Patent US5238864A successfully refreshed from Google Patents.
US5238864A
Expired / Lapsed
US
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Method of making solid-state imaging device
Assignee: Mitsubishi Electric Corp
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Filing: 1992-11-10
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Granted: 1993-08-24
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Expires: 2012-11-10
Abstract
Abstract A method for producing a solid-state imaging device including a photodetector including implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type semiconductor layer; thermally diffusing the implanted ions to produce a second conductivity type region including a relatively deep second conductivity type subregion and a relatively shallow second conductivity type region having a higher dopant impurity concentration than said relatively deep second conductivity type subregion; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said second relatively shallow second conductivity type subregion using said charge transfer electrode as a mask to produce a first conductivity type impurity diffusion region shallower than said relatively shallow second conductivity type subregion.
Inventors
- 👤 Shigeto Maegawa
- 👤 Kiyohiko Sakakibara
- 👤 Hidekazu Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:26
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
144 words
A method for producing a solid-state imaging device including a photodetector comprising: selectively forming a second conductivity type region in a first conductivity type semiconductor layer; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; implanting a dopant impurity producing the second conductivity type in said second conductivity type region using said charge transfer electrode as a mask to produce a second conductivity type subregion within said second conductivity type region that has an impurity concentration higher than the remainder of said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said subregion using said charge transfer electrode as a mask to produce a first conductivity type region shallower than said second conductivity type subregion.
Claim 2
Independent Claim
144 words
A method for producing a solid-state imaging device including a photodetector comprising: selectively forming a second conductivity type region in a first conductivity type semiconductor layer; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; implanting a dopant impurity producing the second conductivity type in said second conductivity type region using said charge transfer electrode as a mask to produce a second conductivity type subregion within said second conductivity type region that has an impurity concentration higher than the remainder of said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said subregion using said charge transfer electrode as a mask to produce a first conductivity type region shallower than said second conductivity type subregion.
Claim 3
Independent Claim
155 words
A method for producing a solid-state imaging device including a photodetector comprising: implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type semiconductor layer; thermally diffusing the implanted ions to produce a second conductivity type region including a relatively deep second conductivity type subregion and a relatively shallow second conductivity type region having a higher dopant impurity concentration than said relatively deep second conductivity type subregion; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said second relatively shallow second conductivity type subregion using said charge transfer electrode as a mask to produce a first conductivity type impurity diffusion region shallower than said relatively shallow second conductivity type subregion.
Claim 4
Independent Claim
155 words
A method for producing a solid-state imaging device including a photodetector comprising: implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type semiconductor layer; thermally diffusing the implanted ions to produce a second conductivity type region including a relatively deep second conductivity type subregion and a relatively shallow second conductivity type region having a higher dopant impurity concentration than said relatively deep second conductivity type subregion; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said second relatively shallow second conductivity type subregion using said charge transfer electrode as a mask to produce a first conductivity type impurity diffusion region shallower than said relatively shallow second conductivity type subregion.
Claim 5
Dependent Claim
39 words
The method for producing a solid-state imaging device of claim 1 including implanting a dopant impurity producing the second conductivity type in said layer spaced from said second conductivity type region as a channel layer for transferring charge carriers.
Claim 6
Dependent Claim
39 words
The method for producing a solid-state imaging device of claim 2 including implanting a dopant impurity producing the second conductivity type in said layer spaced from said second conductivity type region as a channel layer for transferring charge carriers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-23 | 1997-02-22 | 1997-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-23 | 2001-02-22 | 2001-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-23 | 2005-02-22 | 2005-08-24 | $7700.00 | Window Closed / Lapsed |