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US5245201A
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Photoelectric converting device and image processing apparatus utilizing the same
Assignee: Canon Inc
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Filing: 1991-12-31
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Granted: 1993-09-14
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Expires: 2011-12-31
Abstract
Abstract A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.
Inventors
- 👤 Hiraku Kozuka
- 👤 Shigetoshi Sugawa
- 👤 Ihachiro Gofuku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:03
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/197; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
87 words
A photoelectric converting device comprising, in sequence: (a) a plurality of pixel electrodes provided on a substrate; (b) a microcrystalline doping layer of P- or N-conductivity type provided on each of said pixel electrodes; (c) an amorphous P- or N-type layer region provided on said substrate between adjacent of said pixel electrodes; (d) a photoelectric conversion region having an I-type or substantially I-type layer and an N- or P-type layer; and (e) an inter-element region having an I-type or substantially I-type layer and N- or P-type layer.
Claim 2
Dependent Claim
87 words
A photoelectric converting device comprising, in sequence: (a) a plurality of pixel electrodes provided on a substrate; (b) a microcrystalline doping layer of P- or N-conductivity type provided on each of said pixel electrodes; (c) an amorphous P- or N-type layer region provided on said substrate between adjacent of said pixel electrodes; (d) a photoelectric conversion region having an I-type or substantially I-type layer and an N- or P-type layer; and (e) an inter-element region having an I-type or substantially I-type layer and N- or P-type layer.
Claim 3
Dependent Claim
21 words
A photoelectric converting device according to claim 1, wherein at least said elements (b) and (c) each contain at least silicon.
Claim 4
Dependent Claim
42 words
A photoelectric converting device according to claim 1, wherein said elements (b) and (c) are laminated on the substrate on which at least one of a charge accumulating unit, a driving circuit, a scanning circuit and a read out circuit is formed.
Claim 5
Dependent Claim
31 words
A photoelectric converting device according to claim 1, wherein said elements (b) and (c) each contain at least an element selected from the group consisting of Ge, C, O and N.
Claim 6
Dependent Claim
135 words
An image processing apparatus comprising at least: (i) a photoelectric converting device comprising, in sequence, (a) a plurality of pixel electrodes provided on a substrate; (b) a microcrystalline doping layer of P-or N-conductivity type provided on each of said pixel electrodes; (c) an amorphous P- or N-type layer region provided on said substrate between adjacent of said pixel electrodes; (d) a photoelectric conversion region having an I-type or substantially I-type layer and an N- or P-type layer; and (e) an inter-element region having an I-type or substantially I-type layer and an N- or P-type layer; (ii) an optical system for entering image information into said photoelectric converting device; (iii) a driver for driving said photoelectric converting device; and (iv) a controller for processing a signal bearing said image information released from said photoelectric converting device.
Claim 7
Dependent Claim
135 words
An image processing apparatus comprising at least: (i) a photoelectric converting device comprising, in sequence, (a) a plurality of pixel electrodes provided on a substrate; (b) a microcrystalline doping layer of P-or N-conductivity type provided on each of said pixel electrodes; (c) an amorphous P- or N-type layer region provided on said substrate between adjacent of said pixel electrodes; (d) a photoelectric conversion region having an I-type or substantially I-type layer and an N- or P-type layer; and (e) an inter-element region having an I-type or substantially I-type layer and an N- or P-type layer; (ii) an optical system for entering image information into said photoelectric converting device; (iii) a driver for driving said photoelectric converting device; and (iv) a controller for processing a signal bearing said image information released from said photoelectric converting device.
Claim 8
Dependent Claim
21 words
An image processing apparatus according to claim 5, wherein at least said elements (b) and (c) each contain at least silicon.
Claim 9
Dependent Claim
41 words
An image processing apparatus according to claim 5, wherein said elements (b) and (c) are laminated on the substrate on which at least one of a charge accumulating unit, a driving circuit, a scanning circuit and a readout circuit is formed.
Claim 10
Dependent Claim
31 words
An image processing apparatus according to claim 6, wherein said elements (b) and (c), each contain at least an element selected from the group consisting of Ge, C, O and N.
References Cited (Backward Citations)
US4523214A
Cited
JPS5840985A
Cited
JPS6047574A
Cited
DE3503048A1
Cited
US4644406A
Cited
US4971919A
Cited
JPS6149569A
Cited
JPS61216358A
Cited
US4962412A
Cited
US5091764A
Cited
US5084747A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |