US5230746A — Photovoltaic device having enhanced rear reflecti…

Claim 1

Independent Claim 141 words

A photovoltaic device, comprising: a layer of semiconductor material including a semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; an optically reflective electrical contact layer disposed on the second major surface of the semiconductor layer; and said optically reflective electrical contact layer including a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer, an optically transmissive intermediate layer including a dielectric material disposed on the second optically transmissive contact layer, and a layer of electrically conductive optically reflective material disposed on the intermediate layer; wherein said intermediate layer includes portions through which said second optically transmissive conductive layer and said optically reflective conductive layer are conductively connected.

Claim 2

Dependent Claim 141 words

A photovoltaic device, comprising: a layer of semiconductor material including a semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; an optically reflective electrical contact layer disposed on the second major surface of the semiconductor layer; and said optically reflective electrical contact layer including a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer, an optically transmissive intermediate layer including a dielectric material disposed on the second optically transmissive contact layer, and a layer of electrically conductive optically reflective material disposed on the intermediate layer; wherein said intermediate layer includes portions through which said second optically transmissive conductive layer and said optically reflective conductive layer are conductively connected.

Claim 3

Dependent Claim 42 words

The photovoltaic device of claim 1 wherein said intermediate layer is a thin layer of dielectric material which is discontinuous so as to include openings through which said second optically transmissive conductive layer and said optically reflective conductive layer are conductively connected.

Claim 4

Dependent Claim 46 words

The photovoltaic device of claim 1 wherein said intermediate layer is a cermet layer including at least one metal dispersed in the dielectric material, the dispersed metal defining paths through which said second optically transmissive conductive layer and said optically reflective conductive layer ar conductively connected.

Claim 5

Dependent Claim 80 words

The photovoltaic device of claim 1 wherein said layer of semiconductor material comprises a plurality of layers of hydrogenated amorphous silicon of respectively different conductivity types, said layers being arranged in a stacked configuration including a top layer having said first major surface, a bottom layer having said second major surface, and a middle layer interposed between said top and bottom layers, said top and bottom layers being doped with dopants of a first and a second conductivity type, respectively.

Claim 6

Dependent Claim 24 words

The photovoltaic device of claim 4 wherein said first and second conductivity types are p-type and n-type, respectively, and the middle layer is intrinsic.

Claim 7

Dependent Claim 24 words

The photovoltaic device of claim 4 wherein said first and second conductivity types are n-type and p-type, respectively, and the middle layer is intrinsic.

Claim 8

Dependent Claim 71 words

The photovoltaic device of claim 1 wherein said layer of semiconductor material comprises a plurality of photovoltaic cells arranged in a stacked configuration, a top cell of the stack including a top layer having said first major surface, a bottom cell of the stack including a bottom layer having said second major surface, each of said plurality of photovoltaic cells including layers o hydrogenated amorphous silicon of respectively different conductivity types.

Claim 9

Dependent Claim 145 words

A photovoltaic device, comprising: a layer of semiconductor material including a semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; an optically reflective electrical contact layer disposed on the second major surface of the semiconductor layer; and said optically reflective electrical contact layer including a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer, an optically transmissive thin layer of dielectric material disposed on the second optically transmissive contact layer, and a layer of electrically conductive optically reflective material disposed o the thin layer; wherein said thin layer is discontinuous so as to include openings through which said second optically transmissive conductive layer and said optically reflective conductive layer are conductively connected.

Claim 10

Dependent Claim 145 words

A photovoltaic device, comprising: a layer of semiconductor material including a semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; an optically reflective electrical contact layer disposed on the second major surface of the semiconductor layer; and said optically reflective electrical contact layer including a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer, an optically transmissive thin layer of dielectric material disposed on the second optically transmissive contact layer, and a layer of electrically conductive optically reflective material disposed o the thin layer; wherein said thin layer is discontinuous so as to include openings through which said second optically transmissive conductive layer and said optically reflective conductive layer are conductively connected.

Claim 11

Dependent Claim 16 words

The photovoltaic device of claim 8 wherein the thin layer is a layer of silicon dioxide.

Claim 12

Dependent Claim 22 words

The photovoltaic device of claim 9 wherein the silicon dioxide layer has a thickness of less than or equal to 250 Å.

Claim 13

Dependent Claim 22 words

The photovoltaic device of claim 9 wherein the silicon dioxide layer has a thickness of less than or equal to 100 Å.

Claim 14

Dependent Claim 19 words

The photovoltaic device of claim 9 wherein the silicon dioxide layer has a thickness which is approximately 60 Å.

