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US4875100A Expired / Lapsed US ⏱️ 0.0 years remaining

Electronic shutter for a CCD image sensor

Assignee: Sony Corp
•
Filing: 1987-10-21
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Granted: 1989-10-17
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Expires: 2007-10-21
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Abstract

Abstract A solid state imager device having an electronic shutter function suitable for use in a video camera or an electronic still camera to suppress brightness differences on TV screens between open and closed periods of the shutter having a semiconductor substrate of a first conductivity type, a region of second conductivity type formed on the semiconductivity substrate of the first conductivity type and a signal charge accumulating region formed on the surface side of the second conductivity type region wherein, a predetermined voltage is applied to the semiconductor substrate of the first conductivity type and the signal charges accumulated in the signal charge accumulating region are discharged to the semiconductor substrate of the first conductivity type, whereby, the exposure time of the solid state imager device can be controlled so that when this imager device is used, for example, in a video camera, the video camera does not have to be provided with a mechanical shutter.

Inventors

  • 👤 Kazuya Yonemoto
  • 👤 Yoshiaki Kagawa
  • 👤 Kikue Ishikawa
  • 👤 Tomoyuki Suzuki
  • 👤 Masaharu Hamasaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 23:28
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/158

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 104 words
An electronic shutter for a CCD image sensor, comprising: a CCD imager device having a semiconductor substrate of a first conductivity type, a region of a second conductivity type formed upon said semiconductor substrate of said first conductivity type, a signal charge accumulating region formed on a surface side of said region of a second conductivity type; and means for applying a predetermined voltage to said semiconductor substrate of said first conductivity type within a horizontal blanking period to thereby discharge signal charges accumulated in said signal charge accumulating region to said semiconductor substrate of said first conductivity type within the horizontal blanking period.
Claim 2
Dependent Claim 104 words
An electronic shutter for a CCD image sensor, comprising: a CCD imager device having a semiconductor substrate of a first conductivity type, a region of a second conductivity type formed upon said semiconductor substrate of said first conductivity type, a signal charge accumulating region formed on a surface side of said region of a second conductivity type; and means for applying a predetermined voltage to said semiconductor substrate of said first conductivity type within a horizontal blanking period to thereby discharge signal charges accumulated in said signal charge accumulating region to said semiconductor substrate of said first conductivity type within the horizontal blanking period.
Claim 3
Independent Claim 85 words
A method for utilizing a CCD image device as an electronic shutter for an electronic camera comprising the step of applying a voltage potential across a semiconductor substrate of a first conductivity type and a region of a second conductivity type formed upon said semiconductor substrate within a horizontal blanking period to thereby discharge signal charges accumulated in a signal charge accumulating region formed on a surface side of said region of a second conductivity type to said semiconductor substrate within said horizontal blanking period.
Claim 4
Independent Claim 85 words
A method for utilizing a CCD image device as an electronic shutter for an electronic camera comprising the step of applying a voltage potential across a semiconductor substrate of a first conductivity type and a region of a second conductivity type formed upon said semiconductor substrate within a horizontal blanking period to thereby discharge signal charges accumulated in a signal charge accumulating region formed on a surface side of said region of a second conductivity type to said semiconductor substrate within said horizontal blanking period.

References Cited (Backward Citations)

US3934161A Cited
US4605862A Cited
US4626916A Cited
US4524391A Cited
US4626915A Cited
US4636865A Cited
US4743778A Cited
US4769709A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-10-16 1993-04-17 1993-10-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-10-16 1997-04-17 1997-10-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-10-16 2001-04-17 2001-10-17 $7700.00 Window Closed / Lapsed

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