US5244556A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for depositing thin film on substrate by sputtering process
Assignee: Fujitsu Semiconductor Ltd
•
Filing: 1991-09-19
•
Granted: 1993-09-14
•
Expires: 2011-09-19
Abstract
Abstract There is disclosed a method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under predetermined ambient conditions in the chamber. The method includes the steps of: mounting a target, which is formed of a backing plate and a target plate directly connected to the backing plate, on the cathode assembly, the backing plate having a heat conductivity greater than that of the target plate; heating the target at a predetermined temperature at which residual gases absorbed on the target plate are removed therefrom; and activating the cathode assembly so that the target plate is sputtered. The target can also be formed of a backing plate, a spacer directly connected to the backing plate, and a target plate directly connected to the spacer, the spacer having a melting point greater than that of the target plate.
Inventors
- 👤 Minoru Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:08
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; C23C14/542; C23C14/34; C23C14/3407; C23C14/3414; C23C14/3421; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3402
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
132 words
A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising: (a) mounting the target, which is formed of a backing plate and target plate directly connected to said backing plate, on the cathode assembly, said backing plate having a heat conductivity greater than that of said target plate; (b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and then (c) activating said cathode assembly to thereby sputter said target plate.
Claim 2
Independent Claim
132 words
A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising: (a) mounting the target, which is formed of a backing plate and target plate directly connected to said backing plate, on the cathode assembly, said backing plate having a heat conductivity greater than that of said target plate; (b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and then (c) activating said cathode assembly to thereby sputter said target plate.
Claim 3
Dependent Claim
19 words
A method as claimed in claim 1, further comprising: heating said target to a temperature greater than 150° C.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1, further comprising: heating said target to a temperature less than the melting point temperature of said target plate.
Claim 5
Dependent Claim
33 words
A method as claimed in claim 1, wherein said step (c) further comprises: supplying power from said cathode assembly to said target at a power density of at least 28 W/cm 2 .
Claim 6
Dependent Claim
36 words
A method as claimed in claim 1, wherein said step (c) further comprises activating said cathode assembly to thereby sputter said target plate at a temperature less than the melting point temperature of said target plate.
Claim 7
Dependent Claim
38 words
A method as claimed in claim 1 further comprising: (d) supplying a reactive gas to said chamber during the sputtering process thereby to deposit the thin film including a component derived from said reactive gas on said substrate.
Claim 8
Independent Claim
143 words
A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising: (a) mounting the target, which is formed of a backing plate, a spacer directly connected to said backing plate and a target plate directly connected to said spacer, on the cathode assembly, said spacer having a melting point temperature greater than the melting point temperature of said target plate; (b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and then (c) activating said cathode assembly to thereby sputter said target plate.
Claim 9
Independent Claim
143 words
A method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under a predetermined ambient condition in the chamber, said method comprising: (a) mounting the target, which is formed of a backing plate, a spacer directly connected to said backing plate and a target plate directly connected to said spacer, on the cathode assembly, said spacer having a melting point temperature greater than the melting point temperature of said target plate; (b) evacuating the chamber and conducting heat through the backing plate of the target to the target plate thereof thereby to heat said target plate to a predetermined temperature at which residual gases absorbed on said target plate are removed therefrom; and then (c) activating said cathode assembly to thereby sputter said target plate.
Claim 10
Dependent Claim
19 words
A method as claimed in claim 7, further comprising: heating said target to a temperature greater than 150° C.
Claim 11
Dependent Claim
25 words
A method as claimed in claim 7, further comprising: heating said target to a temperature less than the melting point temperature of said target plate.
Claim 12
Dependent Claim
33 words
A method as claimed in claim 7, wherein said step (c) further comprises: supplying power from said cathode assembly to said target at a power density of at least 28 W/cm 2 .
Claim 13
Dependent Claim
36 words
A method as claimed in claim 7, wherein said step (c) further comprises activating said cathode assembly to thereby sputter said target plate at a temperature less than the melting point temperature of said target plate.
Claim 14
Dependent Claim
38 words
A method as claimed in claim 7 further comprising: (d) supplying a reactive gas to said chamber during the sputtering process thereby to deposit the thin film including a component derived from said reactive gas on said substrate.
References Cited (Backward Citations)
US4049523A
Cited
US4324631A
Cited
JPS6345368A
Cited
JPS63270459A
Cited
JPH01132760A
Cited
JPH01283367A
Cited
JPH01283368A
Cited
JPH02166274A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |