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US5277750A
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Method for anisotropic dry etching of metallization layers, containing aluminum or aluminum alloys, in integrated semiconductor circuits
Assignee: Siemens AG
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Filing: 1992-03-05
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Granted: 1994-01-11
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Expires: 2012-03-05
Abstract
Abstract A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask. Etching is performed with a strictly anisotropically attacking etching gas mixture containing an iodine compound being volatile under normal conditions, wherein an accurately defined vertical profile of the conduction lines is formed.
Inventors
- 👤 Wolfgang Frank
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:56
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
54 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, is integrated semicondcutor circuits, using an etching mask for forming conduction lines, with the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines.
Claim 2
Independent Claim
54 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, is integrated semicondcutor circuits, using an etching mask for forming conduction lines, with the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines.
Claim 3
Dependent Claim
28 words
The method according to claim 1, which comprises performing the etching step with an etching gas mixture containing at least one halogen-containing compound in addition to hydrogen iodide.
Claim 4
Dependent Claim
37 words
The method according to claim 1, which comprises performing the etching step with an etching gas mixture additionally containing a substance selected from the group consisting of N 2 O, CO, CO 2 and CH 4 .
Claim 5
Dependent Claim
40 words
The method according to claim 1, which comprises performing the etching step with an etching gas mixture containing, in addition to the hydrogen iodide, a carrier gas selected from the group consisting of nitrogen, oxygen, hydrogen and a noble gas.
Claim 6
Dependent Claim
30 words
The method according to claim 1, which comprises forming the metallization layers from an aluminum alloy containing at least one material selected from the group consisting of silicon and copper.
Claim 7
Dependent Claim
17 words
The method according to claim 1, which comprises etching the metallization layers by plasma-assisted reactive ion etching.
Claim 8
Dependent Claim
16 words
The method according to claim 1, which comprises applying a photoresist layer as the etching mask.
Claim 9
Dependent Claim
22 words
The method according to claim 1, which comprises applying a hard mask being structured by a photoresist mask, as the etching mask.
Claim 10
Dependent Claim
40 words
The method according to claim 1, which comprises applying a hard mask made of a material selected from the group consisting of SiO 2 and Si 3 N 4 , being structured by a photoresist mask, as the etching mask.
Claim 11
Dependent Claim
82 words
In a method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing an iodide compound being volatile under normal conditions, and a substance selected from the group consisting of a simple carbon compound, a simple nitrogen compound and a simple oxygen compound, and forming an accurately defined vertical profile of the conduction lines.
Claim 12
Dependent Claim
82 words
In a method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing an iodide compound being volatile under normal conditions, and a substance selected from the group consisting of a simple carbon compound, a simple nitrogen compound and a simple oxygen compound, and forming an accurately defined vertical profile of the conduction lines.
Claim 13
Dependent Claim
24 words
The method according to claim 10, which comprises performing the etching step with an etching gas mixture containing hydrogen iodide as the iodine compound.
Claim 14
Independent Claim
60 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, with the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion.
Claim 15
Independent Claim
60 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, with the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion.
Claim 16
Independent Claim
63 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion, in the submicron range.
Claim 17
Independent Claim
63 words
A method for anisotropic dry etching of metallization layers containing aluminum or aluminum alloys, in integrated semiconductor circuits, using an etching mask for forming conduction lines, the improvement which comprises etching with a strictly anisotropically attacking etching gas mixture containing hydrogen iodide, and forming an accurately defined vertical profile of the conduction lines without sidewall passivation and without corrosion, in the submicron range.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-01-10 | 1997-07-12 | 1998-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-10 | 2001-07-12 | 2002-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-10 | 2005-07-12 | 2006-01-11 | $7700.00 | Window Closed / Lapsed |