Patent US5269878A successfully refreshed from Google Patents.
US5269878A
Expired / Lapsed
US
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Metal patterning with dechlorinization in integrated circuit manufacture
Assignee: NXP BV
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Filing: 1992-12-10
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Granted: 1993-12-14
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Expires: 2012-12-10
Abstract
Abstract After a metal deposition is patterned using a plasma etch, the metal pattern is sprayed with steam and water. During the spraying the wafer is rotated to ensure proper distribution and removal of the spray. The spray removes chlorine residue from the etch that might otherwise corrode the metal pattern. After the spray, the spin rate is increased to dry the wafer. The net result is a faster and more effective method for chlorine removal from a plasma-etched metal pattern.
Inventors
- 👤 Allen Page
- 👤 Stacy W. Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:55
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
In the manufacture of an integrated circuit, a method for patterning a metal layer previously deposited on a wafer, said method comprising steps of: selectively protecting areas of a metal layer using photoresist; etching through the unprotected portions of said metal using a chlorine-bearing plasma to define a metal pattern; removing the photoresist over said metal pattern; spraying said metal pattern with steam; and drying said wafer; whereby, corrosion of said metal pattern by chlorine is minimized.
Claim 2
Dependent Claim
77 words
In the manufacture of an integrated circuit, a method for patterning a metal layer previously deposited on a wafer, said method comprising steps of: selectively protecting areas of a metal layer using photoresist; etching through the unprotected portions of said metal using a chlorine-bearing plasma to define a metal pattern; removing the photoresist over said metal pattern; spraying said metal pattern with steam; and drying said wafer; whereby, corrosion of said metal pattern by chlorine is minimized.
Claim 3
Dependent Claim
24 words
A method as recited in claim 1 wherein: during said spraying step, said wafer is spun about an axis orthogonal to said metal pattern.
Claim 4
Dependent Claim
23 words
A method as recited in claim 2 wherein said wafer is spun at different speeds during said drying step and said spraying step.
Claim 5
Dependent Claim
25 words
A method as recited in claim 3 wherein: during said spraying step, said wafer is spun at a speed between 50 rpm and 1000 rpm.
Claim 6
Dependent Claim
25 words
A method as recited in claim 4 wherein: during said drying step, said wafer is spun at a speed between 2000 rpm and 5000 rpm.
Claim 7
Dependent Claim
24 words
A method as recited in claim 1 wherein: during said spraying step, said wafer is sprayed with a mixture of water and said steam.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-13 | 1997-06-14 | 1997-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-13 | 2001-06-14 | 2001-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-13 | 2005-06-14 | 2005-12-14 | $7700.00 | Window Closed / Lapsed |