Apparatus for testing a PLA by measuring a current consumed by the PLO when activated with known codes

Claim 2

A test circuit for testing a microprocessor having a data bus comprising: an instruction register connected to the data bus and having a control input and a plurality of output lines, said instruction register receiving an instruction signal from the data bus in response to a control signal received by the control input and outputting the received instruction signal to said output lines; a programmable logic array having a plurality of NAND circuits each forming a conductive path between first and second terminals when a predetermined instruction signal is received thereby, each of said NAND circuits including a said first terminal, a said second terminal and a plurality of MOSFETs each having a first electrode, a second electrode and a gate electrode coupled to an ouput line of said instruction register, and with the MOSFETs being connected in series by the first and second electrodes between the respective said first and second terminals; a test terminal for providing a test signal; a precharge terminal for providing a precharge signal; a first precharge circuit coupled to said first terminals of said NAND circuits, to said test terminal and to said precharge terminal, said first precharge circuit supplying a first potential level to said first terminal of said NAND circuits in response to either the precharge signal or the test signal; a power supply terminal for supply a second potential level; and a second precharge circuit coupled to said second terminals of said NAND circuit, to said precharge terminal and to said power supply terminal, said second precharge circuit supplying the second potential level to said second terminal of said NAND circuits in response to the precharge signal, whereby the NAND circuits are independently tested by knowing the instruction signal that activate the NAND circuits and by measuring a current drain of the activated NAND circuits.

Claim 3

A test circuit according to claim 1, wherein the first potential level is a ground level and the second potential level is a power supply voltage level.

Claim 4

A test circuit according to claim 2, further comprising means for measuring a current drain at said power supply terminal.

Claim 5

A test circuit according to claim 1, wherein said first precharge circuit includes a plurality of MOSFETs each having a first electrode coupled to said first terminal of a respective said NAND circuit, a second electrode coupled to a node applied to the first potential level, and a gate electrode coupled to said precharge terminal and to said test terminal.

Claim 6

A test circuit according to claim 4, further comprising a gate circuit having a first input terminal coupled to said precharge trminal, a second input terminal coupled to said test terminal and an output terminal coupled to said gate electrode of said MOSFET of each of said first precharge circuits.

Claim 7

A test circuit according to claim 5, wherein said gate circuit is an OR gate circuit.

Claim 8

A test circuit according to calim 1, wherein said second precharge circuit includes a plurality of MOSFETs each having a first electrode coupled to said second terminal of a respective said NAND circuit, a second electrode coupled to said power supply terminal and a gate electrode coupled to said precharge terminal.

Claim 9

A test circuit according to calim 1, wherein said second precharge circuit includes a plurality of MOSFETs each having a first electrode coupled to said second terminal of a respective said NAND circuit, a second electrode coupled to said power supply terminal and a gate electrode coupled to said precharge terminal.

Claim 10

A test circuit according to claim 7, further comprising an ammeter connected between said power supply terminal and a power supply.

Claim 11

A test circuit according to claim 10, further comprising: a plurality of sense amplifiers each having an input coupled to the second terminal of a respective said NAND circuit and an ouput, each of said sense amplifiers outputting a sensed signal to the output thereof; and a control signal generating circuit connected between the output of one of said sense amplifiers and said control input of sid instruction register, said control signal generating circuit receiving the sensed signal output from said one of said sense amplifiers and an instruction register writing signal, and generating the control signal for said instruction register from the received signals.

