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US5272355A Expired / Lapsed US ⏱️ 0.0 years remaining

Optoelectronic switching and display device with porous silicon

Assignee: METHODE MASSACHUSETTES (NOW KNOWN AS) LLC
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Filing: 1992-05-20
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Granted: 1993-12-21
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Expires: 2012-05-20
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Abstract

Abstract A solid state optoelectronic switching and display device and a method for its manufacture are disclosed. The device, formed in silicon, essentially is a surface-emitting visible light-emitting diode that allows rapid and efficient switching and information transfer, via optical means, between IC's, PC boards and displays in a computer. The method essentially includes electrochemically etching a silicon wafer to form a porous silicon region therein, depositing a transparent semiconductor layer on the porous silicon region, and forming a back contact on the wafer.

Inventors

  • 👤 Fereydoon Namavar
  • 👤 Nader M. Kalkhoran
  • 👤 H. Paul Maruska

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 03:44
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10H20/8264; H10H20/811

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 46 words
A solid state optoelectronic switching and display device comprising: (a) a silicon substrate having opposed flat surfaces; (b) a porous silicon region formed in said silicon substrate adjacent one of said opposed flat surfaces; and (c) a transparent semiconductor layer formed on said porous silicon region.
Claim 2
Dependent Claim 46 words
A solid state optoelectronic switching and display device comprising: (a) a silicon substrate having opposed flat surfaces; (b) a porous silicon region formed in said silicon substrate adjacent one of said opposed flat surfaces; and (c) a transparent semiconductor layer formed on said porous silicon region.
Claim 3
Dependent Claim 26 words
The solid state device of claim 1 wherein said silicon substrate is formed of p-type silicon and said transparent semiconductor layer is formed of n-type material.
Claim 4
Dependent Claim 60 words
The solid state device of claim 2 wherein said n-type material is one of a group consisting of AlP, GaP, ZnS, ZnSe, CdS, ZnSiP 2 , CdSiP 2 , In 2 O 3 , SnO 2 , ITO (In 2 O 3 +SnO 2 ), ZnO, CdO, Cd 2 SnO 4 , GaInN, GaN, SiC, amorphous Si, and amorphous SiC.
Claim 5
Dependent Claim 26 words
The solid state device of claim 1 wherein said silicon substrate is formed of n-type silicon and said transparent semiconductor layer is formed of p-type material.
Claim 6
Dependent Claim 42 words
The solid state device of claim 5 wherein said p-type material is one of a group consisting of boron-doped diamond, GaN, GaP, AlP, SiC, amorphous Si, amorphous SiC, ZnSe, ZnTe, CuAlS 2 , CuAlSe 2 , CuGaS 2 , ZnGeP 2 .
Claim 7
Dependent Claim 22 words
The solid state device of claim 1 further including a back contact layer formed on the other of said opposed flat surfaces.
Claim 8
Dependent Claim 27 words
The solid state device of claim 1 further including means to forward bias said device, and wherein said device possesses peak power output in the visible spectrum.
Claim 9
Dependent Claim 41 words
The solid state device of claim 1 wherein said silicon substratate is one of a group consisting of (100) and (111) orientation, possessing a resistivity ranging from about 0.001 ohm-cm to about 50 ohms-cm, and a single-crystal silicon alloyed with germanium.
Claim 10
Dependent Claim 29 words
The solid state device of claim 1 wherein said transparent semiconductor wafer possesses an absorption edge at wavelengths shorter than the maximum emission wavelength of said porous silicon region.
Claim 11
Dependent Claim 31 words
The solid state device of claim 6 wherein said silicon substrate is further provided with a more heavily-doped region adjacent said back contact layer than in the remainder of said substrate.

References Cited (Backward Citations)

US4486265A Cited
US4768072A Cited
US4676845A Cited
US5122845A Cited
US5103269A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-12-20 1997-06-21 1997-12-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-12-20 2001-06-21 2001-12-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-12-20 2005-06-21 2005-12-21 $7700.00 Window Closed / Lapsed

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