Solid-state imaging device having series-connected pairs of switching MOS transistors for transferring signal electric charges therethrough

Claim 2

A solid-state imaging device comprising: a plurality of photoelectric conversion elements, arranged in matrix form within a semiconductor substrate of a first conductivity type, for storing signal electric charges in accordance with incident light; first signal lines, arranged in parallel, for transmitting therethrough the signal electric charges stored in respective ones of said photoelectric conversion elements correspondingly coupled therewith and which are arrayed in a predetermined direction; first switch means for respectively effecting a transfer of a signal electric charge stored in each photoelectric conversion element to a corresponding first signal line coupled therewith, said first switch means including a plurality of transfer means for coupling said plurality of photoelectric conversion elements to said first signal lines, each one of said plurality of transfer means is comprised of a first MOS transistor formed in said semiconductor substrate wherein one of a source and drain thereof is correspondingly associated with a respective one of said photoelectric conversion elements and a second MOS transistor provided above said semiconductor substrate on an insulating film wherein one of a source and drain thereof is electrically connected to the other of the source and drain of said first MOS transistor and the other of the source and drain thereof is coupled to a corresponding one of said first signal lines; a second signal line for transferring said signal electric charges, provided from said first signal lines, to an output terminal of said device; second switch means for transferring said signal electric charge on each first signal line to said second signal line; and scanning means for scanning said first and second switch means in a predetermined sequence.

Claim 3

A solid-state imaging device according to claim 1, wherein said scanning means comprises first scanning means, having outputs coupled respectively in common to gate electrodes of said first MOS transistor and second MOS transistor of each one of said plurality of transfer means through a corresponding first gate line, for simultaneously scanning said first and second MOS transistors of said plurality of transfer means in predetermined sequence, and second scanning means for scanning said second switch means in predetermined sequence.

Claim 4

A solid-state imaging device according to claim 1, wherein said scanning means comprises first scanning means, having outputs coupled respectively in common to a gate electrode of the first MOS transistor of each one of said plurality of transfer means and said second switch means through a corresponding first gate line, for scanning said first MOS transistor of each one of said plurality of transfer means and said second switch means in predetermined sequence, and second scanning means, having outputs coupled respectively to a gate electrode of said second MOS transistor of each one of said plurality of transfer means on a corresponding second gate line, for scanning said second MOS transistor of each of said plurality of transfer means in predetermined sequence.

Claim 5

A solid-state imaging device according to claim 1, wherein each one of said photoelectric conversion elements includes a pn junction comprised of said semiconductor substrate and a first impurity-doped region of a second conductivity type formed in said semiconductor substrate, said first impurity-doped region being formed integrally with said one of a source and drain of said first MOS transistor, wherein said other of the source and drain of said first MOS transistor is comprised of a second impurity-doped region of the second conductivity type formed in said semiconductor substrate, a gate electrode thereof is provided above said semiconductor substrate through part of said insulating film, and wherein said second MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type formed in a semiconductor film of the first conductivity type provided above said semiconductor substrate on said insulating film and a gate electrode thereof provided above said semiconductor film on a different insulating film.

Claim 6

A solid-state imaging device according to claim 4, wherein said other of the source and drain of said first MOS transistor is electrically connected to said one of a source and drain of said second MOS transistor with a metal wiring conductor.

Claim 7

A solid-state imaging device according to claim 5, wherein said second MOS transistor is disposed above an isolation region between pixel regions comprising said photoelectric conversion element and said first MOS transistor.

Claim 8

A solid-state imaging device according to claim 5, wherein said second MOS transistor is disposed above a pixel region comprised of said photoelectric conversion element and said first MOS transistor.

Claim 9

A solid-state imaging device according to claim 6, wherein said other of the source and drain of said second MOS transistor is shared by adjacent two pixels.

Claim 10

A solid-state imaging device according to claim 4, wherein said semiconductor film is prepared using said other of the source and drain of said first MOS transistor as a seeding region, whereby said other of the source and drain of said first MOS transistor is connected directly to said one of a source and drain of said second MOS transistor.

Claim 11

A solid-state imaging device according to claim 9, wherein said second MOS transistor is disposed above an isolation region between pixel regions comprising said photoelectric conversion element and said first MOS transistor.

Claim 12

A solid-state imaging device according to claim 9, wherein the gate electrodes of said first and second MOS transistors are interconnected together to cover said other of the source and drain of said first MOS transistor and said one of a source and drain of said second MOS transistor.

Claim 13

A solid-state imaging device according to claim 1, wherein each one of said photoelectric conversion elements includes a pn junction comprised of said semiconductor substrate and a first impurity-doped region of a second conductivity type formed in said semiconductor substrate, said first impurity-doped region being formed integrally with said one of a source and drain of said first MOS transistor, wherein said other of the source and drain of said first MOS transistor is comprised of a second impurity-doped region of the second conductivity type formed in said semiconductor substrate, a gate electrode thereof is provided above said semiconductor substrate on part of said insulating film, and wherein second MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type which are formed on a semiconductor film of the first conductivity type provided above at least said other of the source and drain and gate electrode of said first MOS transistor on part of said insulating film, the gate electrode of said first MOS transistor being shared by said second MOS transistor as the gate electrode thereof, said semiconductor film being prepared using said other of the source and drain of said first MOS transistor as a seeding region, and said other of the source and drain of said first MOS transistor is connected directly to said one of a source and drain of said second MOS transistor.

Claim 14

A solid-state imaging device according to claim 12 wherein said second MOS transistor is disposed above the region of said first MOS transistor.

Claim 15

A solid-state imaging device according to claim 12, wherein said second MOS transistor is disposed above the region of said other of the source and drain and said gate electrode of said first MOS transistor.

Claim 16

A solid-state imaging device according to claim 1, wherein said second switch means includes a plurality of second transfer means, each one thereof is comprised of a third MOS transistor having one of a source and drain thereof coupled to a respective first signal line and a fourth MOS transistor having one of a source and drain thereof electrically connected to the other of the source and drain of said third MOS transistor and the other of the source and drain thereof being coupled to said second signal line, said third MOS transistor being formed in said semiconductor substrate and said fourth transistor being provided above said semiconductor substrate on said insulating film.

Claim 17

A solid-state imaging device according to claim 15, wherein in each one of said plurality of second transfer means said third MOS transistor has said one and said other of the source and drain thereof respectively comprised of first and second impurity-doped regions of a second conductivity type formed in said semiconductor substrate and a gate electrode thereof provided above said semiconductor substrate on part of said insulating film, and said fourth MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type formed in a semiconductor film of the first conductivity type provided above said semiconductor substrate on said insulating film and a gate electrode thereof provided above said semiconductor film on a different insulating film.

Claim 18

A solid-state imaging device according to claim 16, wherein said other of the source and drain of said third MOS transistor is electrically connected to said one of a source and drain of said fourth MOS transistor with a metal wiring conductor.

Claim 19

A solid-state imaging device according to claim 17, wherein said fourth transistor is disposed above an isolation region.

Claim 20

A solid state imaging device according to claim 16, wherein said fourth MOS transistor is disposed above a region of said semiconductor substrate which includes said third MOS transistor.

Claim 21

A solid-state imaging device according to claim 18, wherein said other of the source and drain of said fourth MOS transistor is common to said other of the source and drain of the fourth MOS transistor of at least two of said plurality of second transfer means.

Claim 22

A solid-state imaging device according to claim 16, wherein said semiconductor film is prepared using said other of the source and drain of said third MOS transistor as a seeding region, and wherein said other of the source and drain of said third MOS transistor is connected directly to said one of a source and drain of said fourth MOS transistor.

Claim 23

A solid-state imaging device according to claim 21, wherein said fourth MOS transistor is disposed above an isolation region.

Claim 24

A solid-state imaging device according to claim 21, wherein the gate electrodes of said third and fourth MOS transistors are interconnected together to cover said other of the source and drain of said third MOS transistor and said one of the source and drain of said fourth MOS transistor.

Claim 25

A solid-state imaging device according to claim 15, wherein in each one of said plurality of second transfer means said third MOS transistor has said one and said other of the source and drain thereof respectively comprised of first and second impurity-doped regions of a second conductivity type which are formed in said semiconductor substrate and a gate electrode thereof provided above said semiconductor substrate on part of said insulating film, and said fourth MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type which are formed in a semiconductor film of the first conductivity type provided above at least other of the source and drain and gate electrode of said third MOS transistor on part of said insulating film, said gate electrode of said third MOS transistor being shared by said fourth MOS transistor as the gate electrode thereof, said semiconductor film being prepared using said other of the source and drain of said third MOS transistor as a seeding region, and said other of the source and drain of said third MOS transistor being connected directly to said one of a source end drain of said fourth MOS transistor.

Claim 26

A solid-state imaging device according to claim 24, wherein said fourth MOS transistor is disposed above a region of said semiconductor substrate which includes said third MOS transistor.

Claim 27

A solid-state imaging device according to claim 24, wherein said fourth MOS transistor is disposed above the region of said other of the source and drain and said gate electrode of said third MOS transistor.

Claim 28

A solid-state imaging device comprising: a plurality of photoelectric conversion elements, arranged in matrix form with a semiconductor substrate of a first conductivity type, for storing signal electric charges in accordance with incident light; first signal lines, arranged in parallel, for transmitting therethrough the signal electric charges stored in respective ones of said photoelectric conversion elements correspondingly coupled therewith and which are arrayed in a predetermined direction; first switch means for respectively effecting a transfer of a signal electric charge stored in each photoelectric conversion element to a corresponding first signal line coupled therewith; a second signal line for transferring said signal electric charges, provided from said first signal lines, to an output terminal of said device; second switch means for transferring said signal electric charge on each first signal line to said second signal line, said second switch means including a plurality of transfer means for coupling said first signal lines to said second signal line, each one of said plurality of transfer means being comprised of a first MOS transistor formed in said semiconductor substrate and having one of a source and drain thereof electrically coupled to a respective one of said first signal lines and a second MOS transistor provided above said semiconductor substrate on an insulating film and having one of a source and drain thereof electrically connected to the other of the source and drain of said first MOS transistor and the other of the source and drain thereof being electrically coupled to said second signal line; and scanning means for scanning said first and second switch means in predetermined sequence.

Claim 29

A solid-state imaging device comprising: a plurality of photoelectric conversion elements, arranged in matrix form with a semiconductor substrate of a first conductivity type, for storing signal electric charges in accordance with incident light; first signal lines, arranged in parallel, for transmitting therethrough the signal electric charges stored in respective ones of said photoelectric conversion elements correspondingly coupled therewith and which are arrayed in a predetermined direction; first switch means for respectively effecting a transfer of a signal electric charge stored in each photoelectric conversion element to a corresponding first signal line coupled therewith; a second signal line for transferring said signal electric charges, provided from said first signal lines, to an output terminal of said device; second switch means for transferring said signal electric charge on each first signal line to said second signal line, said second switch means including a plurality of transfer means for coupling said first signal lines to said second signal line, each one of said plurality of transfer means being comprised of a first MOS transistor formed in said semiconductor substrate and having one of a source and drain thereof electrically coupled to a respective one of said first signal lines and a second MOS transistor provided above said semiconductor substrate on an insulating film and having one of a source and drain thereof electrically connected to the other of the source and drain of said first MOS transistor and the other of the source and drain thereof being electrically coupled to said second signal line; and scanning means for scanning said first and second switch means in predetermined sequence.

Claim 30

A solid-state imaging device according to claim 27, wherein in each one of said plurality of transfer means said first MOS transistor has said one and said other of the source and drain thereof respectively comprised of first and second impurity-doped regions of a second conductivity type formed in said semiconductor substrate and a gate electrode thereof provided above said semiconductor substrate on part of said insulating film, and said second MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type formed in a semiconductor film of the first conductivity type provided above said semiconductor substrate on said insulating film and a gate electrode thereof provided above said semiconductor film on a different insulating film.

