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US5283205A
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Method for manufacturing a semiconductor device on a substrate having an anisotropic expansion/contraction characteristic
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-03-17
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Granted: 1994-02-01
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Expires: 2012-03-17
Abstract
Abstract A method for manufacturing a semiconductor device which allows to form a semiconductor device on an insulating amorphous material or an insulating crystallized glass in high precision alignment is provided. The present invention is characterized in that alignment markers of masks are formed along a direction in which a degree of expansion-contraction of a substrate is smaller when the semiconductor device is fabricated by laminating thin films having patterns on the substrate.
Inventors
- 👤 Naoya Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:31
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70; G03F9/7073; G03F9/7084; H; H10; H10W; H10W46/00; H10W46/101; H10W46/501; Y; Y10; Y10S; Y10S148/00; Y10S148/102; Y10S438/00; Y10S438/942; Y10S438/975
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
117 words
A method for manufacturing a semiconductor device having at least one patterned thin film on a substrate comprising the steps of: forming a film of material on said substrate, said substrate having an anisotropy in degree of expansion and contraction; aligning a mask having a mask pattern with said substrate by using alignment markers provided on said substrate; and patterning said film of material by photolithography in accordance with said mask pattern, wherein said alignment markers are arranged on said substrate in a first direction in which said degree of expansion and contraction of said substrate is smaller than the degree of expansion and contraction of the substrate in a second direction different from said first direction.
Claim 2
Independent Claim
117 words
A method for manufacturing a semiconductor device having at least one patterned thin film on a substrate comprising the steps of: forming a film of material on said substrate, said substrate having an anisotropy in degree of expansion and contraction; aligning a mask having a mask pattern with said substrate by using alignment markers provided on said substrate; and patterning said film of material by photolithography in accordance with said mask pattern, wherein said alignment markers are arranged on said substrate in a first direction in which said degree of expansion and contraction of said substrate is smaller than the degree of expansion and contraction of the substrate in a second direction different from said first direction.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein said substrate comprises an insulating amorphous or crystalline material.
Claim 4
Dependent Claim
13 words
The method of claim 2 wherein said substrate is a crystalline glass substrate.
Claim 5
Dependent Claim
12 words
The method of claim 2 wherein said substrate is a quartz substrate.
Claim 6
Dependent Claim
15 words
The method of claim 1 wherein said semiconductor device is a thin film semiconductor device.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein said substrate has the anisotropy in expansion and contraction in vertical and horizontal directions by 2 to 15 times.
Claim 8
Independent Claim
140 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first layer of material on a substrate having anisotropy in degree of expansion and contraction; patterning said first layer onto a first patterned layer, wherein first alignment markers are formed on said substrate in a first direction in which said degree is smaller than the degree of expansion and contraction of the substrate in a second direction different from said first direction; forming a second layer of material on said substrate with said first patterned layer of material formed thereon; aligning a mask having a mask pattern and second alignment markers therein with said substrate with said second layer of material formed thereon by adjusting said second alignment markers to said first alignment markers; and patterning said second layer of material in accordance with said mask pattern.
Claim 9
Independent Claim
140 words
A method for manufacturing a semiconductor device comprising the steps of: forming a first layer of material on a substrate having anisotropy in degree of expansion and contraction; patterning said first layer onto a first patterned layer, wherein first alignment markers are formed on said substrate in a first direction in which said degree is smaller than the degree of expansion and contraction of the substrate in a second direction different from said first direction; forming a second layer of material on said substrate with said first patterned layer of material formed thereon; aligning a mask having a mask pattern and second alignment markers therein with said substrate with said second layer of material formed thereon by adjusting said second alignment markers to said first alignment markers; and patterning said second layer of material in accordance with said mask pattern.
Claim 10
Dependent Claim
15 words
The method of claim 7 wherein said substrate comprises an insulating amorphous or crystalline material.
Claim 11
Dependent Claim
13 words
The method of claim 8 wherein said substrate is a crystalline glass substrate.
Claim 12
Dependent Claim
12 words
The method of claim 8 wherein said substrate is a quartz substrate.
Claim 13
Dependent Claim
15 words
The method of claim 7 wherein said semiconductor device is a thin film semiconductor device.
Claim 14
Dependent Claim
30 words
The method of claim 7 further comprising the step of heating said substrate between the step of forming said first patterned film and the step of forming the second layer.
Claim 15
Dependent Claim
21 words
The method of claim 12 wherein said heating step is done at a temperature at which said substrate expands or contracts.
Claim 16
Dependent Claim
25 words
The method of claim 7 wherein said substrate has the anisotropy in expansion and contraction in vertical and horizontal directions by 2 to 15 times.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1997-01-31 | 1997-08-02 | 1998-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-31 | 2001-08-02 | 2002-02-01 | $3760.00 | Window Closed / Lapsed |
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