Patent US5232876A successfully refreshed from Google Patents.
US5232876A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a silicon layer having increased surface area
Assignee: SK Hynix Inc
•
Filing: 1991-10-23
•
Granted: 1993-08-03
•
Expires: 2011-10-23
Abstract
Abstract The invention relates to a process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface and which comprises depositing an alloy layer comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 which is deposited on a substrate. The depositing of the alloy layer takes place at a predetermined temperature to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces not covered by the plurality of B-material 2Y precipitations. The resulting structure is then cooled, preferably to room temperature. The solubility of the B-material 2Y, which may be considered as the solute, is extremely limited in the A-material 2X, which may be considered as the solvent. The A-material 2X is selectively removed from the plurality of first insulating layer surfaces and from the plurality of B-material 2Y precipitations deposited on the insulating layer 1 to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer to define a highly granulated surface. A silicon layer 3 for charge storage electrode is deposited on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Inventors
- 👤 Jae K. Kim
- 👤 Chul G. Ko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:52
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
165 words
A method for manufacturing a silicon layer having an increased surface area, the method comprising: providing a first insulating layer 1 deposited on a substrate; depositing an alloy layer 2 comprising two materials 2X, 2Y on the first insulating layer 1; heating the alloy layer 2 to enable one material 2X to be melted and to enable the other material 2Y not to be melted, thereby dividing one material 2X form the other material 2Y of the alloy layer 2 to partitively form the other material 2Y on the first insulating layer 1; removing the one material 2X partitively formed from the other material 2Y of the alloy layer 2 to expose a portion of the first insulating layer 1, thereby remaining the other material 2Y on the first insulating layer 1 and simultaneously providing a highly granulated surface 1X; and, depositing a silicon layer 3 on the entire surface of the resulting structure to form a granulated silicon layer having an increased surface area.
Claim 2
Independent Claim
165 words
A method for manufacturing a silicon layer having an increased surface area, the method comprising: providing a first insulating layer 1 deposited on a substrate; depositing an alloy layer 2 comprising two materials 2X, 2Y on the first insulating layer 1; heating the alloy layer 2 to enable one material 2X to be melted and to enable the other material 2Y not to be melted, thereby dividing one material 2X form the other material 2Y of the alloy layer 2 to partitively form the other material 2Y on the first insulating layer 1; removing the one material 2X partitively formed from the other material 2Y of the alloy layer 2 to expose a portion of the first insulating layer 1, thereby remaining the other material 2Y on the first insulating layer 1 and simultaneously providing a highly granulated surface 1X; and, depositing a silicon layer 3 on the entire surface of the resulting structure to form a granulated silicon layer having an increased surface area.
Claim 3
Dependent Claim
43 words
The method of claim 1, wherein the alloy layer is Al-Si binary alloy layer such that one material 2X of the alloy layer is Aluminum and the other material 2Y thereof is silicon the content rate of which is 1-30 percentages of Al-content.
Claim 4
Dependent Claim
46 words
The method of claim 1, wherein the material 2X partitively formed from the other material 2Y of the alloy layer is removed by utilizing a predetermined etch selectivity for which the etch selectivity of one material 2X is higher than that of the other material 2Y.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein a second insulating layer 4 is formed between the surface 1X and the silicon layer 3.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein the alloy layer is Al-Cu-Si ternary alloy layer.
Claim 7
Dependent Claim
254 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface, said process comprising: depositing an alloy layer 2 comprising an A-material X and a B-material 2X on a first insulating layer 1 deposited on a substrate at a temperature sufficient to enable the A-material 2X to melt thereby dividing the A-material 2X from the B-material 2Y of the alloy layer 2 to partitively form the B-material 2Y on the first insulating layer 1; cooling the alloy layer 2 to a temperature sufficient to form a plurality of B-material 2Y precipitations on the first insulating layer 1 and an a-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to expose the plurality of surfaces of the first insulating layer and the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to define a highly granulated surface; and depositing a silicon layer 3 for charge storage electrode on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Claim 8
Dependent Claim
254 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface, said process comprising: depositing an alloy layer 2 comprising an A-material X and a B-material 2X on a first insulating layer 1 deposited on a substrate at a temperature sufficient to enable the A-material 2X to melt thereby dividing the A-material 2X from the B-material 2Y of the alloy layer 2 to partitively form the B-material 2Y on the first insulating layer 1; cooling the alloy layer 2 to a temperature sufficient to form a plurality of B-material 2Y precipitations on the first insulating layer 1 and an a-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to expose the plurality of surfaces of the first insulating layer and the plurality of B-material 2Y precipitations deposited on the first insulating layer 1 to define a highly granulated surface; and depositing a silicon layer 3 for charge storage electrode on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Claim 9
Dependent Claim
15 words
The process of claim 6 wherein the alloy layer 2 is cooled to room temperature.
