US5245210A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOS type semiconductor device
Assignee: NEC Corp
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Filing: 1991-08-09
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Granted: 1993-09-14
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Expires: 2011-08-09
Abstract
Abstract In a MOS type semiconductor device, a first contact hole having a length similar to a width of source/drain diffusion layers is opened in a first layer insulation film. In the first contact hole, a refractory metal or the like is filled and a second layer insulation film is formed to cover the same. In the second layer insulation film, a second contact hole having an area smaller than that of the first contact hole is opened and, through this second contact hole, an aluminum interconnection and the source/drain regions are electrically connected. Therefore, it becomes possible to avoid decrease of ON current of a transistor owing to resistance elements of the source/drain diffusion layers and at the same time to reduce an area occupied by the aluminum interconnection to be connected to the source/drain regions on a transistor device.
Inventors
- 👤 Tadashi Nishigoori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
148 words
A metal oxide semiconductor type semiconductor device comprising: (a) a semiconductor substrate, (b) a gate electrode formed on said substrate with an interposed gate insulation film, (c) a diffusion layer formed in a surface region of said substrate at each side of said gate electrode, (d) a first layer of insulation film having a first contact hole formed on said diffusion layer to extend along said gate electrode in a width direction of said gate electrode, (e) a refractory metal or metal silicide film filled in said first contact hole, (f) a second layer insulation film having a second contact hole formed on said refractory metal or metal silicide film to have an area smaller than that of said first contact hole, and (g) a metal interconnection extending on said second layer insulation film and contacting said refractory metal or metal silicide film through said second contact hole.
Claim 2
Dependent Claim
148 words
A metal oxide semiconductor type semiconductor device comprising: (a) a semiconductor substrate, (b) a gate electrode formed on said substrate with an interposed gate insulation film, (c) a diffusion layer formed in a surface region of said substrate at each side of said gate electrode, (d) a first layer of insulation film having a first contact hole formed on said diffusion layer to extend along said gate electrode in a width direction of said gate electrode, (e) a refractory metal or metal silicide film filled in said first contact hole, (f) a second layer insulation film having a second contact hole formed on said refractory metal or metal silicide film to have an area smaller than that of said first contact hole, and (g) a metal interconnection extending on said second layer insulation film and contacting said refractory metal or metal silicide film through said second contact hole.
Claim 3
Dependent Claim
23 words
The metal oxide semiconductor type semiconductor device according to claim 1, wherein said refractory metal is tungsten and said metal interconnection is alluminium.
Claim 4
Dependent Claim
160 words
A semiconductor device comprising a semiconductor substrate, source and drain regions selectively formed in said semiconductor substrate, a gate insulating film formed on said semiconductor substrate between said source and drain regions, a gate electrode formed on said gate insulating film, a first insulating layer covering said gate electrode and said source and drain regions, a first contact hole selectively formed in said first insulating layer to expose a part of at least one of said source and drain regions along said gate electrode, a first conductive layer filling said first contact hole, a second insulating layer covering said first insulating layer and said first conductive layer, a second contact hole having an area smaller than the area of said first contact hole and exposing a part of said first conductive layer, and a second conductive layer formed in contact with the part of said first conductive layer through said first contact hole and elongated over said second insulating layer.
Claim 5
Dependent Claim
160 words
A semiconductor device comprising a semiconductor substrate, source and drain regions selectively formed in said semiconductor substrate, a gate insulating film formed on said semiconductor substrate between said source and drain regions, a gate electrode formed on said gate insulating film, a first insulating layer covering said gate electrode and said source and drain regions, a first contact hole selectively formed in said first insulating layer to expose a part of at least one of said source and drain regions along said gate electrode, a first conductive layer filling said first contact hole, a second insulating layer covering said first insulating layer and said first conductive layer, a second contact hole having an area smaller than the area of said first contact hole and exposing a part of said first conductive layer, and a second conductive layer formed in contact with the part of said first conductive layer through said first contact hole and elongated over said second insulating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |