← Back to Patent Explorer
US5289484A Expired / Lapsed US ⏱️ 0.0 years remaining

Laser diode

Assignee: Eastman Kodak Co
•
Filing: 1992-08-03
•
Granted: 1994-02-22
•
Expires: 2012-08-03
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A high efficiency laser diode that has a narrow beam divergence in a direction perpendicular with respect to the substrate, and a low threshold current.

Inventors

  • 👤 Toshiro Hayakawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 07:42
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S2301/00; H01S2301/18; H01S5/20; H01S5/2004; H01S5/32; H01S5/3211; H01S5/3421; H01S5/34313; H01S5/3432

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 168 words
An optical waveguiding multilayer structure laser diode having a quantum well active layer and bounded by a resonator structure perpendicular thereto, comprising: (a) an optical waveguiding region adjacent to the active layer having at least one high refractive index layer; (b) two spaced cladding regions that sandwich between them the optical waveguiding region and the active layer, each cladding region including: a first cladding layer adjacent to the waveguiding region and having a lower refractive index than the waveguiding region; a first low refractive index layer having a refractive index lower than the first cladding layer; a second cladding layer adjacent to the first low refractive index layer and a second low refractive index layer adjacent to the second cladding layer and having a refractive index lower than the first low refractive index layer; and (c) a low refractive index electrode layered structure connected to each cladding region, with each layer of the electrode structure having a lower index of refraction than any of the cladding region layers.
Claim 2
Dependent Claim 168 words
An optical waveguiding multilayer structure laser diode having a quantum well active layer and bounded by a resonator structure perpendicular thereto, comprising: (a) an optical waveguiding region adjacent to the active layer having at least one high refractive index layer; (b) two spaced cladding regions that sandwich between them the optical waveguiding region and the active layer, each cladding region including: a first cladding layer adjacent to the waveguiding region and having a lower refractive index than the waveguiding region; a first low refractive index layer having a refractive index lower than the first cladding layer; a second cladding layer adjacent to the first low refractive index layer and a second low refractive index layer adjacent to the second cladding layer and having a refractive index lower than the first low refractive index layer; and (c) a low refractive index electrode layered structure connected to each cladding region, with each layer of the electrode structure having a lower index of refraction than any of the cladding region layers.
Claim 3
Dependent Claim 29 words
The laser diode of claim 1 wherein the optical waveguiding region includes two high refractive index layers which sandwich between them a higher refractive index quantum well active layer.

References Cited (Backward Citations)

US4585491A Cited
JPS61156788A Cited
JPS61239689A Cited
US4745612A Cited
US4862470A Cited
JPH0376288A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-21 1997-08-23 1998-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-21 2001-08-23 2002-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-21 2005-08-23 2006-02-22 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag