Production of polycrystalline silicon

Abstract

Abstract PURPOSE:To obtain polycrystalline silicon useful for an integrated circuit, etc., and as the material of an FET switch fitted to each picture element of a display device, etc., by depositing silicon by DC sputtering or high frequency sputtering in an atmosphere of silicon hydride or silicon chloride. CONSTITUTION:A silicon target 2, a silicon substrate 6 and a heater 5 are arranged in a vacuum chamber 1 and this chamber 1 is evacuated preferably to (1X10<-6>Torr degree of vacuum. The substrate 6 is heated to a prescribed temp., silicon hydride such as SiH4 or silicon chloride such as SiCl4 and gaseous Ar 3 are introduced into the chamber 1 and DC sputtering or high frequency sputtering is carried out.

Inventors

• 👤 Keisuke Tsuda
• 👤 津田　圭介
• 👤 Isako Kikuchi
• 👤 菊池　伊佐子
• 👤 Hiroshi Yamazoe
• 👤 山添　博司
• 👤 Isao Ota
• 👤 勲夫 太田

Bibliographic Details