Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
271 words
A comparator for comparing, in response to an activation signal, voltages of first and second signals in complement with voltages of third and fourth signals in complement, comprising: a first bipolar transistor for receiving said third signal to a base thereof; a second bipolar transistor for receiving said fourth signal to a base thereof; a first FET for receiving said second signal to a gate thereof, said first bipolar transistor and said first FET being connected in series to form a first current path; a second FET for receiving said first signal to a gate thereof, said second bipolar transistor and said second FET being connected in series to form a second current path, said first current path and said second current path connected in parallel; a switching FET having a drain connected to emitters is of said first and second bipolar transistors and a source connected to ground, and being turned on during when said activation signal is in a first state; a load resistor means connected to a junction of drains of said first and second FETS; and a precharge means for precharging collectors of said first and second bipolar transistors during when said activation signal is in a second state; whereby when said first and third signals are in the same state and, at the same time, the second and fourth signals are in the same state, said junction produces a first level signal, and when said first and third signals are in the opposite state and, at the same time, the second and fourth signals are in the opposite state, said junction produces a second level signal.
Claim 2
Dependent Claim
271 words
A comparator for comparing, in response to an activation signal, voltages of first and second signals in complement with voltages of third and fourth signals in complement, comprising: a first bipolar transistor for receiving said third signal to a base thereof; a second bipolar transistor for receiving said fourth signal to a base thereof; a first FET for receiving said second signal to a gate thereof, said first bipolar transistor and said first FET being connected in series to form a first current path; a second FET for receiving said first signal to a gate thereof, said second bipolar transistor and said second FET being connected in series to form a second current path, said first current path and said second current path connected in parallel; a switching FET having a drain connected to emitters is of said first and second bipolar transistors and a source connected to ground, and being turned on during when said activation signal is in a first state; a load resistor means connected to a junction of drains of said first and second FETS; and a precharge means for precharging collectors of said first and second bipolar transistors during when said activation signal is in a second state; whereby when said first and third signals are in the same state and, at the same time, the second and fourth signals are in the same state, said junction produces a first level signal, and when said first and third signals are in the opposite state and, at the same time, the second and fourth signals are in the opposite state, said junction produces a second level signal.
Claim 3
Dependent Claim
16 words
A comparator as claimed in claim 1, wherein said first and second FETS are N-channel MOSFETs.
Claim 4
Dependent Claim
16 words
A comparator as claimed in claim 1, wherein said first and second PZTB are P-channel MOSFETs.
Claim 5
Dependent Claim
72 words
A comparator as claimed in claim 1, further comprising: a third FET for receiving said third signal to a gate thereof, said third FET having drain and source, respectively, connected to collector and said base of said first bipolar transistor; and a fourth FET for receiving said fourth signal to a gate thereof, said fourth FET having drain and source, respectively, connected to collector and said base of said second bipolar transistor.
Claim 6
Dependent Claim
16 words
A comparator as claimed in claim 4, wherein said third and fourth FETs are N-channel MOSFETs.
Claim 7
Dependent Claim
16 words
A comparator as claimed in claim 4, wherein said third and fourth FETs are P-channel MOSFETs.
Claim 8
Dependent Claim
43 words
A comparator as claimed in claim 1, wherein said first and second signals are signals of a bit line pair from a first memory cell, and said third and fourth signals are signals of a bit line pair from a second memory cell.