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US5252518A
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Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane
Assignee: Micron Technology Inc
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Filing: 1992-03-03
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Granted: 1993-10-12
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Expires: 2012-03-03
Abstract
Abstract A LPCVD method for depositing a film of TiN on a semiconductor structure includes reacting an organometallic titanium source gas such as TMAT and organic silane as a reactive gas. The deposited film is a mixed phase of TiN and TiSi 2 and is characterized by a low contact resistance, good step coverage and good barrier properties. The reaction is preferably carried out in a cold wall CVD reactor at relatively low temperatures (i.e. 200° C.) and at pressures of from about 0.05 to 30 Torr.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Trung T. Doan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W20/01; H10W20/031; H10W20/064; H10W20/066; Y; Y10; Y10S; Y10S148/00; Y10S148/147; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
94 words
A method of forming a mixed phase TiN/TiSi x layer in the fabrication of a semiconductor device, comprising the steps of: a. providing a semiconductor device under fabrication; b. placing the device in a vacuum chamber; c. applying a stream of a titanium source gas formed of an organometallic precursor within the vacuum chamber; and d. applying a stream of an organic silane reactive gas within the vacuum chamber; such that the titanium source gas and the silane reactive gas combine and deposit a film of mixed phase TiN+TiSi x on the semiconductor device.
Claim 2
Independent Claim
94 words
A method of forming a mixed phase TiN/TiSi x layer in the fabrication of a semiconductor device, comprising the steps of: a. providing a semiconductor device under fabrication; b. placing the device in a vacuum chamber; c. applying a stream of a titanium source gas formed of an organometallic precursor within the vacuum chamber; and d. applying a stream of an organic silane reactive gas within the vacuum chamber; such that the titanium source gas and the silane reactive gas combine and deposit a film of mixed phase TiN+TiSi x on the semiconductor device.
Claim 3
Dependent Claim
16 words
The method as recited in claim 1 and wherein: the organometallic precursor is tetrakisdimethyl-amino titanium (TMAT).
Claim 4
Dependent Claim
17 words
The method as recited in claim 2 and wherein: the organic silane reactive gas is Tris(Dimethylamino)Silane (SIN).
Claim 5
Dependent Claim
36 words
The method as recited in claim 1 and further comprising: applying a carrier inert gas at a flow rate to control a gas distribution above the semiconductor device to control a uniformity of the deposited film.
Claim 6
Dependent Claim
22 words
The method as recited in claim 1 and wherein: the pressure in the vacuum chamber is between about 0.1 to 10 Torr.
Claim 7
Dependent Claim
22 words
The method as recited in claim 1 and wherein: a temperature in the vacuum chamber is between 40° C. to 500° C.
Claim 8
Dependent Claim
75 words
In semiconductor manufacture, an LPCVD method for depositing a mixed phase TiN/TiSi 2 film on a substrate comprising the steps of: a. placing the substrate in a vacuum chamber; b. combining an organometallic titanium source gas, a carrier gas and an organic silane reactive gas for a time period between about 20 seconds to about 5 minutes in the vacuum chamber to form and deposit a film of a TiN/TiSi 2 mixture on the substrate.
Claim 9
Dependent Claim
75 words
In semiconductor manufacture, an LPCVD method for depositing a mixed phase TiN/TiSi 2 film on a substrate comprising the steps of: a. placing the substrate in a vacuum chamber; b. combining an organometallic titanium source gas, a carrier gas and an organic silane reactive gas for a time period between about 20 seconds to about 5 minutes in the vacuum chamber to form and deposit a film of a TiN/TiSi 2 mixture on the substrate.
Claim 10
Dependent Claim
27 words
The method as recited in claim 7 and wherein: the organometallic titanium source gas is tetrakis-dimethyl-amino titanium (TMAT); and the organic silane reactive gas is Tris(Dimethylamino)Silane (SIN).
Claim 11
Dependent Claim
23 words
The method as recited in claim 8 and wherein: the carrier gas is selected from the group consisting of Hydrogen, Argon or Nitrogen.
Claim 12
Dependent Claim
48 words
The method as recited in claim 8 and wherein: a flow rate of the TMAT is about 3 to 200 sccm; a flow rate of the SIN is about 3 to 200 sccm; and a flow rate of the inert carrier gas is about 10 to 5000 sccm.
Claim 13
Dependent Claim
21 words
The method as recited in claim 10 and wherein: a pressure in the vacuum chamber is about 0.05 to 30 Torr.
Claim 14
Dependent Claim
22 words
The method as recited in claim 11 and wherein: a temperature in the vacuum chamber is from about 40° to 500° C.
Claim 15
Dependent Claim
126 words
In a semiconductor manufacturing process a LPCVD method of depositing a mixed phase TiN/TiSi 2 film on a substrate comprising the steps of: a. placing the substrate in a vacuum chamber at a pressure of from about 0.05 to 30 Torr; b. adjusting the temperature of the substrate to about 40° C. to 350° C.; c. applying a stream of an organometallic source gas of tetrakis-dimethyl-amino titanium (TMAT) within the vacuum chamber; d. applying a stream of an organic silane reactive gas of Tris(Dimethylamino)Silane (SIN) within the vacuum chamber; e. combining the source gas and reactive gas to form a mixed phase TiN/TiSi 2 film on the substrate; and f. controlling a uniformity of the film with a flow of carrier gas within the vacuum chamber.
Claim 16
Dependent Claim
126 words
In a semiconductor manufacturing process a LPCVD method of depositing a mixed phase TiN/TiSi 2 film on a substrate comprising the steps of: a. placing the substrate in a vacuum chamber at a pressure of from about 0.05 to 30 Torr; b. adjusting the temperature of the substrate to about 40° C. to 350° C.; c. applying a stream of an organometallic source gas of tetrakis-dimethyl-amino titanium (TMAT) within the vacuum chamber; d. applying a stream of an organic silane reactive gas of Tris(Dimethylamino)Silane (SIN) within the vacuum chamber; e. combining the source gas and reactive gas to form a mixed phase TiN/TiSi 2 film on the substrate; and f. controlling a uniformity of the film with a flow of carrier gas within the vacuum chamber.
Claim 17
Dependent Claim
9 words
The method as recited in claim 13 and wherein:
Claim 18
Independent Claim
11 words
the method is carried out in a cold wall CVD reactor.
Claim 19
Independent Claim
11 words
the method is carried out in a cold wall CVD reactor.
Claim 20
Dependent Claim
35 words
The method as recited in claim 14 and wherein: the stream of TMAT is about 10 sccm; the stream of SIN is about 20 sccm; and the stream of inert gas is about 50 sccm.
Claim 21
Dependent Claim
25 words
The method as recited in claim 15 and wherein: the deposited film is formed mostly of TiN and a small quantity of TiSi 2 .
Claim 22
Dependent Claim
19 words
The method as recited in claim 16 and wherein: the TiN/TiSi 2 film is deposited on a silicon substrate.
Claim 23
Dependent Claim
20 words
The method as recited in claim 17 and wherein: the TiN/TiSi 2 film is deposited on a SiO 2 substrate.
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US4784973A
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US4851369A
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-11 | 1997-04-12 | 1997-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-11 | 2001-04-12 | 2001-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-11 | 2005-04-12 | 2005-10-12 | $7700.00 | Window Closed / Lapsed |