Process of fabricating an insulated-gate field effect transistor

Claim 2

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a polycrystalline silicon layer on a gate insulating film covering one main surface of a semiconductor substrate of a first conductivity; selectively removing said polycrystalline silicon layer to form a silicon gate electrode having a plurality of holes and a plurality of silicon islands each located in an associated one of said holes; selectively introducing an impurity of a second conductivity type opposite to said first conductivity type into said semiconductor substrate by using said silicon gate electrode and said silicon islands as a mask to thereby form a plurality of base regions of said second conductivity type in said semiconductor substrate; forming a mask layer on said silicon gate electrode; selectively introducing an impurity of said first conductivity type into each of said base regions, using said silicon gate electrode an said silicon islands as a mask, and preventing said second impurity from being introduced into said silicon gate electrode via said mask layer to thereby form a plurality of source regions of said first conductivity type in said base regions, respectively, each of said source regions having a ring shape; removing each of said silicon islands and said mask layer; forming a source electrode in contact with respective parts of said base regions and said source regions; and forming a drain electrode on an opposite main surface of said semiconductor substrate.

Claim 3

A process of fabricating an insulated-gate field effect transistor according to claim 17, wherein said impurity of said second conductivity type is introduced by ion implantation into said semiconductor substrate and then diffused by the first thermal treatment, and said impurity of said first conductivity type is introduced by ion implantation into each of said base regions and then diffused by the second thermal treatment.

Claim 4

A process of fabricating an insulated-gate field effect transistor according to claim 2 wherein said mask layer is a photoresist layer and removed before said second thermal treatment.

Claim 5

A process of fabricating an insulated-gate field effect transistor according to claim 1 wherein said first conductivity type is p-type, said second conductivity type is n-type, and said transistor is p-type.

Claim 6

A process of fabricating an insulated-gate field effect transistor according to claim 3 wherein the dose of said p-type impurity by way of ion implantation is within the range of from 1×10 15 to 1×10 16 /cm 2 and the dose of said n-type impurity by way of ion implantation is within the range of from 1×10 13 to 1×10 14 /cm 2 .

Claim 7

A process of fabricating an insulated-gate field effect transistor according to claim 3 wherein said p-type impurity is boron, and said n-type impurity is phosphorus.

Claim 8

A process of fabricating an insulated-gate field effect transistor according to claim 17 wherein said semiconductor substrate is constructed of a silicon base of said first conductivity type and a silicon epitaxial layer of said first conductivity type over said silicon base, said silicon base being higher in impurity concentration than said silicon epitaxial layer; and said one main surface of said semiconductor substrate is the upper surface of said silicon epitaxial layer and said opposite main surface of said semiconductor substrate is the undersurface of said silicon base.

Claim 9

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a silicon gate electrode on a gate insulating film deposited over one surface of a semiconductor substrate of a first conductivity type; forming base regions of a second conductivity type opposite to said first conductivity type, extending beneath said silicon gate electrode by introducing an impurity of said second conductivity type into specified areas of said surface of said semiconductor substrate using said a silicon gate electrode as a mask, and then diffusing said introduced impurity; forming a mask layer on said silicon gate electrode; forming source regions of said first conductivity type in said base regions by introducing an impurity of said first conductivity type, with said silicon gate electrode masked with said mask layer, into said specified areas of said surface of said semiconductor substrate, and then diffusing said introduced impurity, thereby portions in said base regions, extending beneath said silicon gate electrode being defined as channel regions; and forming a drain electrode on the other surface of said semiconductor substrate; wherein the window pattern of said mask layer is formed to be smaller than the window pattern of said silicon gate electrode by 1 to 2 μm between the corresponding respective edges of both window patterns.

