Manufacture of quantum fine wire laser

Abstract

Abstract PURPOSE:To enable the formation of a structure of quantum fine wire by a method wherein a semiconductor layer of one conductivity type and the second insulation layer are successively adhered on the first semiinsulation layer, and a recess is formed by mesa etching in the part of the semiconductor layer on the side surfaces of three exposed layers, and the bottom of this recess is coated with an active layer, which layer is then coated with a semiconductor layer of reverse conductivity type. CONSTITUTION:A semi-insulation Al0.3Ga0.7As layer 12, an N<+> type Al0.4Ga0.6As layer 13 and a semi-insulation Al0.3Ga0.7As layer 14 are successively adhered on a semi- insulation GaAs substrate 11. Next, when mesa etching is carried out with the mixed solution of sulfuric acid with hydrogen peroxide acid, the recess of the semiconductor layer 13 of one conductivity type can be formed in the mesa slope. Then, the second epitaxial growth is carried out from a lateral direction. An undoped GaAs layer as the active layer 15, a P<+> type Al0.4Ga0.6As layer as the semiconductor layer 16 of reverse conductivity type, and a P<+> type GaAs layer as a contact layer 17 are successively etched. Thereby, the actie layer 15 is buried in the recess, resulting in the formation of a quantum fine wire. AuZn as a P type contact 18 and AuGe/Au as an N type contact 19 are adhered by evaporation into electrodes.

Inventors

• 👤 Shuichi Miura
• 👤 秀一 三浦

Bibliographic Details