Solid-state imaging device with anti-reflective layers of amorphous silicon and insulating silicon

Claim 2

A solid-state imaging device comprising: a semiconductor substrate having a plurality of optoelectrical conversion regions on a major surface of the substrate; an insulating layer on said surface of the substrate; a light shielding layer on said insulating layer, said light shielding layer having a plurality of holes respectively aligned with said optoelectrical conversion regions; and an anti-reflection layer comprising an underlying silicon insulating layer on said light shielding layer and an overlying amorphous silicon layer on said underlying silicon insulating layer, said underlying silicon insulating layer and said overlying amorphous silicon layer producing destructive light interference for reducing light reflecting off said light shielding layer.

Claim 3

A solid-state imaging device as claimed in claim 1, wherein said underlying silicon insulating layer has a thickness of 1000 Å and said overlying amorphous silicon layer has a thickness of 300 Å.

Claim 4

A solid-state imaging device as claimed in claim 1, wherein said underlying silicon insulating layer has a thickness greater than the thickness of said overlying amorphous silicon layer.

Claim 5

A solid-state color imaging device comprising: a semiconductor substrate having a plurality of optoelectrical conversion regions on a major surface of the substrate; an insulating layer on the major surface of the substrate; a light shielding layer on said insulating layer, said light shielding layer having a plurality of holes respectively aligned with said optoelectrical conversion regions; an anti-reflection layer comprising an underlying silicon insulating layer on said light shielding layer and an overlying amorphous silicon layer on said underlying silicon insulating layer, said underlying silicon insulating layer and said overlying amorphous silicon layer producing destructive light interference for reducing light reflected from the light shielding layer; a color anti-blending layer on said light reflecting layer; and a color dyeing layer on said color anti-blending layer, said color dyeing layer having an array of color filtering regions in positions corresponding to said optoelectrical conversion regions.

Claim 6

A solid-state color imaging device comprising: a semiconductor substrate having a plurality of optoelectrical conversion regions on a major surface of the substrate; an insulating layer on the major surface of the substrate; a light shielding layer on said insulating layer, said light shielding layer having a plurality of holes respectively aligned with said optoelectrical conversion regions; an anti-reflection layer comprising an underlying silicon insulating layer on said light shielding layer and an overlying amorphous silicon layer on said underlying silicon insulating layer, said underlying silicon insulating layer and said overlying amorphous silicon layer producing destructive light interference for reducing light reflected from the light shielding layer; a color anti-blending layer on said light reflecting layer; and a color dyeing layer on said color anti-blending layer, said color dyeing layer having an array of color filtering regions in positions corresponding to said optoelectrical conversion regions.

Claim 7

A solid-state imaging device as claimed in claim 4, wherein said underlying silicon insulating layer has a thickness of 1000 Å and said overlying amorphous silicon layer has a thickness of 300 Å.

Claim 8

A solid-state color imaging device as claimed in claim 5, wherein said underlying silicon insulating layer has a thickness greater than the thickness of said overlying amorphous silicon layer.