Claim 10

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a silicon gate electrode on a gate insulating film deposited over one surface of a semiconductor substrate of a first conductivity type; forming base regions of a second conductivity type opposite to said first conductivity type, extending beneath said silicon gate electrode by introducing an impurity of said second conductivity type into specified areas of said surface of said semiconductor substrate using said a silicon gate electrode as a mask, and then diffusing said introduced impurity; forming a mask layer on said silicon gate electrode; forming source regions of said first conductivity type in said base regions by introducing an impurity of said first conductivity type, with said silicon gate electrode masked with said mask layer, into said specified areas of said surface of said semiconductor substrate, and then diffusing said introduced impurity, thereby portions in said base regions, extending beneath said silicon gate electrode being defined as channel regions; and forming a drain electrode on the other surface of said semiconductor substrate; wherein the window pattern of said mask layer is formed to be smaller than the window pattern of said silicon gate electrode by 1 to 2 μm between the corresponding respective edges of both window patterns.

Claim 11

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a gate insulating film on one main surface of a semiconductor substrate of a first conductivity type having a plurality of impurity regions of a second conductivity type selectively formed therein; forming a polycrystalline silicon layer on said gate insulating film; selectively removing said polycrystalline silicon layer to form a silicon gate electrode having a plurality of holes and a plurality of silicon islands located in an associated one of said holes, each of said silicon islands being formed on a part of said gate insulating film covering an associated one of said impurity regions; introducing an impurity of said second conductivity type into said semiconductor substrate by ion implantation of said impurity of said second conductivity type with using said silicon gate electrode and said silicon islands as a mask; performing activation treatment to make said impurity of said second conductivity type diffuse laterally and reach an associated one of said impurity regions to thereby form a plurality of base regions in said semiconductor substrate; forming a mask layer on said silicon gate electrode; introducing an impurity of a said first conductivity type into each of said base regions by ion implantation of said impurity of said first conductivity type with using said mask layer and said silicon islands as a mask, said impurity of said first conductivity type being prevented from being introduced into said gate electrode by said mask layer; performing activation treatment to activate said impurity of said first conductivity type to thereby form a plurality of source regions in said base region, respectively, each of said source regions having a ring shape; removing said mask layer and each of said silicon islands; forming a source electrode in contact with respective parts of said base regions and said source regions; and forming a drain electrode on an opposite main surface of said semiconductor substrate.

Claim 12

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a gate insulating film on one main surface of a semiconductor substrate of a first conductivity type having a plurality of impurity regions of a second conductivity type selectively formed therein; forming a polycrystalline silicon layer on said gate insulating film; selectively removing said polycrystalline silicon layer to form a silicon gate electrode having a plurality of holes and a plurality of silicon islands located in an associated one of said holes, each of said silicon islands being formed on a part of said gate insulating film covering an associated one of said impurity regions; introducing an impurity of said second conductivity type into said semiconductor substrate by ion implantation of said impurity of said second conductivity type with using said silicon gate electrode and said silicon islands as a mask; performing activation treatment to make said impurity of said second conductivity type diffuse laterally and reach an associated one of said impurity regions to thereby form a plurality of base regions in said semiconductor substrate; forming a mask layer on said silicon gate electrode; introducing an impurity of a said first conductivity type into each of said base regions by ion implantation of said impurity of said first conductivity type with using said mask layer and said silicon islands as a mask, said impurity of said first conductivity type being prevented from being introduced into said gate electrode by said mask layer; performing activation treatment to activate said impurity of said first conductivity type to thereby form a plurality of source regions in said base region, respectively, each of said source regions having a ring shape; removing said mask layer and each of said silicon islands; forming a source electrode in contact with respective parts of said base regions and said source regions; and forming a drain electrode on an opposite main surface of said semiconductor substrate.

Claim 13

A process of fabricating an insulated-gate field effect transistor according to claim 9 wherein activation treatment of said impurity of said second conductivity type is the first thermal treatment, and activation treatment of said impurity of said first conductivity type is the second thermal treatment.

Claim 14

A process of fabricating an insulated-gate field effect transistor according to claim 9 wherein said first conductivity type is p-type, said second conductivity type is n-type, and said transistor is of p-type.

