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Patent US5254499A successfully refreshed from Google Patents.
US5254499A
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Method of depositing high density titanium nitride films on semiconductor wafers
Assignee: Micron Technology Inc
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Filing: 1992-07-14
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Granted: 1993-10-19
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Expires: 2012-07-14
Abstract
Abstract Disclosed is a chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer. The method comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) heating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C.; c) injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and d) maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which comprises TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure. Preferably and typically, the resultant film will consist essentially of TiN, with the film having in excess of 99% TiN by volume.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung T. Doan
- 👤 Scott G. Meikle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:18
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
180 words
A chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer, the method comprising the following steps: positioning a wafer within a chemical vapor deposition reactor; heating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C.; injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which comprises TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure.
Claim 2
Dependent Claim
180 words
A chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer, the method comprising the following steps: positioning a wafer within a chemical vapor deposition reactor; heating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C.; injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which comprises TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure.
Claim 3
Dependent Claim
20 words
The chemical vapor deposition method of claim 1 wherein the pressure is from about 15 Torr to about 50 Torr.
Claim 4
Dependent Claim
15 words
The chemical vapor deposition method of claim 1 wherein the pressure is about 30 Torr.
Claim 5
Dependent Claim
21 words
The chemical vapor deposition method of claim 1 wherein the selected temperature is from about 400° C. to about 500° C.
Claim 6
Dependent Claim
33 words
The chemical vapor deposition method of claim 1 wherein the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
Claim 7
Dependent Claim
31 words
The chemical vapor deposition method of claim 1 wherein the quantities of gases are selected to provide a volumetric ratio of titanium organometallic precursor to ammonia of from 1:50 to 1:5.
Claim 8
Dependent Claim
32 words
The chemical vapor deposition method of claim 1 wherein the carrier gas comprises at least one noble gas, the quantity of carrier gas being from about 20 sccm to about 200 sccm.
Claim 9
Dependent Claim
23 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 .
Claim 10
Dependent Claim
35 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 , and the pressure is from about 15 Torr to about 50 Torr.
Claim 11
Dependent Claim
47 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 , the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
Claim 12
Dependent Claim
25 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 .
Claim 13
Dependent Claim
37 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 , and the pressure is from about 15 Torr to about 50 Torr.
Claim 14
Dependent Claim
49 words
The chemical vapor deposition method of claim 1 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 , the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
Claim 15
Dependent Claim
182 words
A chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer, the method comprising the following steps: positioning a wafer within a chemical vapor deposition reactor; heating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C.; injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which consists essentially of TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure.
Claim 16
Dependent Claim
182 words
A chemical vapor deposition method of providing a conformal layer of TiN atop a semiconductor wafer in a manner which increases density and reduces etch rate of the TiN layer, the method comprising the following steps: positioning a wafer within a chemical vapor deposition reactor; heating the positioned wafer to a selected processing temperature of from about 200° C. to about 600° C.; injecting selected quantities of a gaseous titanium organometallic precursor of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of H and a carbon containing radical; gaseous ammonia; and a carrier gas to within the reactor having the positioned preheated wafer therein; and maintaining the reactor at a pressure of from about 5 Torr to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reacting the precursor and ammonia to deposit a film on the wafer which consists essentially of TiN, the film having increased density and reduced etch rate over films deposited by the same method but at lower than about 5 Torr pressure.
Claim 17
Dependent Claim
20 words
The chemical vapor deposition method of claim 14 wherein the pressure is from about 15 Torr to about 50 Torr.
Claim 18
Dependent Claim
15 words
The chemical vapor deposition method of claim 14 wherein the pressure is about 30 Torr.
Claim 19
Dependent Claim
21 words
The chemical vapor deposition method of claim 14 wherein the selected temperature is from about 400° C. to about 500° C.
Claim 20
Dependent Claim
33 words
The chemical vapor deposition method of claim 14 wherein the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
Claim 21
Dependent Claim
31 words
The chemical vapor deposition method of claim 14 wherein the quantities of gases are selected to provide a volumetric ratio of titanium organometallic precursor to ammonia of from 1:50 to 1:5.
Claim 22
Dependent Claim
23 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 .
Claim 23
Dependent Claim
35 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 , and the pressure is from about 15 Torr to about 50 Torr.
Claim 24
Dependent Claim
47 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(CH 3 ) 2 ) 4 , the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
Claim 25
Dependent Claim
25 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 .
Claim 26
Dependent Claim
37 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 , and the pressure is from about 15 Torr to about 50 Torr.
Claim 27
Dependent Claim
49 words
The chemical vapor deposition method of claim 14 wherein the titanium organometallic precursor consists essentially of Ti(N(C 2 H 5 ) 2 ) 4 , the pressure is from about 15 Torr to about 50 Torr, and the selected temperature is from about 400° C. to about 500° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-18 | 2001-04-19 | 2001-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-18 | 2005-04-19 | 2005-10-19 | $7700.00 | Window Closed / Lapsed |