ECI compatible CMOS off-chip driver using feedback to set output levels

Claim 2

A CMOS off-chip driver circuit generating output voltage swings compatible with ECL levels comprising: enable circuit means for generating true and complement outputs in response to an enable input signal; a CMOS NAND gate receiving a data input signal and said true output of said enable circuit means and generating a NANDed output signal; a CMOS NOR gate receiving said data input signal and said complement output of said enable circuit means and generating a NORed output signal; first and second drive FETs of complementary type connected to an output terminal, said first drive FET being driven by said NANDed output signal and said second drive FET being driven by said NORed output signal; and feedback means for sensing an output signal level on said output terminal and controlling said first and second drive FETs to produce ECL compatible voltage levels.

Claim 3

The CMOS off-chip driver circuit recited in claim 1 wherein said enable circuit means comprises: a CMOS inverter stage receiving an inhibit input signal and generating a complement inhibit output signal; and a CMOS AND gate receiving an enable input signal and said complement inhibit output signal and generating an ANDed output signal as said true output signal and a complementary ANDed output signal as said complement output signal.

Claim 4

The CMOS off-chip driver circuit recited in claim 1 wherein said feedback means comprises a first feedback FET of the same conductivity type as said first drive FET and a second feedback FET of the same conductivity type as said second driver FET, said first and second feedback FETs being cross-coupled respectively to said NORed output signal and said NANDed output signal.

Claim 5

The CMOS off-chip driver circuit recited in claim 3 wherein said feedback means further comprises a third FET of the same conductivity type as said first drive FET connected in series with said first feedback FET between a gate of said first drive FET and said output terminal, said third FET being driven by said NORed output signal, and a fourth FET of the same conductivity type as said second drive FET connected in series with said second feedback FET between a gate of said second drive FET and said output terminal, said fourth FET being driven by said NANDed output signal.

Claim 6

A CMOS off-chip driver circuit generating output voltage swings compatible with ECL levels comprising: a CMOS inverter stage receiving an inhibit input signal and generating a complement inhibit output signal; and a CMOS AND gate receiving an enable input signal and said complement inhibit output signal and generating an ANDed output signal and a complementary ANDed output signal; a CMOS NAND gate receiving a data input signal and said ANDed output signal and generating a NANDed output signal; a CMOS NOR gate receiving said data input signal and said complementary ANDed output signal and generating a NORed output signal; first and second drive FETs connected to an output terminal, said first drive FET being a P-type FET and driven by said NANDed output signal and said second drive FET being an N-type FET and driven by said NORed output signal; and feedback means for sensing an output signal level on said output terminal and controlling said first and second drive FETs to produce ECL compatible voltage levels, said feedback means comprising first and second P-type feedback FETs connected in series between a gate of said first drive FET and said output terminal and third and fourth N-type feedback FETs connected in series between a gate of said second drive FET and said output terminal, said first and third feedback FETs being cross-coupled respectively to said NORed output signal and said NANDed output signal and said second and fourth feedback FETs being connected respectively to said ANDed and complementary ANDed output signals.

Claim 7

A CMOS off-chip driver circuit generating output voltage swings compatible with ECL levels comprising: a CMOS inverter stage receiving an inhibit input signal and generating a complement inhibit output signal; and a CMOS AND gate receiving an enable input signal and said complement inhibit output signal and generating an ANDed output signal and a complementary ANDed output signal; a CMOS NAND gate receiving a data input signal and said ANDed output signal and generating a NANDed output signal; a CMOS NOR gate receiving said data input signal and said complementary ANDed output signal and generating a NORed output signal; first and second drive FETs connected to an output terminal, said first drive FET being a P-type FET and driven by said NANDed output signal and said second drive FET being an N-type FET and driven by said NORed output signal; and feedback means for sensing an output signal level on said output terminal and controlling said first and second drive FETs to produce ECL compatible voltage levels, said feedback means comprising first and second P-type feedback FETs connected in series between a gate of said first drive FET and said output terminal and third and fourth N-type feedback FETs connected in series between a gate of said second drive FET and said output terminal, said first and third feedback FETs being cross-coupled respectively to said NORed output signal and said NANDed output signal and said second and fourth feedback FETs being connected respectively to said ANDed and complementary ANDed output signals.