Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
186 words
A compact and relatively noise free memory device comprising: a first array comprised of a plurality of memory cells interconnected by a plurality of bit lines and word lines and laid out so that accessible cells are located at two out of every three bit lines encountered along each word line. a first set of latches, each having at least two connectors, each connector being multiplexed to a predetermined number of the plurality of bit lines; and a second set of latches, each having a first connector multiplexed to a predetermined number of the plurality of bit lines, the connectors of the first set of latches and the second set of latches being so arranged with respect to the plurality of bit lines that, for any given word line, the connectors of at least one of the latches of the first set can be coupled to a cell bit line and a non-adjacent reference bit line, leaving an intervening cell bit line, while the first connector of at least one of the latches of the second set can be coupled to the intervening cell bit line.
Claim 2
Dependent Claim
186 words
A compact and relatively noise free memory device comprising: a first array comprised of a plurality of memory cells interconnected by a plurality of bit lines and word lines and laid out so that accessible cells are located at two out of every three bit lines encountered along each word line. a first set of latches, each having at least two connectors, each connector being multiplexed to a predetermined number of the plurality of bit lines; and a second set of latches, each having a first connector multiplexed to a predetermined number of the plurality of bit lines, the connectors of the first set of latches and the second set of latches being so arranged with respect to the plurality of bit lines that, for any given word line, the connectors of at least one of the latches of the first set can be coupled to a cell bit line and a non-adjacent reference bit line, leaving an intervening cell bit line, while the first connector of at least one of the latches of the second set can be coupled to the intervening cell bit line.
Claim 3
Dependent Claim
90 words
The apparatus of claim 1, wherein each latch of the second set of latches has a second connector, the apparatus further comprising a second array of memory cells interconnected by a plurality of bit lines and word lines wherein the second connector of each latch of the second set of latches is multiplexed to a plurality of bit lines in the second array so that it can be coupled to a reference bit line therein while the first connector is coupled to a cell bit line in the first array.
Claim 4
Dependent Claim
15 words
The apparatus of claim 1, wherein the connectors are all multiplexed to three bit lines.
Claim 5
Dependent Claim
20 words
The apparatus of claim 3 wherein the bit lines to which the connectors are multiplexed are adjacent to each other.
Claim 6
Dependent Claim
57 words
The apparatus of claim 4 wherein the connectors of each latch of the first set can be coupled to one common bit line and the first connector of at least one of the latches of the second set can be coupled to the same common bit line as well as a bit line on either side thereof.
Claim 7
Dependent Claim
21 words
The apparatus of claim 5 wherein the cell layout of the first memory array is in half passing word line form.
Claim 8
Dependent Claim
27 words
The apparatus of claim 6 further comprising means connected to the latches of the first set for inputting or outputting data to and from the memory device.
Claim 9
Dependent Claim
23 words
The apparatus of claim 7 wherein the bit lines are parallel to each other and word lines are perpendicular to the bit lines.
Claim 10
Dependent Claim
20 words
The apparatus of claim 3 wherein bit lines to which each connector is multiplexed are not adjacent to each other.
Claim 11
Dependent Claim
15 words
The apparatus of claim 1 wherein the connectors are all multiplexed to two bit lines.
Claim 12
Dependent Claim
20 words
The apparatus of claim 10 wherein the bit lines to which the connectors are multiplexed are adjacent to each other.
Claim 13
Dependent Claim
70 words
The apparatus of claim 11 wherein each latch of the first set is paired with one of the latches of the second set and wherein the connectors of a latch of the first set are not multiplexed to any common bit lines but a connector of its paired latch of the second set is multiplexed to a bit line common to each connector of the latch of the first set.
Claim 14
Dependent Claim
23 words
The apparatus of claim 12 wherein the cells of at least the first array are laid out in half passing word line form.
Claim 15
Dependent Claim
28 words
The apparatus of claim 13 wherein the bit lines of at least the first array are parallel and the word lines therein are perpendicular to the bit lines.
Claim 16
Dependent Claim
262 words
A compact and relatively noise free memory device comprising: a first memory array and a second memory array each comprised of a plurality of memory cells interconnected by a plurality of bit lines and word lines and laid out so that accessible cells are located in a repetitive pattern along each bit line and word line; a first set of folded sense amplifiers associated with the first memory array and a second set of folded sense amplifiers associated with the second memory array, each folded sense amplifier having two connectors, each connector of the first set being multiplexed to a predetermined number of bit lines of the first memory array and each connector of the second set being multiplexed to a predetermined number of bit lines in the second memory array; a set of open sense amplifiers each having a first connector multiplexed to a predetermined number of bit lines in the first memory array and a second connector multiplexed to a predetermined number of bit lines in the second memory array; the connectors of the first and second set of folded sense amplifiers and the set of open sense amplifiers eing so multiplexed with respect to the bit lines that, for any given word line, the connectors of at least one of the associated set of folded sense amplifiers can be coupled to a cell bit line and a non-adjacent reference bit line, leaving an intervening cell bit line while the first connector of at least one of the open sense amplifiers can be coupled to the intervening cell bit line.