Claim 31

A solid-state imaging device according to claim 28, wherein said other of the source and drain of said first MOS transistor is electrically connected to said one of a source and drain of said second MOS transistor with a metal wiring conductor.

Claim 32

A solid-state imaging device according to claim 29, wherein said second MOS transistor is disposed above an isolation region.

Claim 33

A solid-state imaging device according to claim 29, wherein said second MOS transistor is disposed above a region of said semiconductor substrate which includes said first MOS transistor.

Claim 34

A solid-state imaging device according to claim 30, wherein said other of the source and drain of said second MOS transistor is common to said other of the source and drain of the second MOS transistor of at least two of said plurality of transfer means.

Claim 35

A solid-state imaging device according to claim 28, wherein said semiconductor film is prepared using said other of the source and drain of said first MOS transistor as a seeding region, and wherein said other of the source and drain of said first MOS transistor is connected directly to said one of a source and drain of said second MOS transistor.

Claim 36

A solid-state imaging device according to claim 33, wherein said second MOS transistor is disposed above an isolation region.

Claim 37

A solid-state imaging device according to claim 33, wherein the gate electrodes of said first and second MOS transistors are interconnected together to cover said other of the source and drain of said first MOS transistor and said one of a source and drain of said second MOS transistor.

Claim 38

A solid-state imaging device according to claim 1, wherein said one of a source and drain of each first MOS transistor is formed as part of a corresponding photoelectric conversion element.

Claim 39

A solid-state imaging device comprising: a plurality of photoelectric conversion elements, arranged in matrix form within a semiconductor substrate of a first conductivity type, for storing signal electric charges in accordance with incident light; first signal lines, arranged in parallel, for transmitting therethrough the signal electric charges stored in respective ones of said photoelectric conversion elements correspondingly coupled therewith and which are arrayed in a predetermined direction; first switch means for respectively effecting a transfer of a signal electric charge stored in each photoelectric conversion element to a corresponding first signal line coupled therewith, said first switch means including a plurality of first transfer means for coupling said plurality of photoelectric conversion elements to said first signal lines, each one of said plurality of first transfer means is comprised of a first MOS transistor wherein one of a source and drain thereof is correspondingly associated with a respective one of said photoelectric conversion elements and a second MOS transistor wherein one of a source and drain thereof is electrically connected to the other of the source and drain of said first MOS transistor and the other of the source and drain thereof is electrically coupled to a corresponding one of said first signal line; a second signal line for transferring said signal electric charges on said first signal lines to an output terminal of said device; second switch means for transferring said signal electric charge on each one of said first signal lines to said second signal line, said second switch means including a plurality of second transfer means for coupling said first signal lines to said second signal line, each one of said plurality of second transfer means being comprised of a third MOS transistor having one of a source and drain thereof electrically coupled to a corresponding one of said first signal lines and a fourth MOS transistor having one of a source and drain thereof electrically connected to the other of the source and drain of said third MOS transistor and the other of the source and drain thereof being electrically coupled to said second signal line; and scanning means for scanning said first and second switch means in predetermined sequence, wherein at least one of said second and fourth MOS transistors are provided above said semiconductor substrate on an insulating film.

