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US5254208A
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US
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Method for manufacturing a semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-07-15
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Granted: 1993-10-19
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Expires: 2011-07-15
Abstract
Abstract A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
Inventors
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/00; H10D86/01; H10D86/021; H10D86/0212; H10D86/0221; H10D86/0223; H10D86/40; H10D86/411; H10D86/60; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
73 words
In a method for manufacturing a semiconductor device comprising the steps of forming a non-single crystal semiconductor layer on a glass substrate and crystallizing said non-single crystal semiconductor layer, the improvement comprising: heating said glass substrate at a temperature not higher than strain point of said glass substrate before forming said non-single crystal semiconductor layer in an atmosphere comprising a gas selected from the group consisting of hydrogen gas and carbon monoxide gas;.
Claim 2
Dependent Claim
73 words
In a method for manufacturing a semiconductor device comprising the steps of forming a non-single crystal semiconductor layer on a glass substrate and crystallizing said non-single crystal semiconductor layer, the improvement comprising: heating said glass substrate at a temperature not higher than strain point of said glass substrate before forming said non-single crystal semiconductor layer in an atmosphere comprising a gas selected from the group consisting of hydrogen gas and carbon monoxide gas;.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said atmosphere further includes a nitrogen gas.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein said crystallizing step is carried out in an atmosphere comprising at least one of an inactive gas, nitrogen, hydrogen, and carbon monoxide.
Claim 5
Dependent Claim
70 words
In a method for manufacturing a semiconductor device comprising the steps of forming a non-single crystalline semiconductor layer on a glass substrate and crystallizing said non-single crystalline semiconductor layer at a temperature from 400° C. to 800° C., the improvement comprising: heating said glass substrate before forming said non-single crystal semiconductor layer in an atmosphere comprising a gas selected from the group consisting of hydrogen gas or carbon monoxide gas
Claim 6
Dependent Claim
70 words
In a method for manufacturing a semiconductor device comprising the steps of forming a non-single crystalline semiconductor layer on a glass substrate and crystallizing said non-single crystalline semiconductor layer at a temperature from 400° C. to 800° C., the improvement comprising: heating said glass substrate before forming said non-single crystal semiconductor layer in an atmosphere comprising a gas selected from the group consisting of hydrogen gas or carbon monoxide gas
Claim 7
Dependent Claim
13 words
The method of claim 4 wherein said atmosphere further includes a nitrogen gas.
Claim 8
Dependent Claim
27 words
The method of claim 4 wherein said crystallizing step is carried out in an atmosphere comprising at least one of an inactive gas, nitrogen, and carbon monoxide.
Claim 9
Dependent Claim
11 words
The method of claim 4 wherein said inactive gas comprises argon.
Claim 10
Independent Claim
35 words
The method of claims 1 or 4 wherein a silicon compound layer is formed on said glass substrate either before or after said preheating the glass substrate but before forming said non-single crystal semiconductor layer.
Claim 11
Dependent Claim
28 words
The method of claim 8 wherein said silicon compound layer comprises a compound selected from the group consisting of silicon oxide silicon nitride, silicon carbide, and silicon oxynitride.
Claim 12
Dependent Claim
61 words
In a method for manufacturing a semiconductor device on a glass substrate comprising at least a non-single crystal semiconductor layer, the improvement comprising preheating said glass substrate in an atmosphere comprising at least hydrogen or carbon monoxide before forming said non-single crystal semiconductor layer in order to minimize the thermal contraction of said substrate during the formation of said semiconductor layer.
Claim 13
Dependent Claim
61 words
In a method for manufacturing a semiconductor device on a glass substrate comprising at least a non-single crystal semiconductor layer, the improvement comprising preheating said glass substrate in an atmosphere comprising at least hydrogen or carbon monoxide before forming said non-single crystal semiconductor layer in order to minimize the thermal contraction of said substrate during the formation of said semiconductor layer.
Claim 14
Dependent Claim
30 words
The method of claim 10 wherein said non-single crystal semiconductor is formed by depositing a non-single crystal semiconductor layer by a vapor deposition method and crystallizing said layer by heating.
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| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
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