Claim 12

A test circuit for testing a microprocessor having a data bus, the microprocessor operated in a plurality of machine cycles, the test circuit comprising: an instruction register coupled to the data bus and having a plurality of output lines, said instruction register receiving an instruction signal from said data bus and outputting the received instruction signal to said output lines; a plurality of first lines supplying timing signals which represent the machine cycle; a programmable logic array having a plurality of first NAND circuits and second NAND circuits, each of the NAND circuits including a first terminal, a second terminal and a plurality of MOSFETs each having a first electrode, a second electrode and a gate electrode, with the MOSFETs being interconnected in series by the first and second electrodes between the respective first and second terminals, said gate electrodes of said MOSFETs of said first NAND circuits being coupled to said output lines of said instruction register, said gate electrodes of said MOSFETs of said second NAND circuits being coupled to said first lines, said second terminal of each of said first NAND circuits being coupled to a said first terminal of a said second NAND circuit to form an electric path between said first terminal of the respective said first NAND circuit and said second terminal of the respective associated said second NAND circuit when the respective said first NAND circuit receives a predetermined instruction signal and the respective associated said second NAND circuit receives a predetermined timing signal; a test terminal for providing a test signal; a precharge terminal for providing a precharge signal; a first precharge circuit coupled to said first terminal of said first NAND circuits, to said test terminal and to said precharge terminal, said first precharge circuit supplying a first potential level to said first terminals of said first NAND circuits in response to either the precharge signal or the test signal; a power supply terminal for supplying a second potential level; and a second precharge circuit coupled to said second terminals of said second NAND circuits, to said precharge terminal and to said power supply terminal, said second precharge circuit supplying a second potential level to said second terminal of said second NAND circuits in response to the precharge signal, whereby the NAND circuits are independently tested by knowing the instruction signals that activate the NAND circuits and by measuring a current drain of the activated NAND circuits.

Claim 13

A test circuit for testing a microprocessor having a data bus, the microprocessor operated in a plurality of machine cycles, the test circuit comprising: an instruction register coupled to the data bus and having a plurality of output lines, said instruction register receiving an instruction signal from said data bus and outputting the received instruction signal to said output lines; a plurality of first lines supplying timing signals which represent the machine cycle; a programmable logic array having a plurality of first NAND circuits and second NAND circuits, each of the NAND circuits including a first terminal, a second terminal and a plurality of MOSFETs each having a first electrode, a second electrode and a gate electrode, with the MOSFETs being interconnected in series by the first and second electrodes between the respective first and second terminals, said gate electrodes of said MOSFETs of said first NAND circuits being coupled to said output lines of said instruction register, said gate electrodes of said MOSFETs of said second NAND circuits being coupled to said first lines, said second terminal of each of said first NAND circuits being coupled to a said first terminal of a said second NAND circuit to form an electric path between said first terminal of the respective said first NAND circuit and said second terminal of the respective associated said second NAND circuit when the respective said first NAND circuit receives a predetermined instruction signal and the respective associated said second NAND circuit receives a predetermined timing signal; a test terminal for providing a test signal; a precharge terminal for providing a precharge signal; a first precharge circuit coupled to said first terminal of said first NAND circuits, to said test terminal and to said precharge terminal, said first precharge circuit supplying a first potential level to said first terminals of said first NAND circuits in response to either the precharge signal or the test signal; a power supply terminal for supplying a second potential level; and a second precharge circuit coupled to said second terminals of said second NAND circuits, to said precharge terminal and to said power supply terminal, said second precharge circuit supplying a second potential level to said second terminal of said second NAND circuits in response to the precharge signal, whereby the NAND circuits are independently tested by knowing the instruction signals that activate the NAND circuits and by measuring a current drain of the activated NAND circuits.

Claim 14

A test circuit according to claim 10, wherein the first potential level is a ground level and the second potential level is a power supply voltage level.

Claim 15

A test circuit according to claim 11, further comprising means for measuring a current drain at said power supply terminal.

Claim 16

A test circuit according to claim 10, wherein: said first precharge circuit includes a plurality of MOSFETs with each MOSFET having a first electrode coupled to said first terminal of a respective said first NAND circuit, a second electrode coupled to a node applied to the first potential level, and a gate electrode coupled to said test terminal and to said precharge terminal; and said second precharge circuit includes a plurality of MOSFETs with each said MOFET having a first electrode coupled to said second terminal of at least one said second NAND circuit, a second electrode coupled to said power supply terminal, and a gate elecrode coupled to said precharge terminal.

Claim 17

A test circuit according to claim 13, further comprising an ammeter connected between said power supply terminal and a power supply for said second potential.

Claim 18

A test circuit according to claim 10, wherein: said first NAND circuits include a plurality of groups of said first NAND circuits; said second terminals of said first NAND circuits of the same said group are coupled to said first terminal of a common one of said NAND circuits; and said second terminals of a plurality of said second NAND circuits are coupled together.