Claim 10
Dependent Claim
19 words
The process of claim 6 wherein the solubility of the B-material 2Y is extremely limited in the A-material 2X.
Claim 11
Dependent Claim
21 words
The process of claim 8 wherein aluminum is used as the A-material 2X and silicon is used as the B-material 2Y.
Claim 12
Dependent Claim
14 words
The process of claim 9 wherein the aluminum contains 1-30 percent silicon by weight.
Claim 13
Dependent Claim
19 words
The process of claim 6 wherein the A-material 2X is an aluminum-copper alloy and the B-material 2Y is silicon.
Claim 14
Dependent Claim
19 words
The process of claim 11 wherein the Al-Cu-Si layer is deposited at a temperature of about 450 degrees Celsius.
Claim 15
Dependent Claim
63 words
The process of claim 6 wherein the alloy layer 2 is an A-B binary alloy layer 2 consisting of an Al-Si binary alloy layer which is heated to a temperature of 200-550 degree Celsius during the depositing of the A-B binary alloy layer 2 and then cooled to room temperature to make the plurality of B-material 2Y precipitations on the insulating layer 1.
Claim 16
Dependent Claim
48 words
The process of claim 6 wherein the A-material 2X is removed from the B-material 2Y of the alloy layer 2 and from the insulating layer by utilizing an etchant with a predetermined etch selectivity for the A-material 2X being higher than the etch selectivity of the B-material 2Y.
Claim 17
Dependent Claim
36 words
The process of claim 14 wherein the etchant is phosphoric acid, H 3 PO 4 and the alloy layer 2 is selected from the group consisting of an Al-Si alloy layer or an Al-Cu-Si alloy layer.
Claim 18
Dependent Claim
241 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface, said process comprising: depositing an alloy layer 2, comprising an A-material 2X and a B-material 2Y, with the B-material 2Y having an extremely limited solubility in the A-material 2X, at a temperature of 200-550 degrees Celsius on a first insulating layer 1 which is deposited on a substrate and cooling the heated alloy layer 2 to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y precipitations; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the insulating layer to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer by selectively etching the A-material 2X with phosphoric acid to define a highly granulated surface; and depositing a silicon layer 3 for charge storage electrode on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Claim 19
Dependent Claim
241 words
A process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface, said process comprising: depositing an alloy layer 2, comprising an A-material 2X and a B-material 2Y, with the B-material 2Y having an extremely limited solubility in the A-material 2X, at a temperature of 200-550 degrees Celsius on a first insulating layer 1 which is deposited on a substrate and cooling the heated alloy layer 2 to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces 1 not covered by the plurality of B-material 2Y precipitations; selectively removing the A-material 2X from the plurality of first insulating layer surfaces 1 and from the plurality of B-material 2Y precipitations deposited on the insulating layer to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer by selectively etching the A-material 2X with phosphoric acid to define a highly granulated surface; and depositing a silicon layer 3 for charge storage electrode on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.
Claim 20
Dependent Claim
35 words
The process of claim 16 wherein the A-material 2X of the alloy layer is aluminum and the B-material 2Y of the alloy layer is silicon with the Aluminum containing about 1-30 percent silicon by weight.
Claim 21
Dependent Claim
24 words
The process of claim 17 wherein the alloy layer is heated at a temperature of 400 degree Celsius and then cooled to room temperature.
Claim 22
Dependent Claim
31 words
The process of claim 16 wherein the A-material 2X is Aluminum-Copper alloy and the B-material 2Y is silicon and where the solubility of Si is extremely limited in the Al-Cu alloy.
References Cited (Backward Citations)
US4927783A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-02 | 1997-02-01 | 1997-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-02 | 2001-02-01 | 2001-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-02 | 2005-02-01 | 2005-08-03 | $7700.00 | Window Closed / Lapsed |