Claim 15

A process of fabricating an insulated-gate field effect transistor according to claim 11 wherein the dose of said p-type impurity introduced as within the range of from 1×10 15 to 1×10 16 /cm 2 and the dose of said n-type impurity introduced is within the range of from 1×10 13 to 1×10 14 /cm 2 .

Claim 16

A process of fabricating an insulated-gate field effect transistor according to claim 11 wherein said p-type impurity is boron, and said n-type impurity is phosphorus.

Claim 17

A process of fabricating an insulated-gate field effect transistor according to claim 9 wherein said semiconductor substrate consists of a silicon base of said first conductivity type and a silicon epitaxial layer of said first conductivity type grown over the uppersurface of said silicon base, said silicon base being higher in impurity concentration than said silicon epitaxial layer; and said one main surface of said semiconductor substrate is the uppersurface of said silicon epitaxial layer and said opposite main surface of said semiconductor substrate is the undersurface of said silicon base.

Claim 18

A process of fabricating an insulated-gate field effect transistor according to claim 9 wherein said mask layer is a photoresist layer.

Claim 19

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a polycrystalline silicon film on a gate insulating film deposited over a semiconductor substrate of a first conductivity type; shaping a grid-like silicon gate electrode by patterning said polycrystalline silicon film; introducing an impurity of a second conductivity type opposite to said first conductivity type by ion implantation of said impurity of said second conductivity type into a specified areas of said surface of said semiconductor substrate and said silicon gate electrode using said silicon gate electrode as a mask; forming base regions of said second conductivity type extending beneath said silicon gate electrode by subjecting said impurity of said second conductivity type introduced in said semiconductor substrate by ion implantation to activation treatment to be laterally diffused; forming a mask layer on said silicon gate electrode; introducing an impurity of said first conductivity type, with said silicon gate electrode masked with said mask layer, into said specified areas of said surface of said semiconductor substrate by ion implantation; removing said mask layer; forming source regions of said first conductivity type in said base regions by subjecting said impurity of said first conductivity type injected by ion implantation to activation treatment, thereby surface portions of said base regions beneath said silicon gate electrode being defined as channel regions; forming a source electrode connecting to said source regions on the side of said one surface of said semiconductor substrate; and forming a drain electrode on the other surface of said semiconductor substrate; wherein the window pattern of said mask layer is formed to be smaller than the window pattern of said silicon gate electrode by 1 μm to 2 μm between the corresponding respective edges of both window patterns.

Claim 20

A process of fabricating an insulated-gate field effect transistor comprising the steps of: forming a polycrystalline silicon film on a gate insulating film deposited over a semiconductor substrate of a first conductivity type; shaping a grid-like silicon gate electrode by patterning said polycrystalline silicon film; introducing an impurity of a second conductivity type opposite to said first conductivity type by ion implantation of said impurity of said second conductivity type into a specified areas of said surface of said semiconductor substrate and said silicon gate electrode using said silicon gate electrode as a mask; forming base regions of said second conductivity type extending beneath said silicon gate electrode by subjecting said impurity of said second conductivity type introduced in said semiconductor substrate by ion implantation to activation treatment to be laterally diffused; forming a mask layer on said silicon gate electrode; introducing an impurity of said first conductivity type, with said silicon gate electrode masked with said mask layer, into said specified areas of said surface of said semiconductor substrate by ion implantation; removing said mask layer; forming source regions of said first conductivity type in said base regions by subjecting said impurity of said first conductivity type injected by ion implantation to activation treatment, thereby surface portions of said base regions beneath said silicon gate electrode being defined as channel regions; forming a source electrode connecting to said source regions on the side of said one surface of said semiconductor substrate; and forming a drain electrode on the other surface of said semiconductor substrate; wherein the window pattern of said mask layer is formed to be smaller than the window pattern of said silicon gate electrode by 1 μm to 2 μm between the corresponding respective edges of both window patterns.