Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent yield of hillocks on a wiring layer, by forming an aluminum hydrated oxide layer on the surface of the wiring layer comprising aluminum or aluminum alloy and on its basis insulating film. CONSTITUTION:After the formation of a wiring layer 3 comprising aluminum or aluminum alloy, the entire surface undergoes sputter etching. The surface is treated in pure water, which is heated to specified temperature or more, or in steam. Thus, an aluminum hydrated oxide layer 8 is formed on the surface of the wiring layer and on its basis insulating film. The aluminum hydrated oxide layer, which is formed on the wiring layer of the aluminum or the aluminum alloy is very hard. Therefore, growth of abnormal projections yielded on the wiring layer is prevented.

Inventors

• 👤 Shigeru Harada
• 👤 繁 原田
• 👤 Shingo Ikeda
• 👤 池田　慎悟
• 👤 Isao Furuta
• 👤 古田　勲
• 👤 Katsuhiro Hirata
• 👤 勝弘 平田
• 👤 Mitsuyoshi Nakamura
• 👤 充善 中村
• 👤 Takeshi Noguchi
• 👤 武志 野口

Bibliographic Details