US5236864A — Method of manufacturing a surface-emitting type s…

Claim 1

Independent Claim 187 words

A method of manufacturing a surface-emitting-type semiconductor laser device having a buried part including a multi-layer body with a GaAs active layer and a burying part formed around the buried part, the method comprising the steps of: first forming on a substrate a GaAlAs/GaAs system multilayer body from which said buried part is to be formed, said multilayer body having at least one layer of GaAlAs material above the active layer of GaAs material with a layer of GaAlAs material being an upper layer of the multilayer body, second forming a mask layer of a GaAlAs film on top of said GaAlAs upper layer of said multilayer body, third removing by etching both the peripheral part of the layers of said multilayer body and the corresponding peripheral part of said GaAlAs mask layer leaving a mesa of said multilayer body to form said buried part with the mask layer thereon, fourth forming said burying part around said mesa which forms said buried part; and fifth thereafter removing the said GaAlAs mask layer which remains on said multilayer body after the fourth step of forming said burying part.

Claim 2

Independent Claim 187 words

A method of manufacturing a surface-emitting-type semiconductor laser device having a buried part including a multi-layer body with a GaAs active layer and a burying part formed around the buried part, the method comprising the steps of: first forming on a substrate a GaAlAs/GaAs system multilayer body from which said buried part is to be formed, said multilayer body having at least one layer of GaAlAs material above the active layer of GaAs material with a layer of GaAlAs material being an upper layer of the multilayer body, second forming a mask layer of a GaAlAs film on top of said GaAlAs upper layer of said multilayer body, third removing by etching both the peripheral part of the layers of said multilayer body and the corresponding peripheral part of said GaAlAs mask layer leaving a mesa of said multilayer body to form said buried part with the mask layer thereon, fourth forming said burying part around said mesa which forms said buried part; and fifth thereafter removing the said GaAlAs mask layer which remains on said multilayer body after the fourth step of forming said burying part.

Claim 3

Dependent Claim 28 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein the composition ratio of Al of said GaAlAs film is 0.3 or more.

Claim 4

Dependent Claim 36 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein said multilayer body is formed in the step of said first forming by an organometalic vapor phase epitaxy method (OMVPE method).

Claim 5

Dependent Claim 31 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein the steps of said first and said second forming are performed in the same growing apparatus.

Claim 6

Dependent Claim 27 words

A method of manufacturing a surface-emitting type semiconductor laser device in accordance with claim 1, wherein an etchant including sulfuric acid is used in the third step.

Claim 7

Dependent Claim 28 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 5, wherein said etchant is a mixed liquid of sulfuric acid and hydrogen peroxide water.

Claim 8

Dependent Claim 34 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 6, wherein the mixing ratio of said mixed liquid is H 2 SO 4 :H 2 O 2 :H 2 O=1:8:8.

Claim 9

Dependent Claim 28 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein a dry etching process is used in the step of said third forming.

Claim 10

Dependent Claim 35 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein said burying part is formed in the steps of said fourth forming by a liquid phase epitaxy method (LPE method).

Claim 11

Dependent Claim 27 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, wherein part of said burying part is removed in removing said mask layer.

Claim 12

Dependent Claim 35 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 1, further comprising a sixth step of forming an electrode and a reflecting mirror on said buried part after said fifth step.

Claim 13

Dependent Claim 64 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 11, further comprising the steps of seventh forming of a hole as a projecting window on said substrate, eighth forming of a reflecting mirror on the bottom of said hole and ninth forming of an electrode on the bottom surface of said remaining substrate after the step of said sixth forming.

Claim 14

Dependent Claim 37 words

A method of manufacturing a surface-emitting type semiconductor laser device in accordance with claim 1, wherein said multilayer body includes an active layer consisting of a GaAs film and a cladding layer composed of a GaAlAs film.

Claim 15

Independent Claim 156 words

A method of manufacturing a surface emitting-type semiconductor laser device having a buried structure, wherein a burying part is formed around a buried part which has a semiconductor multilayer body including a layer of an active material, comprising: first forming said semiconductor multilayer body on a substrate having an active layer and an upper layer above it as the top layer of the multilayer body, second forming a mask layer of a material which is the same as the material of the upper layer of the multilayer body on the top of said multilayer body upper layer, third forming said buried part by removing a part of said multilayer body and the corresponding part of said mask layer by etching the corresponding area of both, fourth forming said burying part around said buried part formed by etching, and fifth removing the part of said mask layer remaining on said multilayer body of the said fourth step.

Claim 16

Independent Claim 156 words

A method of manufacturing a surface emitting-type semiconductor laser device having a buried structure, wherein a burying part is formed around a buried part which has a semiconductor multilayer body including a layer of an active material, comprising: first forming said semiconductor multilayer body on a substrate having an active layer and an upper layer above it as the top layer of the multilayer body, second forming a mask layer of a material which is the same as the material of the upper layer of the multilayer body on the top of said multilayer body upper layer, third forming said buried part by removing a part of said multilayer body and the corresponding part of said mask layer by etching the corresponding area of both, fourth forming said burying part around said buried part formed by etching, and fifth removing the part of said mask layer remaining on said multilayer body of the said fourth step.

Claim 17

Dependent Claim 36 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 14, wherein said multilayer body includes an active layer composed of a GaAs film and a cladding layer composed of a GaAlAs film.

Claim 18

Dependent Claim 22 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 15, wherein said mask layer is composed of GaAlAs.

Claim 19

Dependent Claim 70 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 14, where the multilayer body includes a cap layer, an active layer and a cladding layer between said cap and active layers, said mask layer being on said cap layer, each of the layers being etched approximately during a same etching rate during said third forming whereby an undercut beneath said mask layer is substantially not formed.

Claim 20

Dependent Claim 31 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 17, wherein the step of said third forming includes removing a portion of the active layer by meltback.

Claim 21

Dependent Claim 34 words

A method of manufacturing a surface-emitting-type semiconductor laser device in accordance with claim 14 further comprising the step of meltback of the active layer prior to the fourth step of forming the burying part.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-08-16	1997-02-15	1997-08-17	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-08-16	2001-02-15	2001-08-17	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-08-16	2005-02-15	2005-08-17	$7700.00	Window Closed / Lapsed

Method of manufacturing a surface-emitting type semiconductor laser device

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