Patent US5239197A successfully refreshed from Google Patents.
US5239197A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile memory device and transistor circuits on the same chip
Assignee: Panasonic Holdings Corp
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Filing: 1992-09-02
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Granted: 1993-08-24
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Expires: 2012-09-02
Abstract
Abstract This invention relates to a semiconductor device comprising an N-type semiconductor substrate, an intermediate breakdown voltage part comprised of a first P-type diffusion layer formed in the N-type semiconductor substrate, a high breakdown voltage part comprised of a second P-type diffusion layer formed in the N-type semiconductor substrate, and a transistor circuit part formed in the N-type semiconductor substrate. According to the invention, a semiconductor device capable of simultaneously forming plural functioning devices in a single semiconductor substrate, causing hardly any short channel effect, is obtained.
Inventors
- 👤 Masaharu Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:18
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B41/42
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
118 words
A semiconductor device comprising: an N-type semiconductor substrate; an intermediate breakdown voltage part, said intermediate breakdown voltage part comprised of a first P-type well having a breakdown voltage and formed in said N-type semiconductor substrate; a high breakdown voltage part, said high breakdown voltage part comprised of a second P-type well formed in said N-type semiconductor substrate; and a transistor circuit part formed in said N-type semiconductor substrate; said first P-type well being provided with both a third N-type well and a nonvolatile memory therein, said second P-type well being provided with a transistor to drive said nonvolatile memory, and said third N-type well being provided with a circuit to write in and read from said nonvolatile memory.
Claim 2
Dependent Claim
118 words
A semiconductor device comprising: an N-type semiconductor substrate; an intermediate breakdown voltage part, said intermediate breakdown voltage part comprised of a first P-type well having a breakdown voltage and formed in said N-type semiconductor substrate; a high breakdown voltage part, said high breakdown voltage part comprised of a second P-type well formed in said N-type semiconductor substrate; and a transistor circuit part formed in said N-type semiconductor substrate; said first P-type well being provided with both a third N-type well and a nonvolatile memory therein, said second P-type well being provided with a transistor to drive said nonvolatile memory, and said third N-type well being provided with a circuit to write in and read from said nonvolatile memory.
Claim 3
Dependent Claim
34 words
A semiconductor device according to claim 1, wherein the depth of said first P-type well is deeper than the depth of said second P-type well and the wells to form said transistor circuit part.
Claim 4
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein the voltage applied to the first P-type well, the second P-type well, the third N-type well and the transistor parts are different from each other.
Claim 5
Dependent Claim
31 words
A semiconductor device according to claim 2, wherein the depth of the first P-type well is 8 μm, and that of the third said N-type well is 2.5 to 4.0 μm.
Claim 6
Dependent Claim
40 words
A semiconductor device according to claim 1, wherein the impurity concentration of said first P-type well is 2×10 16 /cm 3 , and the impurity concentration of said third N-type well is 2×10 16 to 8×10 16 /cm 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-23 | 1997-02-22 | 1997-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-23 | 2001-02-22 | 2001-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-23 | 2005-02-22 | 2005-08-24 | $7700.00 | Window Closed / Lapsed |