Claim 40

A solid-state imaging device comprising: a plurality of photoelectric conversion elements, arranged in matrix form within a semiconductor substrate of a first conductivity type, for storing signal electric charges in accordance with incident light; first signal lines, arranged in parallel, for transmitting therethrough the signal electric charges stored in respective ones of said photoelectric conversion elements correspondingly coupled therewith and which are arrayed in a predetermined direction; first switch means for respectively effecting a transfer of a signal electric charge stored in each photoelectric conversion element to a corresponding first signal line coupled therewith, said first switch means including a plurality of first transfer means for coupling said plurality of photoelectric conversion elements to said first signal lines, each one of said plurality of first transfer means is comprised of a first MOS transistor wherein one of a source and drain thereof is correspondingly associated with a respective one of said photoelectric conversion elements and a second MOS transistor wherein one of a source and drain thereof is electrically connected to the other of the source and drain of said first MOS transistor and the other of the source and drain thereof is electrically coupled to a corresponding one of said first signal line; a second signal line for transferring said signal electric charges on said first signal lines to an output terminal of said device; second switch means for transferring said signal electric charge on each one of said first signal lines to said second signal line, said second switch means including a plurality of second transfer means for coupling said first signal lines to said second signal line, each one of said plurality of second transfer means being comprised of a third MOS transistor having one of a source and drain thereof electrically coupled to a corresponding one of said first signal lines and a fourth MOS transistor having one of a source and drain thereof electrically connected to the other of the source and drain of said third MOS transistor and the other of the source and drain thereof being electrically coupled to said second signal line; and scanning means for scanning said first and second switch means in predetermined sequence, wherein at least one of said second and fourth MOS transistors are provided above said semiconductor substrate on an insulating film.

Claim 41

A solid-state imaging device according to claim 37, wherein in each one of said plurality of second transfer means said third MOS transistor has said one and said other of the source and drain thereof respectively comprised of first and second impurity-doped regions of a second conductivity type formed in said semiconductor substrate and a gate electrode thereof provided above said semiconductor substrate on part of said insulating film, and said fourth MOS transistor has said one and said other of the source and drain thereof respectively comprised of third and fourth impurity-doped regions of the second conductivity type formed in a semiconductor film of the first conductivity type provided above said semiconductor substrate on said insulating film and a gate electrode thereof provided above said semiconductor film on a different insulating film.

Claim 42

A solid-state imaging device according to claim 38, wherein the other of the source and drain of said third MOS transistor is electrically connected to said one of a source and drain of said fourth MOS transistor with a metal wiring conductor.

Claim 43

A solid-state imaging device according to claim 39, wherein said fourth MOS transistor is disposed above an isolation region.

Claim 44

A solid-state imaging device according to claim 39, wherein said fourth MOS transistor is disposed above a region of said semiconductor substrate which includes said third MOS transistor.

Claim 45

A solid-state imaging device according to claim 40, wherein said other of the source and drain of said fourth MOS transistor is common to said other of the source and drain of the fourth MOS transistor of at least two of said plurality of second transfer means.

Claim 46

A solid-state imaging device according to claim 38, wherein said semiconductor film is prepared using said other of the source and drain of said third MOS transistor as a seeding region, and wherein said other of the source and drain of said third MOS transistor is connected directly to said one of a source and drain of said fourth MOS transistor.

Claim 47

A solid-state imaging device according to claim 43, wherein said fourth MOS transistor is disposed above an isolation region.

Claim 48

A solid-state imaging device according to claim 43, wherein the gate electrodes of said third and fourth MOS transistors are interconnected together to cover said other of the source and drain of said third MOS transistor and said one of a source and drain of said fourth MOS transistor.

Claim 49

A solid-state imaging device according to claim 37, wherein said one of a source and drain of each first MOS transistor is formed as part of a corresponding one of said photoelectric conversion elements.

Claim 50

A solid-state imaging device according to claim 1, wherein said second MOS transistor is formed as a silicon-on-insulator (SOI) type MOS transistor above a surface of said semiconductor substrate on which said plurality of photoelectric conversion elements are formed.

Claim 51

A solid-state imaging device according to claim 27, wherein said second MOS transistor is formed as a silicon-on-insulated (SOI) type MOS transistor above a surface of said semiconductor substrate on which said plurality of photoelectric conversion elements are formed.

Claim 52

A solid-state imaging device according to claim 37, wherein said second and fourth MOS transistors are respectively formed as silicon-on-insulator (SOI) type MOS transistors above a surface of said semiconductor substrate on which said plurality of photoelectric conversion elements are formed.