US5264389A
Expired / Lapsed
US
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Method of manufacturing a semiconductor laser device
Assignee: Sanyo Electric Co Ltd
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Filing: 1992-06-10
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Granted: 1993-11-23
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Expires: 2012-06-10
Abstract
Abstract A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5° or more from a {100} plane in a <011> direction.
Inventors
- 👤 Hiroki Hamada
- 👤 Shoji Honda
- 👤 Masayuki Shono
- 👤 Takao Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:02
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; B; B82; B82Y; B82Y20/00; H01S2304/00; H01S2304/04; H01S5/20; H01S5/22; H01S5/3202; H01S5/34; H01S5/343; H01S5/34326; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/11; Y10S438/00; Y10S438/973
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
107 words
A method of manufacturing a semiconductor laser device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD.
Claim 2
Independent Claim
107 words
A method of manufacturing a semiconductor laser device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD.
Claim 3
Dependent Claim
27 words
The method of claim 1, further comprising the step of forming a buffer layer between said main surface and said clad layer of the first conductivity type.
Claim 4
Dependent Claim
29 words
The method of claim 1, wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.
Claim 5
Dependent Claim
12 words
The method of claim 1, wherein said active layer further contains Al.
Claim 6
Dependent Claim
47 words
The method of claim 4, wherein said clad layers and said active layer are formed to have a composition of (Al x Ga 1-x ) 0 .5 In 0 .5 P, and the values of x in said clad layer being greater than in said active layers.
Claim 7
Dependent Claim
22 words
The method of claim 5, wherein the value of x in said active layer is in the range of 0.1 to 0.15.
Claim 8
Dependent Claim
13 words
The method of claim 2, wherein said buffer layer is formed by MOCVD.
Claim 9
Dependent Claim
14 words
The method of claim 7, wherein said buffer layer contains Ga, In and P.
Claim 10
Dependent Claim
15 words
The method of claim 2, wherein said buffer layer is of the first conductivity type.
Claim 11
Dependent Claim
31 words
The method of claim 1, further comprising the step of forming a GaAs cap layer of the second conductivity type on said clad layer of the second conductivity type by MOCVD.
Claim 12
Dependent Claim
40 words
The method of claim 10, further comprising the steps of, forming a current blocking layer of SiO 2 on said cap layer by sputtering, and forming a stripe-shaped opening in said blocking layer for enabling passage of current by etching.
Claim 13
Independent Claim
143 words
A method of manufacturing a semiconductor laser device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD, whereby a main wavelength of light emitted from said semiconductor laser device is shorter than that of light emitted from a semiconductor laser device including a GaAs substrate having a main surface of a {100} plane.
Claim 14
Independent Claim
143 words
A method of manufacturing a semiconductor laser device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD, whereby a main wavelength of light emitted from said semiconductor laser device is shorter than that of light emitted from a semiconductor laser device including a GaAs substrate having a main surface of a {100} plane.
Claim 15
Dependent Claim
27 words
The method of claim 12, further comprising the step of forming a buffer layer between said main surface and said clad layer of the first conductivity type.
Claim 16
Dependent Claim
12 words
The method of claim 12, wherein said active layer further contains Al.
Claim 17
Dependent Claim
13 words
The method of claim 13, wherein said buffer layer is formed by MOCVD.
Claim 18
Dependent Claim
14 words
The method of claim 15, wherein said buffer layer contains Ga, In and P.
Claim 19
Independent Claim
108 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD.
Claim 20
Independent Claim
108 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD.
Claim 21
Dependent Claim
27 words
The method of claim 17, further comprising the step of forming a buffer layer between said main surface and said clad layer of the first conductivity type.
Claim 22
Dependent Claim
12 words
The method of claim 17, wherein said active layer further contains Al.
Claim 23
Dependent Claim
13 words
The method of claim 18, wherein said buffer layer is formed by MOCVD.
Claim 24
Dependent Claim
15 words
The method of claim 18, wherein said buffer layer is of the first conductivity type.
Claim 25
Independent Claim
146 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD, whereby a main wavelength of light emitted from said semiconductor light emitting device is shorter than that of light emitted from a semiconductor light emitting device including a GaAs substrate having a main surface of a {100} plane.
Claim 26
Independent Claim
146 words
A method of manufacturing a semiconductor light emitting device comprising the steps of: forming a main surface of a GaAs substrate of a first conductivity type, inclined by at least about 5° from a {100} plane of said substrate in a <011> direction, forming a clad layer of the first conductivity type containing Al, Ga, In and P on said main surface by MOCVD, forming an active layer containing at least Ga, In and P on said clad layer of the first conductivity type by MOCVD, and forming a clad layer of a second conductivity type containing Al, Ga, In and P on said active layer by MOCVD, whereby a main wavelength of light emitted from said semiconductor light emitting device is shorter than that of light emitted from a semiconductor light emitting device including a GaAs substrate having a main surface of a {100} plane.
Claim 27
Dependent Claim
27 words
The method of claim 22, further comprising the step of forming a buffer layer between said main surface and said clad layer of the first conductivity type.
Claim 28
Dependent Claim
12 words
The method of claim 22, wherein said active layer further contains Al.
Claim 29
Dependent Claim
13 words
The method of claim 23, wherein said buffer layer is formed by MOCVD.
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| 3.5 Years (Year 4) | 1996-11-22 | 1997-05-24 | 1997-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-22 | 2001-05-24 | 2001-11-23 | $3760.00 | Window Closed / Lapsed |
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