US4914050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: Toshiba Corp
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Filing: 1989-06-07
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Granted: 1990-04-03
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Expires: 2009-06-07
Abstract
Abstract A concave portion having a V-shaped cross section is formed in a contact region of a p-type silicon substrate. The contact region is defined by a hole formed in an insulative layer formed over the substrate. An n-type diffusion layer is formed in the substrate so as to surround the concave portion. The n-type diffusion layer is connected to a drain region of a FET. A metal layer is formed on the insulative layer such that the metal layer is in electric contact with the diffusion layer through the increased surface area of the concave portion in the contact region.
Inventors
- 👤 Tadashi Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/083; H10D; H10D62/00; H10D62/01; H10D62/021; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/256; H10W20/031; H10W20/056; H10W20/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
181 words
A method for manufacturing a semiconductor device having a field effect transistor which is formed on a semiconductive substrate of a first conductivity type and which has an electrode layer insulatively disposed above said substrate, said method comprising the steps of: (a) forming an insulative layer on said substrate having a surface in which first and second semiconductive regions of a second conductivity type are formed; (b) forming first and second openings in said insulative layer so as to define first and second contact holes for said first and second regions; (c) subjecting said substrate to an etching treatment to form first and second concave portions under said first and second openings; (d) doping impurities into said substrate to form third and fourth semiconductive regions of the second conductivity type, said third and fourth regions being deeper than said first and second regions; (e) doping impurities into said substrate so as to form fifth and sixth semiconductive regions which surround said third and fourth regions respectively; and (f) forming first and second conductive layers for said first and second contact holes.
Claim 2
Independent Claim
181 words
A method for manufacturing a semiconductor device having a field effect transistor which is formed on a semiconductive substrate of a first conductivity type and which has an electrode layer insulatively disposed above said substrate, said method comprising the steps of: (a) forming an insulative layer on said substrate having a surface in which first and second semiconductive regions of a second conductivity type are formed; (b) forming first and second openings in said insulative layer so as to define first and second contact holes for said first and second regions; (c) subjecting said substrate to an etching treatment to form first and second concave portions under said first and second openings; (d) doping impurities into said substrate to form third and fourth semiconductive regions of the second conductivity type, said third and fourth regions being deeper than said first and second regions; (e) doping impurities into said substrate so as to form fifth and sixth semiconductive regions which surround said third and fourth regions respectively; and (f) forming first and second conductive layers for said first and second contact holes.
Claim 3
Dependent Claim
30 words
The method according to claim 1, wherein said electrode layer serves as a gate electrode, and wherein said first and second regions act as source and drain of said transistor.
Claim 4
Independent Claim
255 words
A method for manufacturing a semiconductor device having a metal oxide semiconductor field effect transistor which is formed on a semiconductive substrate of a first conductivity type and which has a gate electrode layer insulatively disposed above said substrate, said method comprising the steps of: (a) forming an insulative layer on said substrate having a surface in which first and second semiconductive regions of a second conductivity type are formed to serve as source and drain of said transistor; (b) forming first and second openings in said insulative layer so as to define first and second contact holes for said first and second regions; (c) subjecting said substrate to an etching treatment to form in the surface of said substrate first and second concave portions which have inner surfaces and bottom portions and are adjacent to said first and second semiconductive regions, respectively, said first and second regions including contact portions which extend below the bottom portions of said first and second concave portions to surround said first and second concave portions, respectively; (d) doping impurities through said contact holes into said first and second concave portions of said substrate to form third and fourth semiconductive regions of the first conductivity type which surround said contact portions of said first and second regions, respectively; and (e) forming first and second conductive layers on said insulative layer so as to cover said contact holes in such a manner that they are in electrical contact with said first and second semiconductive regions through said concave portions, respectively.
Claim 5
Independent Claim
255 words
A method for manufacturing a semiconductor device having a metal oxide semiconductor field effect transistor which is formed on a semiconductive substrate of a first conductivity type and which has a gate electrode layer insulatively disposed above said substrate, said method comprising the steps of: (a) forming an insulative layer on said substrate having a surface in which first and second semiconductive regions of a second conductivity type are formed to serve as source and drain of said transistor; (b) forming first and second openings in said insulative layer so as to define first and second contact holes for said first and second regions; (c) subjecting said substrate to an etching treatment to form in the surface of said substrate first and second concave portions which have inner surfaces and bottom portions and are adjacent to said first and second semiconductive regions, respectively, said first and second regions including contact portions which extend below the bottom portions of said first and second concave portions to surround said first and second concave portions, respectively; (d) doping impurities through said contact holes into said first and second concave portions of said substrate to form third and fourth semiconductive regions of the first conductivity type which surround said contact portions of said first and second regions, respectively; and (e) forming first and second conductive layers on said insulative layer so as to cover said contact holes in such a manner that they are in electrical contact with said first and second semiconductive regions through said concave portions, respectively.
Claim 6
Dependent Claim
30 words
The method according to claim 3, wherein each of said first and second concave portions is deep enough to pierce the corresponding one of said first and second semiconductive regions.
Claim 7
Dependent Claim
17 words
The method according to claim 4, wherein said first and second concave portions have a V-shaped cross-section.
Claim 8
Dependent Claim
23 words
The method according to claim 4, wherein said third and fourth regions are formed to be thicker than said first and second regions.
Claim 9
Dependent Claim
89 words
The method according to claim 4, wherein the step of forming said conductive layer comprises the sub-steps of: forming in each of said first and second contact holes of said insulative layer a first metal layer having a surface recessed in accordance with the surface shape of the corresponding concave portion; and forming on said insulative layer a second metal layer which is electrically in contact with said first metal layer by the recessed surface of said first metal layer in each of said first and second contact holes.
Claim 10
Dependent Claim
16 words
The method according to claim 7, wherein said etching treatment includes an isotropic ion etching process.
References Cited (Backward Citations)
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