Gate controlled Schottky barrier diode

Claim 2

A semiconductor device which functions as a Schottky barrier diode (SBD) when the device is forward biased and as a regular P-N junction diode when the device is reverse biased, comprising: a substrate of heavily doped low-resistivity N + Si upon which is epitaxially grown a layer of lightly doped N-epi Si; a cathode contacted with the N + substrate; a P-type dopant material implanted in an anode region of said N-epi layer to provide an anode; an N-type doping material implanted on the surface of the P-type implanted anode region, the N-type material forming an N-type channel layer; a thin gate dielectric layer formed over the entire surface of the N-epi layer, the thin gate dielectric layer and the N-type channel layer having an anode contact window formed therein above the anode region; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having an anode region window formed therein above the anode region, the anode region window being larger than the anode contact window; a layer of conductive material deposited on an anode contact region defined by the anode contact window, the conductive material forming a Schottky barrier diode with the N-type channel layer and an ohmic contact to the anode; and electrode metal filling the anode region window for providing an electrical connector thereto, whereby a positive forward bias voltage applied to the anode gates the device "on" to provide a Schottky barrier diode at the interface of the conductive material layer and the N-type channel layer sandwiched between a portion of the P-type implanted material and the gate dielectric layer, and whereby a negative reverse bias voltage applied to the anode gates the device "off" to provide a P-N junction characteristic of a regular semiconductor diode.

Claim 3

The semiconductor device recited in claim 1, wherein said N-type channel layer is of a thickness of about 500Å.

Claim 4

The semiconductor device recited in claim 1 further wherein said thin gate dielectric layer comprises a thin oxide layer having a thickness of about 500Å and further having a nitride layer of a thickness of about 100Å deposited thereon.

Claim 5

The semiconductor device recited in claim 1 further wherein said thick dielectric layer comprises a thick layer of chemical vapor deposited TEOS (Tetra-Ethyl-Ortho-Silicate) layer of a thickness of about 3000Å and further having a nitride layer of a thickness of about 1000Å deposited thereon.

Claim 6

The semiconductor device recited in claim 1, wherein said layer of conductive material comprises silicide.

Claim 7

The semiconductor device recited in claim 1, wherein said layer of conductive material comprises metal.

Claim 8

The semiconductor device recited in claim 1, further wherein said cathode comprises N + material implanted or diffused completely through a cathode region of said N-epi layer, the diffused N + material making intimate contact with the N + substrate.

Claim 9

A semiconductor device having a gate and which functions as a Schottky barrier diode (SBD) when the gate is forward biased and as a regular P-N junction diode when the gate is reverse biased, said device comprising: a substrate of heavily doped low-resistivity N + Si upon which is epitaxially grown a layer of lightly doped N-epi Si; a cathode contacted with the N + substrate; a P-type dopant material implanted in an anode region of said N-epi layer to provide an anode; an N-type doping material implanted on the surface of the P-type implanted anode region, the N-type material forming an N-type channel layer; a thin gate dielectric layer formed over the entire surface of the N-epi layer, the thin gate dielectric layer and the N-type channel layer having an anode contact window formed therein above the anode region; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having an anode region window formed therein above the anode region, the anode region window being larger than the anode contact window; a polysilicon layer formed over the entire top surface of the device and having a corresponding anode contact window formed therein; a dielectric layer formed on said polysilicon layer for completely covering the exposed surface of the polysilicon layer, the dielectric layer further having a gate contact window formed therein and located away from the anode contact window; a first layer of conductive material deposited on said polysilicon layer through the gate contact window to provide a gate contact; a second layer of conductive material deposited on an anode contact region defined by the anode contact window, the conductive material forming a Schottky barrier diode with the N-type channel layer and an ohmic contact to the anode; and electrode metal filling the anode region window for providing an electrical connector to the anode, whereby a positive forward bias voltage applied to the gate switches the device "on" to provide a Schottky barrier diode at the interface of the second conductive material layer and the N-type channel layer sandwiched between a portion of the P-type implanted material and the gate dielectric layer, and whereby a negative reverse bias voltage applied to the gate switches the device "off" to provide a P-N junction characteristic of a regular semiconductor diode.

