Patent US4620766A successfully refreshed from Google Patents.
Patent US5283461A successfully refreshed from Google Patents.
US5283461A
Expired / Lapsed
US
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Trench conductor and crossunder architecture
Assignee: Intersil Corp
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Filing: 1992-07-17
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Granted: 1994-02-01
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Expires: 2012-07-17
Abstract
Abstract The trench pattern of a dielectrically isolated island architecture is filled with doped polysilicon and used as an interconnect structure for circuit devices that are supported within the islands, thereby decreasing the amount of topside interconnect and reducing the potential for parasitics beneath tracks of surface metal. The trench pattern may serve as a voltage distribution network or provide crossunders beneath surface tracks. In addition, at least one of the islands may contain one or more auxiliary poly-filled trench regions to perform the crossunder function. Such an auxiliary trench region may be also provided in an island that contains a circuit device. Manufacture of the conductor-filled trench structure may be facilitated by depositing polysilicon over a dielectrically coated trench grid structure and then planarizing the polysilicon to the surface of the oxide dielectric. The exposed polysilicon is doped and then oxidized to seal the dopant, which forms a thin oxide layer on the poly. The oxide dielectric for the trench can then be selectively patterned to form a mask to be for the initial doping of the islands.
Inventors
- 👤 James D. Beasom
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/43; H10W20/432; H10W20/20; H10W20/44; H10W20/4451; H10W72/00; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/15
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
147 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; electrically conductive material formed in said trench pattern and said auxiliary trench region; a first conductive layer overlying dielectric material atop the surface of said auxiliary trench region between first and second locations of electrically conductive material in said auxiliary trench region; and respective electrical connections between second and third conductive layers overlying said dielectric material and said first and second locations of electrically conductive material in said auxiliary trench region.
Claim 2
Dependent Claim
147 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; electrically conductive material formed in said trench pattern and said auxiliary trench region; a first conductive layer overlying dielectric material atop the surface of said auxiliary trench region between first and second locations of electrically conductive material in said auxiliary trench region; and respective electrical connections between second and third conductive layers overlying said dielectric material and said first and second locations of electrically conductive material in said auxiliary trench region.
Claim 3
Dependent Claim
19 words
A semiconductor structure according to claim 1, wherein said auxiliary trench region is formed in an electrically isolated island.
Claim 4
Dependent Claim
29 words
A semiconductor structure according to claim 2, further including at least one semiconductor device region formed in the electrically isolated island in which said auxiliary trench region is formed.
Claim 5
Dependent Claim
24 words
A semiconductor structure according to claim 1, wherein a plurality of auxiliary trench regions are formed in said selected portion of said semiconductor layer.
Claim 6
Dependent Claim
129 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; and electrically conductive material formed in said trench pattern and said auxiliary trench region; and wherein said trench pattern and said auxiliary trench region are formed in a semiconductor layer that is dielectrically isolated from an underlying substrate, so that said semiconductor layer is subdivided into a plurality of spaced-apart, dielectrically isolated islands.
Claim 7
Dependent Claim
129 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; and electrically conductive material formed in said trench pattern and said auxiliary trench region; and wherein said trench pattern and said auxiliary trench region are formed in a semiconductor layer that is dielectrically isolated from an underlying substrate, so that said semiconductor layer is subdivided into a plurality of spaced-apart, dielectrically isolated islands.
Claim 8
Dependent Claim
105 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; and electrically conductive material formed in said trench pattern and said auxiliary trench region; and wherein a plurality of auxiliary trench regions are formed in an electrically isolated island.
Claim 9
Dependent Claim
105 words
A semiconductor structure comprising: a trench pattern formed in a semiconductor layer that is electrically isolated from an underlying substrate, said trench pattern subdividing said semiconductor layer into a plurality of spaced-apart, electrically isolated islands; an auxiliary trench region formed in a selected portion of said semiconductor layer spaced apart from said trench pattern; dielectric material formed on top surfaces of said semiconductor layer, and upon sidewalls of said trench pattern and said auxiliary trench region; and electrically conductive material formed in said trench pattern and said auxiliary trench region; and wherein a plurality of auxiliary trench regions are formed in an electrically isolated island.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-31 | 1997-08-02 | 1998-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-31 | 2001-08-02 | 2002-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-31 | 2005-08-02 | 2006-02-01 | $7700.00 | Window Closed / Lapsed |