Claim 15

Dependent Claim 44 words

The photovoltaic device of claim 8 wherein the thin layer is composed of a dielectric material selected from the group consisting of SiO, SiO 2 , Si 3 N 4 , SiC, silicon oxynitride, Al 2 O 3 , organic polymers, and amorphous carbon.

Claim 16

Dependent Claim 80 words

The photovoltaic device of claim 8 wherein said layer of semiconductor material comprises a plurality of layers of hydrogenated amorphous silicon of respectively different conductivity types, said layers being arranged in a stacked configuration including a top layer having said first major surface, a bottom layer having said second major surface, and a middle layer interposed between said top and bottom layers, said top and bottom layers being doped with dopants of a first and a second conductivity type, respectively.

Claim 17

Dependent Claim 24 words

The photovoltaic device of claim 14 wherein said first and second conductivity types are p-type and n-type, respectively, and the middle layer is intrinsic.

Claim 18

Dependent Claim 24 words

The photovoltaic device of claim 14 wherein said first and second conductivity types are n-type and p-type, respectively, and the middle layer is intrinsic.

Claim 19

Dependent Claim 71 words

The photovoltaic device of claim 8 wherein said layer of semiconductor material comprises a plurality of photovoltaic cells arranged in a stacked configuration, a top cell of the stack including a top layer having said first major surface, a bottom cell of the stack including a bottom layer having said second major surface, each of said plurality of photovoltaic cells including layers of hydrogenated amorphous silicon of respectively different conductivity types

Claim 20

Dependent Claim 128 words

A photovoltaic device, comprising: a layer of semiconductor material including at least one semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer; a layer of electrically conductive optically reflective material disposed for reflecting light emanating from said second contact layer substantially back thereto; and an optically transmissive intermediate layer, disposed between said second contact layer and said reflective layer for substantially blocking reaction between the second contact layer, and said reflective layer, said optically transmissive intermediate layer having one or more electrically conductive paths therethrough.

Claim 21

Dependent Claim 128 words

A photovoltaic device, comprising: a layer of semiconductor material including at least one semiconductor junction, said semiconductor layer having first and second opposing major surfaces; a first optically transmissive electrically conductive contact layer disposed on the first major surface through which incident light enters the semiconductor layer; a second optically transmissive electrically conductive contact layer disposed on the second major surface of the semiconductor layer; a layer of electrically conductive optically reflective material disposed for reflecting light emanating from said second contact layer substantially back thereto; and an optically transmissive intermediate layer, disposed between said second contact layer and said reflective layer for substantially blocking reaction between the second contact layer, and said reflective layer, said optically transmissive intermediate layer having one or more electrically conductive paths therethrough.

Claim 22

Independent Claim 110 words

A method for forming a photovoltaic device, comprising the steps of: providing an optically transparent substrate; depositing a first optically transmissive electrically conductive contact layer on the substrate; depositing on the first contact layer a layer of semiconductor material including a semiconductor junction; depositing on the layer of semiconductor material a second optically transmissive electrically conductive contact layer; depositing on the second contact layer an optically transmissive intermediate layer including a dielectric material; and depositing a layer of electrically conductive optically reflective material on the intermediate layer; wherein the intermediate layer is deposited to include portions through which the second contact layer and the optically reflective layer are conductively connected.

Claim 23

Independent Claim 110 words

A method for forming a photovoltaic device, comprising the steps of: providing an optically transparent substrate; depositing a first optically transmissive electrically conductive contact layer on the substrate; depositing on the first contact layer a layer of semiconductor material including a semiconductor junction; depositing on the layer of semiconductor material a second optically transmissive electrically conductive contact layer; depositing on the second contact layer an optically transmissive intermediate layer including a dielectric material; and depositing a layer of electrically conductive optically reflective material on the intermediate layer; wherein the intermediate layer is deposited to include portions through which the second contact layer and the optically reflective layer are conductively connected.

Claim 24

Dependent Claim 46 words

The method of claim 19, wherein the step of depositing the intermediate layer includes the substep of depositing a thin layer of dielectric material which is discontinuous so as to include openings through which the second contact layer and the optically reflective layer are conductively connected.

Claim 25

Dependent Claim 50 words

The method of claim 19, wherein the step of depositing the intermediate layer includes the substep of depositing a cermet layer including at least one metal dispersed in the dielectric material, the dispersed metal defining paths through which the second contact layer and the optically reflective layer are conductively connected.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-07-26	1997-01-25	1997-07-27	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-07-26	2001-01-25	2001-07-27	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-07-26	2005-01-25	2005-07-27	$7700.00	Window Closed / Lapsed

Photovoltaic device having enhanced rear reflecting contact

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