Claim 10

A semiconductor device having a gate and which functions as a Schottky barrier diode (SBD) when the gate is forward biased and as a regular P-N junction diode when the gate is reverse biased, said device comprising: a substrate of heavily doped low-resistivity N + Si upon which is epitaxially grown a layer of lightly doped N-epi Si; a cathode contacted with the N + substrate; a P-type dopant material implanted in an anode region of said N-epi layer to provide an anode; an N-type doping material implanted on the surface of the P-type implanted anode region, the N-type material forming an N-type channel layer; a thin gate dielectric layer formed over the entire surface of the N-epi layer, the thin gate dielectric layer and the N-type channel layer having an anode contact window formed therein above the anode region; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having an anode region window formed therein above the anode region, the anode region window being larger than the anode contact window; a polysilicon layer formed over the entire top surface of the device and having a corresponding anode contact window formed therein; a dielectric layer formed on said polysilicon layer for completely covering the exposed surface of the polysilicon layer, the dielectric layer further having a gate contact window formed therein and located away from the anode contact window; a first layer of conductive material deposited on said polysilicon layer through the gate contact window to provide a gate contact; a second layer of conductive material deposited on an anode contact region defined by the anode contact window, the conductive material forming a Schottky barrier diode with the N-type channel layer and an ohmic contact to the anode; and electrode metal filling the anode region window for providing an electrical connector to the anode, whereby a positive forward bias voltage applied to the gate switches the device "on" to provide a Schottky barrier diode at the interface of the second conductive material layer and the N-type channel layer sandwiched between a portion of the P-type implanted material and the gate dielectric layer, and whereby a negative reverse bias voltage applied to the gate switches the device "off" to provide a P-N junction characteristic of a regular semiconductor diode.

Claim 11

The semiconductor device recited in claim 8, wherein said N-type channel layer is of a thickness of about 500Å.

Claim 12

The semiconductor device recited in claim 8 further wherein said thin gate dielectric layer comprises a thin oxide layer having a thickness of about 500Å and further having a nitride layer of a thickness of about 100Å deposited thereon.

Claim 13

The semiconductor device recited in claim 8 further wherein said thick dielectric layer comprises a thick layer of chemical vapor deposited TEOS (Tetra-Ethyl-Ortho-Silicate) layer of a thickness of about 3000Å and further having a nitride layer of a thickness of about 1000Å deposited thereon.

Claim 14

The semiconductor device recited in claim 8, wherein said second layer of conductive material comprises silicide.

Claim 15

The semiconductor device recited in claim 8, wherein said second layer of conductive material comprises metal.

Claim 16

The semiconductor device recited in claim 8, further wherein said cathode comprises N + material implanted or diffused completely through a cathode region of said N-epi layer, the diffused N + material making intimate contact with the N + substrate.

Claim 17

A gated diode structure, comprising: a subcollector of N + material; an N-type epitaxial layer on a top surface of said N + material; an N-type doping material implanted or diffused through a cathode window to form are N-type cathode extending through said N epitaxial layer to said N + subcollector; a P-type doping material implanted into said N-type epitaxial layer through an anode window to form a P-type anode; an N-type doping material implanted in said P-type anode to form a channel; a thin gate dielectric layer on top of said N-type epitaxial layer, the thin gate dielectric having a cathode window therein, and further the thin gate dielectric layer and the N-type channel having an anode contact window formed therein; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having corresponding anode and cathode windows formed therein, the anode window of said thick dielectric layer further being larger than the anode contact window; a silicide layer deposited on a cathode contact region defined by the cathode window, said silicide layer further being deposited on an anode contact region defined by the anode contact window, the silicide on the anode forming a Schottky barrier diode with the channel and an ohmic contact to the anode; and metal contacts provided to take contact with said silicide layer within said cathode window and said anode contact window, the contact in the anode window together with the thin dielectric layer forming a gate for switching the N-type channel, whereby a forward bias produces Schottky-barrier diode characteristic and a reverse bias produces a P-N junction diode characteristic.

