Patent US4728761A successfully refreshed from Google Patents.
Patent US5233429A successfully refreshed from Google Patents.
US5233429A
Expired / Lapsed
US
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CCD image sensor having improved structure of VCCD region thereof
Assignee: Intellectual Ventures II LLC
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Filing: 1991-10-11
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Granted: 1993-08-03
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Expires: 2011-10-11
Abstract
Abstract A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising a P type layer formed underneath and surrounding said N type VCCD region, an N type layer formed underneath and surrounding said P type layer, a P type well formed underneath and surrounding said N type layer, and an N type substrate formed under said P type well, said substrate being adapted and arranged for the application thereto of a shutter voltage. In accordance with the present invention, the CCD image sensor is capable of preventing an overflow drain caused by error charges or excess charges resulting from a smear. Therefore, the photoelectric efficiency can be increased in a wavelength of the red color type wherein the amount of light energy is small.
Inventors
- 👤 Hun J. Jung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:04
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10F39/153
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
100 words
A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type layer formed underneath and surrounding said N type VCCD region; (b) an N type layer formed underneath and surrounding said P type layer; (c) a P type well formed underneath and surrounding said N type layer and extending between the N type layer and the N type photodetecting region to electrically isolate the N type layer from the N type photodetecting region; and (d) an N type substrate formed under said P type well.
Claim 2
Dependent Claim
100 words
A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type layer formed underneath and surrounding said N type VCCD region; (b) an N type layer formed underneath and surrounding said P type layer; (c) a P type well formed underneath and surrounding said N type layer and extending between the N type layer and the N type photodetecting region to electrically isolate the N type layer from the N type photodetecting region; and (d) an N type substrate formed under said P type well.
Claim 3
Dependent Claim
20 words
A CCD image sensor according to claim 1, wherein said substrate is adapted and arranged for receiving a shutter voltage.
Claim 4
Dependent Claim
25 words
A CCD image sensor as set forth in claim 1, wherein said N type layer includes an electrode formed thereon, for receiving a shutter voltage.
Claim 5
Dependent Claim
27 words
A CCD image sensor as set forth in claim 1, wherein said P type layer has a charge concentration higher than that of said P type well.
Claim 6
Dependent Claim
43 words
A CCD image sensor as set forth in claim 1, wherein said N type layer has a charge concentration lower than those of said N type photodetecting region and said N type VCCD region and higher than that of said N type substrate.
Claim 7
Dependent Claim
126 words
In a CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type ion layer formed underneath and surrounding an N type VCCD region; (b) a P type well formed underneath and surrounding said P type layer; and (c) an N type substrate formed under said P type well; the improvement comprising: (d) an N type layer additionally interposed between said P type layer and said P type well, such that said N type layer is formed underneath and surrounding said P type layer, is separated from the N type photodetecting region by the P type well, and is electrically isolated from the N type photodetecting region by the P type well.
Claim 8
Dependent Claim
126 words
In a CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type ion layer formed underneath and surrounding an N type VCCD region; (b) a P type well formed underneath and surrounding said P type layer; and (c) an N type substrate formed under said P type well; the improvement comprising: (d) an N type layer additionally interposed between said P type layer and said P type well, such that said N type layer is formed underneath and surrounding said P type layer, is separated from the N type photodetecting region by the P type well, and is electrically isolated from the N type photodetecting region by the P type well.
Claim 9
Dependent Claim
20 words
A CCD image sensor according to claim 6, wherein said substrate is adapted and arranged for receiving a shutter voltage.
Claim 10
Dependent Claim
23 words
A CCD image sensor according to claim 6, wherein said N type layer includes an electrode formed therein, for receiving a shutter voltage.
Claim 11
Dependent Claim
25 words
A CCD image sensor according to claim 6, wherein the P type layer has a charge concentration higher than that of the P type well.
Claim 12
Dependent Claim
41 words
A CCD image sensor according to claim 6, wherein said N type layer has a charge concentration lower than those of said N type photodetecting region and said N type VCCD region and higher than that of said N type substrate.
Claim 13
Dependent Claim
88 words
A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type layer formed underneath and surrounding said N type VCCD region; (b) an N type layer formed underneath and surrounding said P type layer, said N type layer including an electrode formed thereon, for receiving a shutter voltage; (c) a P type well formed underneath and surrounding said N type layer; and (d) an N type substrate formed under said P type well.
Claim 14
Dependent Claim
88 words
A CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type layer formed underneath and surrounding said N type VCCD region; (b) an N type layer formed underneath and surrounding said P type layer, said N type layer including an electrode formed thereon, for receiving a shutter voltage; (c) a P type well formed underneath and surrounding said N type layer; and (d) an N type substrate formed under said P type well.
Claim 15
Dependent Claim
112 words
In a CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type ion layer formed underneath and surrounding an N type VCCD region; (b) a P type well formed underneath and surrounding said P type layer; and (c) an N type substrate formed under said P type well; the improvement comprising: (d) an N type layer additionally interposed between said P type layer and said P type well, such that said N type layer is formed underneath and surrounding said P type layer, said N type layer including an electrode formed therein, for receiving a shutter voltage.
Claim 16
Dependent Claim
112 words
In a CCD image sensor having an N type photodetecting region, an N type VCCD region and an N type HCCD region, comprising: (a) a P type ion layer formed underneath and surrounding an N type VCCD region; (b) a P type well formed underneath and surrounding said P type layer; and (c) an N type substrate formed under said P type well; the improvement comprising: (d) an N type layer additionally interposed between said P type layer and said P type well, such that said N type layer is formed underneath and surrounding said P type layer, said N type layer including an electrode formed therein, for receiving a shutter voltage.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-02 | 1997-02-01 | 1997-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-02 | 2001-02-01 | 2001-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-02 | 2005-02-01 | 2005-08-03 | $7700.00 | Window Closed / Lapsed |