Thin film transistor with reduced leakage current

Claim 2

A thin film transistor, comprising: a channel region formed in a predetermined region in a thin semiconductor layer to be opposite to a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; the length, in the channel width direction, of the semiconductor layer in junction boundaries between said pair of source/drain regions and said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 3

The thin film transistor according to claim 1, wherein said semiconductor layer includes: a first semiconductor layer extending across said pair of source/drain regions and channel region, and a second semiconductor layer formed to overlap with said first semiconductor layer in said pair of source/drain regions.

Claim 4

The thin film transistor according to claim 1, wherein the length, in the channel width direction, of the semiconductor layer in said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 5

The thin film transistor according to claim 1, wherein the thickness of the semiconductor layer in the junction boundaries between said pair of source/drain regions and said channel region is smaller than the thickness of the semiconductor layer in said source/drain regions.

Claim 6

The thin film transistor according to claim 4, wherein the thickness of the semiconductor layer in the junction boundaries between said source/drain regions and channel region is approximately 100 Å.

Claim 7

A thin film transistor, comprising a channel region formed in a predetermined region in a thin semiconductor layer to be opposite to a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; said semiconductor layer including: a first semiconductor layer extending across said pair of source/drain regions and channel region, and a second semiconductor layer formed to overlap with said first semiconductor layer in said pair of source/drain regions, wherein the length, in the channel width direction, of the semiconductor layer in junction boundaries between said pair of source/drain regions and said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 8

A thin film transistor, comprising a channel region formed in a predetermined region in a thin semiconductor layer to be opposite to a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; said semiconductor layer including: a first semiconductor layer extending across said pair of source/drain regions and channel region, and a second semiconductor layer formed to overlap with said first semiconductor layer in said pair of source/drain regions, wherein the length, in the channel width direction, of the semiconductor layer in junction boundaries between said pair of source/drain regions and said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 9

The thin film transistor according to claim 6, wherein said first and second semiconductor layers are polycrystalline silicon layers.

Claim 10

The thin film transistor according to claim 6, wherein the thickness of said first semiconductor layer is about 50 to about 200 Å, and the thickness of said second semiconductor layer is about 300 to about 1000 Å.

Claim 11

The thin film transistor according to claim 6, wherein the length, in the channel width direction, of the channel region in said first semiconductor layer is smaller than the length, in the channel width direction, of said second semiconductor layer.

Claim 12

The thin film transistor according to claim 9, wherein the length, in the channel width direction, of said first semiconductor layer is smaller than the length, in the channel width direction, of said second semiconductor layer.

Claim 13

The thin film transistor according to claim 6, wherein said first semiconductor layer is formed on said second semiconductor layer.

Claim 14

A thin film transistor, comprising: a channel region formed in a predetermined region in a thin semiconductor layer of polycrystalline silicon to be opposite a gate electrode with a gate insulating film interposed therebetween; a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; and a plasma insulating film formed in contact with at least the channel region of the semiconductor layer; said semiconductor layer including hydrogen combined with silicon in the vicinity of a grain boundary.

Claim 15

A thin film transistor, comprising: a channel region formed in a predetermined region in a thin semiconductor layer of polycrystalline silicon to be opposite a gate electrode with a gate insulating film interposed therebetween; a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; and a plasma insulating film formed in contact with at least the channel region of the semiconductor layer; said semiconductor layer including hydrogen combined with silicon in the vicinity of a grain boundary.

Claim 16

The thin film transistor according to claim 12, wherein said plasma insulating film is a plasma nitride film.

Claim 17

The thin film transistor according to claim 12, wherein said plasma insulating film is a plasma oxide film.

Claim 18

A thin film transistor, comprising a channel region formed in a predetermined region in a thin semiconductor layer of polycrystalline silicon to be opposite a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; wherein said semiconductor layer including hydrogen combined with silicon in the vicinity of a grain boundary. the length, in the channel width direction, of the semiconductor layer in said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 19

A thin film transistor, comprising a channel region formed in a predetermined region in a thin semiconductor layer of polycrystalline silicon to be opposite a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; wherein said semiconductor layer including hydrogen combined with silicon in the vicinity of a grain boundary. the length, in the channel width direction, of the semiconductor layer in said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 20

AN SRAM comprising memory cells, each including a pair of first and second CMSOS inverters connected so as to constitute a flip-flop circuit, and first and second MOS access transistors connected to node points of the flip-flop circuit, respectively, said first CMOS inverter comprising a first MOS drive transistor of a first conductivity type formed on a main surface of a silicon substrate, and a first thin film transistor of a second conductivity type formed on a surface of an interlevel insulating layer formed on said main surface of the silicon substrate, said second CMOS inverter comprising a second MOS drive transistor of the first conductivity type formed on the main surface of the silicon substrate, and a second thin film transistor of the second conductivity type formed on said surface of the interlevel insulating layer, and said first MOS access transistor and said second MOS access transistor being formed on the main surface of said silicon substrate, said SRAM comprising: first interconnection means for connecting a gate electrode of said first MOS drive transistor, a source/drain region of said second MOS access transistor, and a source/drain region of said second thin film transistor; and second interconnection means for connecting a gate electrode of said second MOS drive transistor, a source/drain region of said first MOS access transistor, and a source/drain region of said first thin film transistor; said first and second thin film transistor including: a channel region formed in a predetermined region in a thin semiconductor layer to be opposite to a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; wherein the length, in the channel width direction, of the semiconductor layer in junction boundaries between said pair of source/drain regions and said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.

Claim 21

AN SRAM comprising memory cells, each including a pair of first and second CMSOS inverters connected so as to constitute a flip-flop circuit, and first and second MOS access transistors connected to node points of the flip-flop circuit, respectively, said first CMOS inverter comprising a first MOS drive transistor of a first conductivity type formed on a main surface of a silicon substrate, and a first thin film transistor of a second conductivity type formed on a surface of an interlevel insulating layer formed on said main surface of the silicon substrate, said second CMOS inverter comprising a second MOS drive transistor of the first conductivity type formed on the main surface of the silicon substrate, and a second thin film transistor of the second conductivity type formed on said surface of the interlevel insulating layer, and said first MOS access transistor and said second MOS access transistor being formed on the main surface of said silicon substrate, said SRAM comprising: first interconnection means for connecting a gate electrode of said first MOS drive transistor, a source/drain region of said second MOS access transistor, and a source/drain region of said second thin film transistor; and second interconnection means for connecting a gate electrode of said second MOS drive transistor, a source/drain region of said first MOS access transistor, and a source/drain region of said first thin film transistor; said first and second thin film transistor including: a channel region formed in a predetermined region in a thin semiconductor layer to be opposite to a gate electrode with a gate insulating film interposed therebetween; and a pair of source/drain regions formed in said thin semiconductor layer with said channel region interposed therebetween; wherein the length, in the channel width direction, of the semiconductor layer in junction boundaries between said pair of source/drain regions and said channel region is smaller than the length, in the channel width direction, of the semiconductor layer in said source/drain regions.