base definition mask, etch and P type dopant material introduction sequence forming the base of bipolar transistors through the nitride layer CVDSIN; forming the combined thickness of the nitride layer CVDSIN and epitaxial oxide layer EPIOX to provide a control screen for controlling the base implant to maintain a desired β specification for bipolar transistors; and forming the respective layers in a thickness ratio CVDSIN/EPIOX in the range of approximately 5/3 or smaller.

Claim 13

The wafer fabrication process of claim 10 comprising forming the CVDSIN layer in the thickness range of 900A-1000A and forming the EPIOX layer in the thickness range of 600A-750A.

Claim 14

The wafer fabrication process of claim 10 wherein the thickness ratio CVDSIN/EPIOX is in the preferred range of 3/2 or smaller.

Claim 15

The wafer fabrication process of claim 10 wherein the bipolar fabrication steps include an emitter definition mask, etch and N type dopant introduction sequence followed by an emitter anneal step at relatively high temperature, all subsequent to the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence, and comprising: annealing the GOX layer at said relatively high temperature during the emitter anneal step in a relatively rapid thermal cycle.

Claim 16

The wafer fabrication process of claim 13 comprising growing the GOX layer over the CMOS transistor active areas using a wet oxide grow process at a temperature no greater than approximately 850° C. followed by anneal ramping of temperature to a relatively high temperature and return to a relatively low temperature in a rapid thermal cycle.

Claim 17

A wafer fabrication process comprising BICMOS fabrication steps for fabricating CMOS transistors and bipolar transistors in a substrate of semiconductor material including an NWELL definition mask, etch, and N type dopant material introduction sequence forming an NWELL in the substrate, a PWELL definition mask etch and P type dopant material introduction sequence forming a PWELL in the substrate, growing an epitaxial layer (EPI) of semiconductor material over the substrate, growing an epitaxial oxide layer (EPIOX) over the EPI layer, depositing by chemical vapor deposition a (CVD) nitride layer CVDSIN over the EPIOX layer, a CMOS transistor active area definition mask, etch, field oxide (FOX) grow sequence for framing CMOS transistor active areas of the EPI layer in FOX, CMOS active strip mask, etch, V T adjust and gate oxide grow sequence, a polygate definition mask and etch sequence, a base definition mask, etch and P type dopant introduction sequence implanting the base of bipolar transistors through the nitride layer CVDSIN and EPIOX layer, and an emitter definition mask, etch and N type dopant introduction sequence followed by an emitter anneal step at relatively high temperature, subsequent to the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence, the improved steps for reducing stress defects in the EPI layer comprising: forming the combined thickness of the nitride layer CVDSIN and epitaxial oxide layer EPIOX to provide a control screen for controlling the base implant to maintain a desired β specification for bipolar transistors; forming the respective layers in a thickness ratio CVDSIN/EPIOX in the range of approximately 5/3 or smaller; forming a protective nitrox layer over the CVDSIN layer during the FOX grow sequence; preserving the protective nitrox layer during the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence; and exposing the protective nitrox layer over the nitride layer CVDSIN during the polygate definition mask and etch sequence for protecting the nitride layer CVDSIN during a poly etch.

Claim 18

A wafer fabrication process comprising BICMOS fabrication steps for fabricating CMOS transistors and bipolar transistors in a substrate of semiconductor material including an NWELL definition mask, etch, and N type dopant material introduction sequence forming an NWELL in the substrate, a PWELL definition mask etch and P type dopant material introduction sequence forming a PWELL in the substrate, growing an epitaxial layer (EPI) of semiconductor material over the substrate, growing an epitaxial oxide layer (EPIOX) over the EPI layer, depositing by chemical vapor deposition a (CVD) nitride layer CVDSIN over the EPIOX layer, a CMOS transistor active area definition mask, etch, field oxide (FOX) grow sequence for framing CMOS transistor active areas of the EPI layer in FOX, CMOS active strip mask, etch, V T adjust and gate oxide grow sequence, a polygate definition mask and etch sequence, a base definition mask, etch and P type dopant introduction sequence implanting the base of bipolar transistors through the nitride layer CVDSIN and EPIOX layer, and an emitter definition mask, etch and N type dopant introduction sequence followed by an emitter anneal step at relatively high temperature, subsequent to the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence, the improved steps for reducing stress defects in the EPI layer comprising: forming the combined thickness of the nitride layer CVDSIN and epitaxial oxide layer EPIOX to provide a control screen for controlling the base implant to maintain a desired β specification for bipolar transistors; forming the respective layers in a thickness ratio CVDSIN/EPIOX in the range of approximately 5/3 or smaller; forming a protective nitrox layer over the CVDSIN layer during the FOX grow sequence; preserving the protective nitrox layer during the CMOS active strip mask, etch, V T adjust, and gate oxide grow sequence; and exposing the protective nitrox layer over the nitride layer CVDSIN during the polygate definition mask and etch sequence for protecting the nitride layer CVDSIN during a poly etch.

Claim 19

The wafer fabrication process of claim 15 comprising forming the CVDSIN layer in the thickness range of 900A-1000A and forming the EPIOX layer in the thickness range of 600A-750A.

Claim 20

The wafer fabrication process of claim 15 wherein the thickness ratio CVDSIN/EPIOX is in the preferred range of 3/2 or smaller.

Claim 21

The wafer fabrication process of claim 15 comprising: forming a photoresist CMOS active strip mask exposing CMOS transistor active areas, etching and removing the CVD nitride layer over the CMOS transistor active areas, and leaving the EPIOX layer; introducing P type dopant material through the EPIOX layer into the CMOS transistor active areas with the photoresist active strip mask in place for adjusting the threshold voltage (V T ) of the CMOS transistors; stripping the EPIOX layer over the CMOS transistor active areas without growing a sacrificial oxide SACOX layer and then removing the photoresist CMOS active strip mask; and growing a gate oxide (GOX) layer over the CMOS transistor active areas using a wet oxide grow process at relatively lower temperature than a dry oxide grow process.

Claim 22

The wafer fabrication process of claim 18 comprising growing the GOX layer over the CMOS transistor active areas using a wet oxide grow process at a temperature no greater than approximately 850° C. followed by anneal ramping of temperature to a relatively high temperature and return to a relatively low temperature in a rapid thermal cycle.

Claim 23

The wafer fabrication process of claim 19 wherein the step of ramping of temperature comprises ramping the temperature to no greater than approximately 950° C. and returning to a relatively low temperature.

Claim 24

The wafer fabrication process of claim 18 comprising the step of annealing the GOX layer at said relatively high emitter anneal temperature during the emitter anneal step in a relatively rapid thermal cycle.