Patent US5232869A successfully refreshed from Google Patents.
US5232869A
Expired / Lapsed
US
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Metal deposition
Assignee: SAFC Hitech Ltd
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Filing: 1992-07-28
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Granted: 1993-08-03
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Expires: 2012-07-28
Abstract
Abstract In the deposition of metal on solid substrates by a Metal Organic Chemical Deposition process, an improvement comprises the provision of vapors of a precursor of the metal by passing an inert carrier gas through a mixture of the metal precursor and a liquid having a vapor pressure at ambient temperature lower than that of the metal precursor and in which the metal precursor is at least partially soluble.
Inventors
- 👤 Dario M. Frigo
- 👤 Antonius W. Gal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:22
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C23C16/44; C23C16/448; C23C16/4481; C23C16/4482; C30B25/14; C30B29/00; C30B29/02; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
85 words
In the process of depositing a metal on a solid substrate by a Metal Organic Chemical Deposition process in which a metal precursor is provided to the substrate as a gaseous mixture of metal precursor vapor in a carrier gas, the improvement of providing the gaseous mixture by intimately contacting the carrier gas and a mixture of a solid metal precursor and a liquid having a vapor pressure below that of the solid metal precursor and in which the precursor is at least partially soluble.
Claim 2
Dependent Claim
85 words
In the process of depositing a metal on a solid substrate by a Metal Organic Chemical Deposition process in which a metal precursor is provided to the substrate as a gaseous mixture of metal precursor vapor in a carrier gas, the improvement of providing the gaseous mixture by intimately contacting the carrier gas and a mixture of a solid metal precursor and a liquid having a vapor pressure below that of the solid metal precursor and in which the precursor is at least partially soluble.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein the metal precursor is trimethylindium.
Claim 4
Dependent Claim
15 words
The process of claim 2 wherein the carrier gas is hydrogen, helium,, argon or nitrogen.
Claim 5
Dependent Claim
17 words
The process of claim 2 wherein the liquid has a boiling point of at least 150° C.
Claim 6
Dependent Claim
17 words
The process of claim 4 wherein the liquid is a hydrocarbon of at least 9 carbon atoms.
Claim 7
Dependent Claim
20 words
The process of claim 5 wherein the liquid is formed by complexing between the metal precursor and a Lewis base.
Claim 8
Dependent Claim
23 words
The process of claim 6 wherein the Lewis base is a tertiary amine, a triazine free from active hydrogen atoms or a polyether.
Claim 9
Dependent Claim
65 words
A process of producing a gaseous mixture of inert carrier gas substantially saturated with vapor of a metal-organic compound by passing the carrier gas through a mixture of the solid metal compound and a liquid having a vapor pressure below that of the metal compound at the temperature of the passing and in which the metal compound is at least partially soluble in the liquid.
Claim 10
Dependent Claim
65 words
A process of producing a gaseous mixture of inert carrier gas substantially saturated with vapor of a metal-organic compound by passing the carrier gas through a mixture of the solid metal compound and a liquid having a vapor pressure below that of the metal compound at the temperature of the passing and in which the metal compound is at least partially soluble in the liquid.
Claim 11
Dependent Claim
11 words
The process of claim 8 wherein the metal compound is trimethylindium.
Claim 12
Dependent Claim
17 words
The process of claim 9 wherein the liquid has a boiling point of at least 150° C.
Claim 13
Dependent Claim
11 words
The process of claim 10 wherein the liquid is a hydrocarbon.
Claim 14
Dependent Claim
29 words
The process of claim 11 wherein the liquid is formed by complexing the metal compound with a tertiary amine, a triazine free from active hydrogen atoms or a polyether.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-02 | 1997-02-01 | 1997-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-02 | 2001-02-01 | 2001-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-02 | 2005-02-01 | 2005-08-03 | $7700.00 | Window Closed / Lapsed |