Claim 18

A gated diode structure, comprising: a subcollector of N + material; an N-type epitaxial layer on a top surface of said N + material; an N-type doping material implanted or diffused through a cathode window to form are N-type cathode extending through said N epitaxial layer to said N + subcollector; a P-type doping material implanted into said N-type epitaxial layer through an anode window to form a P-type anode; an N-type doping material implanted in said P-type anode to form a channel; a thin gate dielectric layer on top of said N-type epitaxial layer, the thin gate dielectric having a cathode window therein, and further the thin gate dielectric layer and the N-type channel having an anode contact window formed therein; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having corresponding anode and cathode windows formed therein, the anode window of said thick dielectric layer further being larger than the anode contact window; a silicide layer deposited on a cathode contact region defined by the cathode window, said silicide layer further being deposited on an anode contact region defined by the anode contact window, the silicide on the anode forming a Schottky barrier diode with the channel and an ohmic contact to the anode; and metal contacts provided to take contact with said silicide layer within said cathode window and said anode contact window, the contact in the anode window together with the thin dielectric layer forming a gate for switching the N-type channel, whereby a forward bias produces Schottky-barrier diode characteristic and a reverse bias produces a P-N junction diode characteristic.

Claim 19

A gated diode structure, comprising: a subcollector of N + material; an N-type epitaxial layer on a top surface of said N + material; an N-type doping material implanted or diffused through a cathode window to form an N-type cathode extending through said N epitaxial layer to said N + subcollector; a P-type doping material implanted into said N-type epitaxial layer through an anode window to form a P-type anode; an N-type doping material implanted in said P-type anode to form a channel; a thin gate dielectric layer on top of said N-type epitaxial layer, the thin gate dielectric having a cathode window therein, and further the thin gate dielectric layer and the N-type channel having an anode contact window formed therein; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having corresponding anode and cathode windows formed therein, the anode window of said thick dielectric layer further larger than the anode contact window; a polysilicon layer formed over the entire top surface of the structure and having corresponding anode and cathode windows formed therein; a dielectric layer formed on said polysilicon layer for completely covering the exposed surface of the polysilicon layer, the dielectric layer further having a gate contact window formed therein and located away from the anode contact window; a silicide layer deposited on contact regions defined by the cathode window, the anode contact window, and the gate contact window, respectively, said silicide layer on the anode forming a Schottky barrier diode with the channel and an ohmic contact to the anode; and metal contacts provided to take contact with said silicide layer within the cathode, anode contact, and gate contact windows, whereby a positive forward bias voltage applied to the gate switches the device "on" to provide a Schottky barrier diode characteristic and a negative reverse bias voltage applied to the gate switches the device "off" to provide a P-N junction diode chararteristic.

Claim 20

A gated diode structure, comprising: a subcollector of N + material; an N-type epitaxial layer on a top surface of said N + material; an N-type doping material implanted or diffused through a cathode window to form an N-type cathode extending through said N epitaxial layer to said N + subcollector; a P-type doping material implanted into said N-type epitaxial layer through an anode window to form a P-type anode; an N-type doping material implanted in said P-type anode to form a channel; a thin gate dielectric layer on top of said N-type epitaxial layer, the thin gate dielectric having a cathode window therein, and further the thin gate dielectric layer and the N-type channel having an anode contact window formed therein; a thick dielectric layer formed over the top surface of the thin gate dielectric layer, the thick dielectric layer having corresponding anode and cathode windows formed therein, the anode window of said thick dielectric layer further larger than the anode contact window; a polysilicon layer formed over the entire top surface of the structure and having corresponding anode and cathode windows formed therein; a dielectric layer formed on said polysilicon layer for completely covering the exposed surface of the polysilicon layer, the dielectric layer further having a gate contact window formed therein and located away from the anode contact window; a silicide layer deposited on contact regions defined by the cathode window, the anode contact window, and the gate contact window, respectively, said silicide layer on the anode forming a Schottky barrier diode with the channel and an ohmic contact to the anode; and metal contacts provided to take contact with said silicide layer within the cathode, anode contact, and gate contact windows, whereby a positive forward bias voltage applied to the gate switches the device "on" to provide a Schottky barrier diode characteristic and a negative reverse bias voltage applied to the gate switches the device "off" to provide a P-N junction diode chararteristic.