Patent US5288327A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5288327A Expired / Lapsed US ⏱️ 0.0 years remaining

Deflected flow in chemical vapor deposition cell

Assignee: STANFORD UNIVERSITY OTL LLC
•
Filing: 1993-08-18
•
Granted: 1994-02-22
•
Expires: 2013-08-18
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A reactor cell for use in organo-metallic chemical vapor deposition (OMCVD). Multiple precursor gases are combined in a supply tube (14). A deflector section (56) connected to the supply tube consists of three tubes (58, 60, 61) joined at right angles to each other and to the supply tube in order to maximize the turbulence in the gas flow and to thereby uniformly mix the gas. The last of the three tubes is perpendicularly joined to a tapered section (30) of rectangular cross-section that tapers outwardly toward a deposition chamber (22) of rectangular cross section containing a heated susceptor (18) holding the wafer (20) over which the uniformly mixed gas flows and cracks, thereby epitaxially depositing some of its constituents on the wafer.

Inventors

  • 👤 Rajaram Bhat

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 03:06
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 156 words
In a reactor cell for use in a chemical vapor deposition system and having a deposition chamber for holding a substrate for chemical vapor deposition thereupon from a gas flowing through said chamber substantially along a gas flow axis extending along a median of said deposition chamber while said substrate is held within said chamber with a normal of its principal face being inclined to said axis at a substantially non-zero angle and an input port for supplying said gas, the improvement comprising means interposed between said input port and said deposition chamber for uniformly mixing the gas composition whereby the gas flows through the deposition chamber uniformly across its cross section, said means comprising a deflection section having a plurality of right angle corners through which said gas flows between said input port and said deposition chamber so that the gas is injected into the deposition chamber perpendicular to and onto said gas flow axis.
Claim 2
Dependent Claim 156 words
In a reactor cell for use in a chemical vapor deposition system and having a deposition chamber for holding a substrate for chemical vapor deposition thereupon from a gas flowing through said chamber substantially along a gas flow axis extending along a median of said deposition chamber while said substrate is held within said chamber with a normal of its principal face being inclined to said axis at a substantially non-zero angle and an input port for supplying said gas, the improvement comprising means interposed between said input port and said deposition chamber for uniformly mixing the gas composition whereby the gas flows through the deposition chamber uniformly across its cross section, said means comprising a deflection section having a plurality of right angle corners through which said gas flows between said input port and said deposition chamber so that the gas is injected into the deposition chamber perpendicular to and onto said gas flow axis.
Claim 3
Dependent Claim 32 words
In a reactor cell, the improvement recited in claim 1 wherein said deflection section has four right angle corners through which said gas flows between said input port and said deposition chamber.
Claim 4
Dependent Claim 26 words
In a reactor cell, the improvement as recited in claim 2, further comprising a taper section outwardly tapering from said deflection section to said deposition chamber.
Claim 5
Dependent Claim 36 words
In a reactor cell, the improvement as recited in claim 3, wherein said taper section has a substantially rectangular cross-section outwardly tapering in a first direction and of substantially constant dimension in a perpendicular second direction.

References Cited (Backward Citations)

US3717439A Cited
DE2908851A1 Cited
JPS5748226A Cited
JPS61136682A Cited
US4649859A Cited
US4897149A Cited
US5000113A Cited
DE3715644A1 Cited
US5045496A Cited
JPH0230119A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-02-21 1997-08-23 1998-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-02-21 2001-08-23 2002-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-02-21 2005-08-23 2006-02-22 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag