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US5286994A
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Semiconductor memory trap film assembly having plural laminated gate insulating films
Assignee: Rohm Co Ltd
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Filing: 1992-06-23
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Granted: 1994-02-15
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Expires: 2012-06-23
Abstract
Abstract A trap film assembly of a semiconductor memory device includes a tunnel oxide layer formed on a semiconductor substrate and plural multi-layer film layers laminated on the tunnel oxide film. A thickness of each multi-layer film layer is sequentially increased in a direction away from the semiconductor substrate and towards a gate electrode, thereby displacing the charge centroid of the assembly towards the semiconductor substrate.
Inventors
- 👤 Takanori Ozawa
- 👤 Noriyuki Shimoji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:48
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D30/00; H10D30/60; H10D30/69; H10D64/693; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
179 words
A semiconductor non-volatile memory comprising: a semiconductor substrate having diffusion regions defining a channel region therebetween; a gate electrode; and, a trap film assembly interposed between said channel region of said semiconductor substrate and said gate electrode, said trap film assembly for trapping charges to maintain a memory state of the semiconductor non-volatile memory and including a tunnel oxide film located on said semiconductor substrate along said channel region, plural stacked multilayer insulating film layers successively located between said tunnel oxide film and said gate electrode, each multilayer film layer including at least two layers of respectively different insulating films, wherein a vertical thickness in a direction between said channel region and said gate electrode of each respective multilayer film layer is successively increased from a first one of said plural multilayer film layers located adjacent said tunnel oxide film to a last one of said plural multilayer film layers located adjacent said gate electrode, and wherein a electric charge centroid of said trap film assembly is located relatively closer to said semiconductor substrate than to said gate electrode.
Claim 2
Dependent Claim
179 words
A semiconductor non-volatile memory comprising: a semiconductor substrate having diffusion regions defining a channel region therebetween; a gate electrode; and, a trap film assembly interposed between said channel region of said semiconductor substrate and said gate electrode, said trap film assembly for trapping charges to maintain a memory state of the semiconductor non-volatile memory and including a tunnel oxide film located on said semiconductor substrate along said channel region, plural stacked multilayer insulating film layers successively located between said tunnel oxide film and said gate electrode, each multilayer film layer including at least two layers of respectively different insulating films, wherein a vertical thickness in a direction between said channel region and said gate electrode of each respective multilayer film layer is successively increased from a first one of said plural multilayer film layers located adjacent said tunnel oxide film to a last one of said plural multilayer film layers located adjacent said gate electrode, and wherein a electric charge centroid of said trap film assembly is located relatively closer to said semiconductor substrate than to said gate electrode.
Claim 3
Dependent Claim
46 words
A semiconductor non-volatile memory as claimed in claim 1, wherein a vertical thickness of at least one of said at least two layers of respectively different insulating films is successively increased in each of said multilayer film layers in a direction away from said semiconductor substrate.
Claim 4
Dependent Claim
143 words
A trap film assembly of a semiconductor non-volatile memory for trapping charges to maintain a memory state of said semiconductor non-volatile memory, comprising: a tunnel oxide film located on a semiconductor substrate; plural stacked multilayer insulating film layers successively located between said tunnel oxide film and an electrode of the semiconductor non-volatile memory, each multilayer film layer including at least two layers of respectively different insulating films, wherein a vertical thickness in a direction between the semiconductor substrate and the electrode of each respective multilayer film layer is successively increased from a first one of said plural multilayer film layers located adjacent said tunnel oxide film to a last one of said plural multilayer film layers located adjacent the electrode, and wherein a electric charge centroid of said trap film assembly is located relatively closer to the semiconductor substrate than to the electrode.
Claim 5
Dependent Claim
143 words
A trap film assembly of a semiconductor non-volatile memory for trapping charges to maintain a memory state of said semiconductor non-volatile memory, comprising: a tunnel oxide film located on a semiconductor substrate; plural stacked multilayer insulating film layers successively located between said tunnel oxide film and an electrode of the semiconductor non-volatile memory, each multilayer film layer including at least two layers of respectively different insulating films, wherein a vertical thickness in a direction between the semiconductor substrate and the electrode of each respective multilayer film layer is successively increased from a first one of said plural multilayer film layers located adjacent said tunnel oxide film to a last one of said plural multilayer film layers located adjacent the electrode, and wherein a electric charge centroid of said trap film assembly is located relatively closer to the semiconductor substrate than to the electrode.
Claim 6
Dependent Claim
45 words
A trap assembly as claimed in claim 3, wherein a vertical thickness of at least one of said at least two layers of respectively different insulating films is successively increased in each of said multilayer film layers in a direction away from said semiconductor substrate.
References Cited (Backward Citations)
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