Dry etching apparatus

Claim 2

A dry etching apparatus in which a gas introduced into a chamber is ionized to become a plasma to etch a layer formed on a semiconductor wafer, comprising: window means provided on the periphery of said chamber for receiving light beams emanating from a plurality of monitoring areas on the wafer, the light beams representing a thickness of the layer at the respective monitoring areas; means for detecting the light beams received by said window means to determine etching end times of the respective monitoring areas; means for calculating etching parameters including a uniformity of etching rate in said monitoring areas based on the determined etching end times; and means for controlling an etching process based on the calculated etching parameters.

Claim 3

The apparatus according to claim 1, wherein the calculating means calculates a maximum allowable etching end time based on a first etching end time which is first detected by the detecting means and a predetermined uniformity standard, and the controlling means immediately stops the etching process if the detecting means has not detected the etching end times of all the monitoring areas at the time point of the maximum allowable end time.

Claim 4

The apparatus according to claim 1, wherein the light beams are plasma light beams emitted from etching reaction products.

Claim 5

The apparatus according to claim 1, wherein the window means includes a plurality of windows.

Claim 6

The apparatus according to claim 4, wherein each of the windows is equipped with a lens for focusing the light beam on an end face of an optical fiber connected to the detecting means.

Claim 7

A dry etching apparatus in which a gas introduced into a chamber is ionized to become a plasma to etch a layer formed on a semiconductor wafer, comprising: window means provided on the periphery of said chamber for receiving light beams emanating from a plurality of monitoring areas on the wafer, the light beams representing a thickness of the layer at the respective monitoring areas; means for detecting the light beams received by said window means to determine etching end times of the respective monitoring areas; means for calculating etching parameters including the maximum allowable etching end time based on a first etching end time which is first detected by the detecting means and a predetermined uniformity standard; and means for controlling an etching process based on the calculated etching parameters including immediately stopping the etching process if the detecting means has not detected the etching end times of all the monitoring areas at the time point of the maximum allowable end time.

Claim 8

A dry etching apparatus in which a gas introduced into a chamber is ionized to become a plasma to etch a layer formed on a semiconductor wafer, comprising: window means provided on the periphery of said chamber for receiving light beams emanating from a plurality of monitoring areas on the wafer, the light beams representing a thickness of the layer at the respective monitoring areas; means for detecting the light beams received by said window means to determine etching end times of the respective monitoring areas; means for calculating etching parameters including the maximum allowable etching end time based on a first etching end time which is first detected by the detecting means and a predetermined uniformity standard; and means for controlling an etching process based on the calculated etching parameters including immediately stopping the etching process if the detecting means has not detected the etching end times of all the monitoring areas at the time point of the maximum allowable end time.