US5250827A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit having a DRAM cell unit and a nonvolatile cell unit
Assignee: Seiko Instruments Inc
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Filing: 1991-06-18
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Granted: 1993-10-05
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Expires: 2011-06-18
Abstract
Abstract A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased. Further, the composition of the integrated circuit having a smaller number of constituent elements allows high-density circuit formation.
Inventors
- 👤 Naoto Inoue
- 👤 Motoo Toyama
- 👤 Hiroshi Takahashi
- 👤 Masahiko Kinbara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:27
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/22; G11C14/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
252 words
A semiconductor integrated circuit, comprising: a first transistor having a first gate electrode, first drain electrode and first source electrode, the first transistor being connected to a bit line at one of the first drain and first source electrodes; a first capacitor comprising a paraelectric substance, the first capacitor having first and second electrodes, one of the first and second electrodes of the first capacitor being connected to the other one of the first drain and first source electrodes which is not connected to the bit line; a first line connected to the other one of the first and second electrodes of the first capacitor which is not connected to the first transistor; a word line connected to the first gate electrode of the first transistor; a second transistor having a second gate electrode, second drain electrode and second source electrode, the second transistor being connected to the bit line at one of the second source and second drain electrodes; a second capacitor comprising a ferroelectric substance, the second capacitor having first and second electrodes, one of the first and second electrodes of the second capacitor being connected to the other one of the second source and second drain electrodes of the second transistor which is not connected to the bit line; a second line connected to the second gate electrode of the second transistor; and a third line connected to the other one of the first and second electrodes of the second capacitor which is not connected to the second transistor.
Claim 2
Dependent Claim
252 words
A semiconductor integrated circuit, comprising: a first transistor having a first gate electrode, first drain electrode and first source electrode, the first transistor being connected to a bit line at one of the first drain and first source electrodes; a first capacitor comprising a paraelectric substance, the first capacitor having first and second electrodes, one of the first and second electrodes of the first capacitor being connected to the other one of the first drain and first source electrodes which is not connected to the bit line; a first line connected to the other one of the first and second electrodes of the first capacitor which is not connected to the first transistor; a word line connected to the first gate electrode of the first transistor; a second transistor having a second gate electrode, second drain electrode and second source electrode, the second transistor being connected to the bit line at one of the second source and second drain electrodes; a second capacitor comprising a ferroelectric substance, the second capacitor having first and second electrodes, one of the first and second electrodes of the second capacitor being connected to the other one of the second source and second drain electrodes of the second transistor which is not connected to the bit line; a second line connected to the second gate electrode of the second transistor; and a third line connected to the other one of the first and second electrodes of the second capacitor which is not connected to the second transistor.
Claim 3
Dependent Claim
156 words
A semiconductor integrated circuit, comprising: a first transistor having a first gate electrode, first drain electrode and first source electrode, the first source electrode being connected to a bit line; a first capacitor comprising a paraelectric substance, the first capacitor having first and second electrodes, the first electrode of the first capacitor being connected to the first drain electrode; a first line connected to the second electrode of the first capacitor; a word line connected to the first gate electrode; a second transistor having a second gate electrode, second drain electrode and second source electrode, the second source electrode being connected to the bit line; a second capacitor comprising a ferroelectric substance, the second capacitor having first and second electrodes, the first electrode of the second capacitor being connected to the second drain electrode; a second line connected to the second gate electrode; and a third line connected to the second electrode of the second capacitor.
Claim 4
Dependent Claim
156 words
A semiconductor integrated circuit, comprising: a first transistor having a first gate electrode, first drain electrode and first source electrode, the first source electrode being connected to a bit line; a first capacitor comprising a paraelectric substance, the first capacitor having first and second electrodes, the first electrode of the first capacitor being connected to the first drain electrode; a first line connected to the second electrode of the first capacitor; a word line connected to the first gate electrode; a second transistor having a second gate electrode, second drain electrode and second source electrode, the second source electrode being connected to the bit line; a second capacitor comprising a ferroelectric substance, the second capacitor having first and second electrodes, the first electrode of the second capacitor being connected to the second drain electrode; a second line connected to the second gate electrode; and a third line connected to the second electrode of the second capacitor.
Claim 5
Dependent Claim
203 words
A semiconductor integrated circuit, comprising: a DRAM cell unit comprising a first transistor having gate, drain and source electrodes, a bit line connected to one of the drain and source electrodes of the first transistor, a first capacitor comprising a paraelectric substance and having first and second electrodes, the first electrode of the first capacitor being connected to the other of the drain and source electrodes of the first transistor which is not connected to the bit line, a first line connected to the second electrode of the first capacitor, and a word line connected to the gate electrode of the first transistor; and a nonvolatile cell unit comprising a second transistor having gate, drain and source electrodes, one of the drain and source electrodes of the second transistor being connected to the bit line, a second capacitor comprising a ferroelectric substance and having first and second electrodes, the first electrode of the second capacitor being connected to the other of the drain and source electrodes of the second transistor which is not connected to the bit line, a second line connected to the gate electrode of the second transistor, and a third line connected to the second electrode of the second capacitor.
Claim 6
Dependent Claim
203 words
A semiconductor integrated circuit, comprising: a DRAM cell unit comprising a first transistor having gate, drain and source electrodes, a bit line connected to one of the drain and source electrodes of the first transistor, a first capacitor comprising a paraelectric substance and having first and second electrodes, the first electrode of the first capacitor being connected to the other of the drain and source electrodes of the first transistor which is not connected to the bit line, a first line connected to the second electrode of the first capacitor, and a word line connected to the gate electrode of the first transistor; and a nonvolatile cell unit comprising a second transistor having gate, drain and source electrodes, one of the drain and source electrodes of the second transistor being connected to the bit line, a second capacitor comprising a ferroelectric substance and having first and second electrodes, the first electrode of the second capacitor being connected to the other of the drain and source electrodes of the second transistor which is not connected to the bit line, a second line connected to the gate electrode of the second transistor, and a third line connected to the second electrode of the second capacitor.
Claim 7
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 3; wherein the bit line is connected to the source electrode of the first transistor, and the first electrode of the first capacitor is connected to the drain electrode of the first transistor.
Claim 8
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 3, wherein the bit line is connected to the drain electrode of the first transistor, and the first electrode of the first capacitor is connected to the source electrode of the first transistor.
Claim 9
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 3; wherein the bit line is connected to the source electrode of the second transistor, and the first electrode of the second capacitor is connected to the drain electrode of the second transistor.
Claim 10
Dependent Claim
40 words
A semiconductor integrated circuit according to claim 3; wherein the bit line is connected to the drain electrode of the second transistor, and the first electrode of the second capacitor is connected to the source electrode of the first transistor.
Claim 11
Dependent Claim
46 words
A semiconductor integrated circuit according to claim 3; wherein the second capacitor is operable to store a charge from a time at which a signal inputted to the second line is commenced to a time at which a signal inputted to the bit line is terminated.
Claim 12
Dependent Claim
16 words
A semiconductor integrated circuit according to claim 8; wherein the first and third lines are grounded.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |