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US5280493A
Expired / Lapsed
US
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Quantum wire laser
Assignee: Sharp Corp
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Filing: 1992-03-27
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Granted: 1994-01-18
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Expires: 2012-03-27
Abstract
Abstract A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
Inventors
- 👤 Haruhisa Takiguchi
- 👤 Hiroaki Kudo
- 👤 Mototaka Taneya
- 👤 Satoshi Sugahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:57
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/341; B; B82; B82Y; B82Y20/00; H01S5/10; H01S5/12; H01S5/1228; H01S5/20; H01S5/2054; H01S5/2059; H01S5/22; H01S5/223; H01S5/2238; H01S5/227; H01S5/2272; H01S5/343
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
134 words
A quantum wire laser comprising a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
Claim 2
Dependent Claim
134 words
A quantum wire laser comprising a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
Claim 3
Dependent Claim
22 words
A quantum wire laser according to claim 1, wherein a ridge in a reverse mesa shape is formed in a [110] direction.
Claim 4
Dependent Claim
23 words
A quantum wire laser according to claim 1, wherein a plurality of quantum wires are arranged in parallel in a laser cavity direction.
Claim 5
Dependent Claim
23 words
A quantum wire laser according to claim 1, wherein a group of quantum wire layers are laminated as the first quantum well layer.
Claim 6
Dependent Claim
122 words
A quantum wire laser according to claim 1, wherein said substrate (10) is made of an n-GaAs, said first quantum well layer (14) is made of an un-Al x Ga 1-x As (x=0.05), one (13) of said barrier layers which is laminated on an n-AlGaAs cladding layer (11) which is laminated on said substrate (10) is made of an n-Al x Ga- 1-x As (x=0.5), the other (15) of said barrier layers which is laminated on said first quantum layer (14) is made of a semi-insulating Al x Ga 1-x As (x=0.5), said first (16) and second (18) barrier layers are made of an un-Al x Ga 1-x As (x-0.5), and said second quantum well layer (17) is made of an un-GaAs.
Claim 7
Dependent Claim
116 words
(Added) A quantum wire laser according to claim 1, wherein said substrate (30) is made of an n-GaAs, said first quantum well layer (33) is made of an un-Al x Ga 1-x As (x=0.5), one (32) of said barrier layers which is laminated on said substrate (30) is layer (31) which is laminated on said substrate (30) is made of an n-AlGaAs, the other (34) of said barrier layers which is laminated on said first quantum well layer (33) is made of a semi-insulating AlGaAs, said first barrier layer (35) is made of an n-AlGaAs, said second barrier layer (37) is made of a p-AlGaAs, and said second quantum well layer is made of an un-GaAs.
Claim 8
Dependent Claim
123 words
(Added) A quantum wire laser according to claim 4, wherein said substrate (50) is made of an n-GaAs, said first quantum well layer (53) is made of an un-Al x Ga 1-x As (x=0.5), one (52) of said barrier layers which is laminated on an n-AlGaAs cladding layer (51) which is laminated on said substrate (50) is made of an n-Al x Ga 1-x As (x=0.5), the other (54) of said barrier layers which is laminated on said first quantum well layer (53) is made of a p-Al x Ga 1-x As (x=0.5), said first (56) and second (58) barrier layers are made of an un-Al x Ga 1-x As (x=0.5), and said second quantum well layer (57) is made of an un-GaAs.
References Cited (Backward Citations)
JPS613487A
Cited
JPS6421986A
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WO1989007832A1
Cited
JPH0268482A
Cited
JPH02119285A
Cited
US5070510A
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