Patent US5263040A successfully refreshed from Google Patents.
US5263040A
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Strained quantum well laser diode
Assignee: Eastman Kodak Co
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Filing: 1992-06-22
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Granted: 1993-11-16
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Expires: 2012-06-22
Abstract
Abstract A strained quantum well laser diode in which higher reliability is achieved by reducing the degrading effects of stress. By using an active layer orientation that is equal or close to (111), it is possible to suppress degradation caused by stress, which acts in a direction parallel to the quantum well layer.
Inventors
- 👤 Toshiro Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/32; H01S5/3403; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
81 words
In a strained quantum well laser diode having a strained quantum well active layer and a plurality of layers on either side of the active layer, the improvement comprising: wherein there is a difference of 0.1% or more between the lattice constant of the quantum well active layer and the lattice constant of layers adjacent to the quantum well active layer, and the quantum well active layer has a crystal orientation that is within ±10 degrees of the (111) surface plane.
Claim 2
Dependent Claim
81 words
In a strained quantum well laser diode having a strained quantum well active layer and a plurality of layers on either side of the active layer, the improvement comprising: wherein there is a difference of 0.1% or more between the lattice constant of the quantum well active layer and the lattice constant of layers adjacent to the quantum well active layer, and the quantum well active layer has a crystal orientation that is within ±10 degrees of the (111) surface plane.
Claim 3
Dependent Claim
30 words
The quantum well laser diode of claim 1 wherein the active layer is a non-doped quantum well layer made of InGaAs and having a thickness of 20 nm or less.
Claim 4
Dependent Claim
23 words
The quantum well laser diode of claim 1 wherein the active layer is selected from the group consisting of InGaAsAs, InGaAlAs and InGaAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |