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US5250847A Expired / Lapsed US ⏱️ 0.0 years remaining

Stress isolating signal path for integrated circuits

Assignee: NXP USA Inc
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Filing: 1992-08-12
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Granted: 1993-10-05
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Expires: 2012-08-12
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Abstract

Abstract A stress isolating signal path having one end of fixed to a bonding pad of an integrated circuit chip and another end which forms a flexible bonding surface is provided. The flexible bonding surface may be bonded to external package components or external circuitry using conventional wire bond, epoxy bond, tape automated bonding, flip chip bonding, or the like. The signal path is formed using conventional semiconductor thin film deposition, patterning, and etching techniques. The signal path comprises a conductive material compatible with batch semiconductor manufacturing technology.

Inventors

  • 👤 Ira E. Baskett

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 05:08
CPC Classifications
G; G01; G01P; G01P15/00; G01P15/02; G01P15/08; G01P15/0802; H; H10; H10W; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5524

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 79 words
A stress isolated integrated circuit comprising: an integrated circuit having circuitry formed on an upper surface, wherein the circuitry includes an area for receiving an electrical signal; a polysilicon spring formed on the circuitry and having a first end coupled to the arms for receiving an electrical signal and a second end, wherein the first end is affixed to the integrated circuit and the second end is separated from the upper surface of the integrated circuit by a gap.
Claim 2
Dependent Claim 79 words
A stress isolated integrated circuit comprising: an integrated circuit having circuitry formed on an upper surface, wherein the circuitry includes an area for receiving an electrical signal; a polysilicon spring formed on the circuitry and having a first end coupled to the arms for receiving an electrical signal and a second end, wherein the first end is affixed to the integrated circuit and the second end is separated from the upper surface of the integrated circuit by a gap.
Claim 3
Dependent Claim 15 words
The IC of claim 1 wherein the spring allows less vertical motion than horizontal motion.
Claim 4
Dependent Claim 11 words
The IC of claim 1 wherein the spring comprises doped polysilicon.
Claim 5
Independent Claim 140 words
A method of making a stress signal path for a semiconductor integrated circuit comprising: providing a semiconductor wafer having an upper surface; forming a plurality of integrated circuits in the upper surface, wherein each of the integrated circuits includes an area for receiving an electrical signal; covering the upper surface with a sacrificial layer; patterning the sacrificial layer to expose the area for receiving an electrical signal; covering the sacrifial layer and exposed area with a layer of spring material; patterning the layer of spring material to form a signal path having a first portion affixed to the area for receiving an electrical signal and a second portion extends over the sacrificial layer; and removing the sacrificial layer so that the second portion of the signal path is separated from the upper surface of the semiconductor wafer by a gap.
Claim 6
Independent Claim 140 words
A method of making a stress signal path for a semiconductor integrated circuit comprising: providing a semiconductor wafer having an upper surface; forming a plurality of integrated circuits in the upper surface, wherein each of the integrated circuits includes an area for receiving an electrical signal; covering the upper surface with a sacrificial layer; patterning the sacrificial layer to expose the area for receiving an electrical signal; covering the sacrifial layer and exposed area with a layer of spring material; patterning the layer of spring material to form a signal path having a first portion affixed to the area for receiving an electrical signal and a second portion extends over the sacrificial layer; and removing the sacrificial layer so that the second portion of the signal path is separated from the upper surface of the semiconductor wafer by a gap.
Claim 7
Dependent Claim 29 words
The method of claim 4 wherein the step of covering the sacrifial layer and exposed area with a layer of spring material further comprises depositing a layer of polysilicon.
Claim 8
Dependent Claim 30 words
The method of claim 4 wherein the step of covering the sacrifial layer and exposed area with a layer of spring material further comprises depositing a layer of a metal.
Claim 9
Dependent Claim 37 words
The method of claim 4 wherein the step of covering the sacrifial layer and exposed area with a layer of spring material further comprises depositing a layer of a dielectric then film covered by a conductive film.
Claim 10
Dependent Claim 24 words
The method of claim 4 further comprising a forming a bonding material on an upper surface of the second portion of the signal path.

References Cited (Backward Citations)

US3487541A Cited
US3588628A Cited
US4881117A Cited
US4990991A Cited
US4924292A Cited
US4994895A Cited
US4980753A Cited
US4933743A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-10-04 1997-04-05 1997-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-10-04 2001-04-05 2001-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-10-04 2005-04-05 2005-10-05 $7700.00 Window Closed / Lapsed

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