US5278786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile semiconductor memory device having an area responsive to writing allowance signal
Assignee: Mitsubishi Electric Corp
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Filing: 1991-10-08
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Granted: 1994-01-11
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Expires: 2011-10-08
Abstract
Abstract A non-volatile semiconductor memory device comprises an area in which only one rewriting is possible and an area in which rewriting is possible repeatedly. A control circuit generates a high voltage from a boosting circuit and operates a writing circuit to write data in the rewritable area whose address designated by an address register/decoder. The control circuit allows writing of data into the area in which only one rewriting is possible by the writing circuit in response to an external signal. Therefore, even if the writing mode is set influenced by the unstable state of the power supply, destruction of the data in the area in which only one rewriting is possible can be prevented.
Inventors
- 👤 Koichi Kawauchi
- 👤 Seiichiro Asari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:27
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/24; G11C16/00; G11C16/02; G11C16/06; G11C16/22; G11C16/225
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
350 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including first and second memory areas in which electrical rewriting of data is possible; and writing control means for writing in the first memory area of said semiconductor memory means and for allowing writing of data to the second area of said semiconductor memory means when an external writing allowance signal is applied to said writing control means, wherein said writing control means comprises first writing means provided corresponding to the first memory area of said semiconductor memory means for writing data in said first memory area; second writing means provided corresponding to the second memory area of said semiconductor memory means for writing data in said second memory area; control means responsive to said externally applied signal for applying a write allowing signal to said second writing means so as to carry out writing of data in said second memory area of said semiconductor memory means by said second writing means, and address designating means for designating addresses of the first and second memory areas in said semiconductor memory means, wherein said control means comprises boosting means for boosting a supply voltage to generate a high voltage; said first writing means comprises first switching means responsive to an address signal applied from said address designating means for applying a high voltage from said boosting means to the first memory area of said semiconductor memory means for writing data; said second writing means comprises second switching means responsive to the address signal applied from said address designating means and the writing allowing signal applied from said controlling means for applying the high voltage from said boosting means to the second memory area of said semiconductor memory means for writing data, wherein said boosting means comprises first high voltage generating means for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and second high voltage generating means for generating a high voltage for writing data in the second memory area of said semiconductor memory means.
Claim 2
Dependent Claim
350 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including first and second memory areas in which electrical rewriting of data is possible; and writing control means for writing in the first memory area of said semiconductor memory means and for allowing writing of data to the second area of said semiconductor memory means when an external writing allowance signal is applied to said writing control means, wherein said writing control means comprises first writing means provided corresponding to the first memory area of said semiconductor memory means for writing data in said first memory area; second writing means provided corresponding to the second memory area of said semiconductor memory means for writing data in said second memory area; control means responsive to said externally applied signal for applying a write allowing signal to said second writing means so as to carry out writing of data in said second memory area of said semiconductor memory means by said second writing means, and address designating means for designating addresses of the first and second memory areas in said semiconductor memory means, wherein said control means comprises boosting means for boosting a supply voltage to generate a high voltage; said first writing means comprises first switching means responsive to an address signal applied from said address designating means for applying a high voltage from said boosting means to the first memory area of said semiconductor memory means for writing data; said second writing means comprises second switching means responsive to the address signal applied from said address designating means and the writing allowing signal applied from said controlling means for applying the high voltage from said boosting means to the second memory area of said semiconductor memory means for writing data, wherein said boosting means comprises first high voltage generating means for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and second high voltage generating means for generating a high voltage for writing data in the second memory area of said semiconductor memory means.
Claim 3
Dependent Claim
113 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including first and second memory areas in which electrical rewriting of data is possible; writing control means for controlling writing in said first and second memory areas; said writing control means comprising first high voltage generating means for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and second high voltage generating means for generating a high voltage for writing data in the second memory area of said semiconductor memory means and means for disabling said second high voltage generating means in response to a command signal.
Claim 4
Dependent Claim
113 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including first and second memory areas in which electrical rewriting of data is possible; writing control means for controlling writing in said first and second memory areas; said writing control means comprising first high voltage generating means for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and second high voltage generating means for generating a high voltage for writing data in the second memory area of said semiconductor memory means and means for disabling said second high voltage generating means in response to a command signal.
Claim 5
Dependent Claim
154 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including a first memory area for electrical writing of data any number of times and a second memory area for only one-time electrical writing of data; first high voltage generating means having a first operating potential input node connected to a source of operating potential for generating a high voltage for writing data in the first memory area of said semiconductor memory means; second high voltage generating means having a second operating potential input node connectable to the source of operating potential for generating a high voltage for writing data in the second memory area of said semiconductor memory means; and memory overwrite protection means, selectively connecting said second operating potential node to the source of operating potential and a source of ground potential node for, respectively, enabling and disabling said second high voltage generating means.
Claim 6
Dependent Claim
154 words
A non-volatile semiconductor memory device in which electrical rewriting of data is possible, comprising: non-volatile semiconductor memory means including a first memory area for electrical writing of data any number of times and a second memory area for only one-time electrical writing of data; first high voltage generating means having a first operating potential input node connected to a source of operating potential for generating a high voltage for writing data in the first memory area of said semiconductor memory means; second high voltage generating means having a second operating potential input node connectable to the source of operating potential for generating a high voltage for writing data in the second memory area of said semiconductor memory means; and memory overwrite protection means, selectively connecting said second operating potential node to the source of operating potential and a source of ground potential node for, respectively, enabling and disabling said second high voltage generating means.
Claim 7
Independent Claim
190 words
A method of overwrite protection of a non-volatile semiconductor memory device of a type comprising: non-volatile semiconductor memory means including a first memory area for electrical writing of data any number of times and a second memory area for only one-time electrical writing of data; a first high voltage generating means having a first operating potential input node connected to a source of operating potential and being responsive to a write control signal for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and a second high voltage generating means having a second operating potential input node connectable to the source of operating potential and being responsive to the write control signal for generating a high voltage for writing data in the second memory area of said semiconductor memory means; the overwrite protection method comprising the steps of: connecting said second operating potential node to the source of operating potential during a one write cycle; and thereafter disconnecting said second operating potential node from said source of operating potential and connecting said second operating potential node to a source of ground potential.
Claim 8
Independent Claim
190 words
A method of overwrite protection of a non-volatile semiconductor memory device of a type comprising: non-volatile semiconductor memory means including a first memory area for electrical writing of data any number of times and a second memory area for only one-time electrical writing of data; a first high voltage generating means having a first operating potential input node connected to a source of operating potential and being responsive to a write control signal for generating a high voltage for writing data in the first memory area of said semiconductor memory means, and a second high voltage generating means having a second operating potential input node connectable to the source of operating potential and being responsive to the write control signal for generating a high voltage for writing data in the second memory area of said semiconductor memory means; the overwrite protection method comprising the steps of: connecting said second operating potential node to the source of operating potential during a one write cycle; and thereafter disconnecting said second operating potential node from said source of operating potential and connecting said second operating potential node to a source of ground potential.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-10 | 1997-07-12 | 1998-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-10 | 2001-07-12 | 2002-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-10 | 2005-07-12 | 2006-01-11 | $7700.00 | Window Closed / Lapsed |