Claim 17
Dependent Claim
262 words
A compact and relatively noise free memory device comprising: a first memory array and a second memory array each comprised of a plurality of memory cells interconnected by a plurality of bit lines and word lines and laid out so that accessible cells are located in a repetitive pattern along each bit line and word line; a first set of folded sense amplifiers associated with the first memory array and a second set of folded sense amplifiers associated with the second memory array, each folded sense amplifier having two connectors, each connector of the first set being multiplexed to a predetermined number of bit lines of the first memory array and each connector of the second set being multiplexed to a predetermined number of bit lines in the second memory array; a set of open sense amplifiers each having a first connector multiplexed to a predetermined number of bit lines in the first memory array and a second connector multiplexed to a predetermined number of bit lines in the second memory array; the connectors of the first and second set of folded sense amplifiers and the set of open sense amplifiers eing so multiplexed with respect to the bit lines that, for any given word line, the connectors of at least one of the associated set of folded sense amplifiers can be coupled to a cell bit line and a non-adjacent reference bit line, leaving an intervening cell bit line while the first connector of at least one of the open sense amplifiers can be coupled to the intervening cell bit line.
Claim 18
Dependent Claim
36 words
The apparatus of claim 15 wherein the repetitive pattern in which the cells are laid out is such that accessible cells are located at two out of every three bit lines encountered along a word line.
Claim 19
Dependent Claim
15 words
The apparatus of Claim 16 wherein the connectors are all multiplexed to three bit lines.
Claim 20
Dependent Claim
20 words
The apparatus of claim 17 wherein the bit lines to which the connectors are multiplexed are adjacent to each other.
Claim 21
Dependent Claim
51 words
The apparatus of claim 18 wherein the connectors of each folded sense amplifier can be coupled to one common bit line and the first connector of at least one open sense amplifier can be coupled to the same common bit line, as well as a bit line on either side thereof.
Claim 22
Dependent Claim
21 words
The apparatus of claim 19 wherein the cell layout of the first memory array is in half passing word line form.
Claim 23
Dependent Claim
26 words
The apparatus of claim 20 further comprising means connected to the folded bit sense amplifier for inputting or outputting data to and from the memory device.
Claim 24
Dependent Claim
23 words
The apparatus of claim 21 wherein the bit lines are parallel to each other and word lines are perpendicular to the bit lines.
Claim 25
Dependent Claim
21 words
The apparatus of claim 16 wherein the bit lines to which the connectors are multiplexed are not adjacent to each other.
Claim 26
Dependent Claim
14 words
The apparatus of claim 16 wherein the connectors are multiplexed to two bit lines.
Claim 27
Dependent Claim
20 words
The apparatus of claim 24 wherein the bit lines to which each connector is multiplexed are adjacent to each other.
Claim 28
Dependent Claim
60 words
The apparatus of claim 25 wherein each folded sense amplifier is paired with one of the open sense amplifiers and wherein the connectors of a folded sense amplifier are not multiplexed to any common bit lines but a connector of its paired open sense amplifier is multiplexed to a bit line common to each connector of the folded sense amplifier.
Claim 29
Dependent Claim
27 words
The apparatus of claim 26 wherein the cells of the first memory array and the second memory array are laid out in halt passing word line form.
Claim 30
Dependent Claim
31 words
The apparatus of claim 27 wherein the bit lines of the first memory array and the second memory array are parallel and the word lines therein are perpendicular to bit lines.
Claim 31
Independent Claim
113 words
A method for performing a relatively noise free data input/output operation on a memory device having an array of memory cells laid out so that accessible cells are located in a repetitive pattern along each bit line and word line comprising the steps of: activating a word line for accessing a targeted cell; coupling a folded bit line sense amplifier to a reference bit line and a cell bit line leaving an unselected intervening cell bit line; coupling one connector of an open sense amplifier to the intervening cell bit line and capacitively balancing the open sense amplifier through its other connector; and conducting the data input/output through one of the sense amplifiers.
Claim 32
Independent Claim
113 words
A method for performing a relatively noise free data input/output operation on a memory device having an array of memory cells laid out so that accessible cells are located in a repetitive pattern along each bit line and word line comprising the steps of: activating a word line for accessing a targeted cell; coupling a folded bit line sense amplifier to a reference bit line and a cell bit line leaving an unselected intervening cell bit line; coupling one connector of an open sense amplifier to the intervening cell bit line and capacitively balancing the open sense amplifier through its other connector; and conducting the data input/output through one of the sense amplifiers.
Claim 33
Dependent Claim
23 words
The method of claim 29 wherein said step of conducting the data operation is carried out through said folded bit line sense amplifier.