Non-volatile semiconductor memory device

Abstract

Abstract PURPOSE:To shorten a writing time by providing plural memory blocks selected by a column selection signal and plural source voltage circuits for selecting by the column selection signal, or supplying a prescribed constant voltage to a common source wiring in the respective memory blocks in a writing and an erasing modes. CONSTITUTION:A memory matrix is divided into the plural memory blocks selected by a column selection line Y and the respective memory blocks have a source end S connected to all the sources of the memory elements of all memory cells in common included in the memory blocks, so that a capacity added to the source of the memory element of the memory cell selected by a row selection line and the column selection line at the time of the writing mode can be remarkably made smaller than the conventional example. Thereby, a time until the voltage of the output of a booster circuit D reaches a writing/ erasing voltage is shortened and the writing time can be set in short.

Inventors

• 👤 Kiyokazu Hashimoto
• 👤 潔和 橋本

Bibliographic Details