Patent US5274459A successfully refreshed from Google Patents.
US5274459A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state image sensing device with a feedback gate transistor at each photo-sensing section
Assignee: Sony Corp
•
Filing: 1992-04-09
•
Granted: 1993-12-28
•
Expires: 2012-04-09
Abstract
Abstract A solid state image sensing device is formed of a plurality of photo-sensing sections arranged in a two-dimensional fashion at a pixel unit in the horizontal and vertical directions. In this case, each of the plurality of photo-sensing sections is formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to the feedback gate transistor and whose gate electrode is connected to a horizontal selection line, and a photoelectric conversion element provided under a channel region of each of the feedback gate transistor and the vertical selection transistor, whereby the sensitivity of the solid state image sensing device is increased and the smear thereof can be lowered.
Inventors
- 👤 Masaharu Hamasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:40
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/80; H10F39/803; H10F39/8033; H04; H04N; H04N25/00; H04N25/40; H04N25/44; H04N25/441; H04N25/60; H04N25/616; H04N25/62; H04N25/625; H04N25/63; H04N25/70; H04N25/76; H04N25/78; H10F39/8037; H10F39/80377
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
145 words
A solid state image sensing device, comprising: a plurality of photo-sensing sections arranged in two-dimensional fashion in horizontal and vertical directions, each of said plurality of photo-sensing sections being formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to said feedback gate transistor and whose gate electrode is connected to a horizontal selection line, first and second photoelectric conversion elements, the first photoelectric conversion element being provided under a channel region of said feedback gate transistor and the second photoelectric conversion element being provided under a channel region of said vertical selection transistor, and a drain electrode of said vertical selection transistor being connected to a first potential and said source electrode of said feedback transistor being connected through load means to a second potential.
Claim 2
Dependent Claim
145 words
A solid state image sensing device, comprising: a plurality of photo-sensing sections arranged in two-dimensional fashion in horizontal and vertical directions, each of said plurality of photo-sensing sections being formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected in series to said feedback gate transistor and whose gate electrode is connected to a horizontal selection line, first and second photoelectric conversion elements, the first photoelectric conversion element being provided under a channel region of said feedback gate transistor and the second photoelectric conversion element being provided under a channel region of said vertical selection transistor, and a drain electrode of said vertical selection transistor being connected to a first potential and said source electrode of said feedback transistor being connected through load means to a second potential.
Claim 3
Dependent Claim
22 words
A solid state image sensing device as claimed in claim 1, in which each of said photoelectric conversion elements is a photo-diode.
Claim 4
Dependent Claim
152 words
A solid state image sensing device as claimed in claim 1, in which said feedback gate transistor and vertical selection transistor are formed together in common by a P-type silicon substrate, an N-type well region formed thereon, a P-type well region formed thereon through a P-type impurity layer, first and second transparent gate electrodes formed on a silicon oxide film over said P-type well region, an N + -type source region formed on a surface of said P-type well region, said source region being connected to said vertical signal line, an N - -type channel region provided at a portion around said source region and opposing said source region, an N + -type drain region formed around said channel region, and said second gate electrode being connected through a first contact to said horizontal selection line and said drain region being connected through a second contact to said drain current supply line.
Claim 5
Dependent Claim
27 words
An image sensing device according to claim 1 wherein said first and second photoelectric conversion elements are formed in common beneath the first and second gate electrodes.
Claim 6
Dependent Claim
146 words
A solid state image sensing device, comprising: a plurality of photo-sensing sections arranged in two-dimensional fashion in horizontal and vertical directions, each of said plurality of photo-sensing sections being formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected at one end of its channel in series to said feedback gate transistor whose gate electrode is connected to a horizontal selection line, and the other end of its channel being connected to a supply line, and first and second photoelectric conversion elements, the first photoelectric conversion element being provided under a channel region of said feedback gate transistor and the second photoelectric conversion element being provided under a channel region of said vertical selection transistor, and the first and second photoelectric conversion elements being formed as a common region.
Claim 7
Dependent Claim
146 words
A solid state image sensing device, comprising: a plurality of photo-sensing sections arranged in two-dimensional fashion in horizontal and vertical directions, each of said plurality of photo-sensing sections being formed of a feedback gate transistor whose gate electrode and source electrode are both connected to a vertical signal line, a vertical selection transistor which is connected at one end of its channel in series to said feedback gate transistor whose gate electrode is connected to a horizontal selection line, and the other end of its channel being connected to a supply line, and first and second photoelectric conversion elements, the first photoelectric conversion element being provided under a channel region of said feedback gate transistor and the second photoelectric conversion element being provided under a channel region of said vertical selection transistor, and the first and second photoelectric conversion elements being formed as a common region.
Claim 8
Dependent Claim
137 words
A solid state image sensing device, comprising: a semiconductor substrate of a first conductivity type; a vertical selection transistor of a second conductivity type formed on said semiconductor substrate and having a channel region of said second conductivity type; a gate electrode of said vertical selection transistor being connected to a horizontal selection line; a drain electrode of said vertical selection transistor being connected to a first potential; a feedback gate transistor of said second conductivity type formed on said semiconductor substrate, said feedback transistor having a channel region of said second conductivity type and connected in series to said vertical selection transistor; and a source electrode and a gate electrode of said feedback gate transistor being both connected to a vertical signal line, said vertical signal line being connected through load means to a second potential.
Claim 9
Dependent Claim
137 words
A solid state image sensing device, comprising: a semiconductor substrate of a first conductivity type; a vertical selection transistor of a second conductivity type formed on said semiconductor substrate and having a channel region of said second conductivity type; a gate electrode of said vertical selection transistor being connected to a horizontal selection line; a drain electrode of said vertical selection transistor being connected to a first potential; a feedback gate transistor of said second conductivity type formed on said semiconductor substrate, said feedback transistor having a channel region of said second conductivity type and connected in series to said vertical selection transistor; and a source electrode and a gate electrode of said feedback gate transistor being both connected to a vertical signal line, said vertical signal line being connected through load means to a second potential.
References Cited (Backward Citations)
US4518863A
Cited
US4547806A
Cited
JPS61128683A
Cited
JPS61214870A
Cited
JPS62120785A
Cited
US5016108A
Cited
US4974093A
Cited
JPH01205674A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-27 | 1997-06-28 | 1997-12-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-27 | 2001-06-28 | 2001-12-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-27 | 2005-06-28 | 2005-12-28 | $7700.00 | Window Closed / Lapsed |