US5229643A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor apparatus and semiconductor package
Assignee: Hitachi Ltd
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Filing: 1991-07-24
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Granted: 1993-07-20
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Expires: 2011-07-24
Abstract
Abstract The heat transfer path (the heat radiating portion) from a position very near the semiconductor device as the heat source to the surface of the semiconductor apparatus is made of a material having a large heat conductivity thereby to more rapidly transfer the heat generated in the p-n junction to the surface of the semiconductor apparatus or the outside. This arrangement can cope with that the calorific power is increased as the integration is increased. The formation of the good heat conductive material from the surface of the apparatus to the heat source through the multilayer structure film can be attained by means of the CVD technique.
Inventors
- 👤 Hiroyuki Ohta
- 👤 Norio Ishitsuka
- 👤 Akihiro Yaguchi
- 👤 Sueo Kawai
- 👤 Nobuo Owada
- 👤 Shigeki Hirasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:40
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/461; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H10W40/70; H10W40/77; H10W40/778; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W72/00; H10W72/851; H10W72/874; H10W72/877; H10W74/00; H10W74/10; H10W74/131; H10W74/142; H10W90/00; H10W90/701; H10W90/721; H10W90/722; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
60 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer as a current wire lead portion, and a heat radiator straightly protruding directly from a bottom of said device towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside, said device being laminated on said semiconductor substrate.
Claim 2
Dependent Claim
60 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer as a current wire lead portion, and a heat radiator straightly protruding directly from a bottom of said device towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside, said device being laminated on said semiconductor substrate.
Claim 3
Dependent Claim
15 words
A semiconductor apparatus according to claim 1, wherein said semiconductor substrate comprises an SOI substrate.
Claim 4
Dependent Claim
35 words
A semiconductor apparatus according to claim 1, wherein a plurality of semiconductor devices are formed in a plurality of different layers, and heat radiators protrude respectively from the layers towards the surface of said apparatus.
Claim 5
Dependent Claim
64 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer embedded in said insulating layer, and a heat radiator straightly protruding through said insulating layer directly from said conductive layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside, said device being laminated on said semiconductor substrate.
Claim 6
Dependent Claim
64 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer embedded in said insulating layer, and a heat radiator straightly protruding through said insulating layer directly from said conductive layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside, said device being laminated on said semiconductor substrate.
Claim 7
Dependent Claim
15 words
A semiconductor apparatus according to claim 4, wherein said semiconductor substrate comprises an SOI substrate.
Claim 8
Dependent Claim
35 words
A semiconductor apparatus according to claim 4, wherein a plurality of semiconductor devices are formed in a plurality of different layers and heat radiators protrude respectively from the layers towards the surface of said apparatus.
Claim 9
Dependent Claim
58 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer, formed with said insulating layer in lamination on said semiconductor substrate, and a heat radiator straightly protruding directly from said insulating layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 10
Dependent Claim
58 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer, formed with said insulating layer in lamination on said semiconductor substrate, and a heat radiator straightly protruding directly from said insulating layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 11
Dependent Claim
71 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer, formed on said first insulating layer, a second insulating layer formed at least on said conductive layer, and a heat radiator protruding straightly through said second insulating layer directly from said first insulating layer towards an external surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 12
Dependent Claim
71 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, a conductive layer, formed on said first insulating layer, a second insulating layer formed at least on said conductive layer, and a heat radiator protruding straightly through said second insulating layer directly from said first insulating layer towards an external surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 13
Dependent Claim
94 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer embedded in said insulating layer, and, a seamless heat radiator protruding through said insulating layer directly from at least one of said semiconductor substrate, said wiring layer, said electrode and said insulating layer towards an external surface of said semiconductor substrate and said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device.
Claim 14
Dependent Claim
94 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer embedded in said insulating layer, and, a seamless heat radiator protruding through said insulating layer directly from at least one of said semiconductor substrate, said wiring layer, said electrode and said insulating layer towards an external surface of said semiconductor substrate and said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device.
Claim 15
Dependent Claim
99 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer embedded in said insulating layer, and a seamless heat radiator protruding through said insulating layer directly from at least one of said wiring layer and said electrode towards an external surface of said semiconductor apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device.
Claim 16
Dependent Claim
99 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer embedded in said insulating layer, and a seamless heat radiator protruding through said insulating layer directly from at least one of said wiring layer and said electrode towards an external surface of said semiconductor apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device.
Claim 17
Dependent Claim
105 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device; and a heat radiating board provided in contact with said seamless heat radiator.
Claim 18
Dependent Claim
105 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device; and a heat radiating board provided in contact with said seamless heat radiator.
Claim 19
Dependent Claim
30 words
A semiconductor apparatus according to claim 11, wherein said apparatus includes a plurality of heat radiators, and said heat radiating board is in contact with the plurality of heat radiators.
Claim 20
Dependent Claim
22 words
A semiconductor apparatus according to claim 11, wherein heat radiating fins are provided on an external surface of said heat radiation board.
Claim 21
Dependent Claim
85 words
A semiconductor apparatus comprising a semiconductor substrate; a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current path nor an accumulation portion of electric charge; and a heat radiating lead connected to said seamless heat radiator.
Claim 22
Dependent Claim
85 words
A semiconductor apparatus comprising a semiconductor substrate; a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being laminated on said semiconductor substrate and a part of said seamless heat radiator forming neither a current path nor an accumulation portion of electric charge; and a heat radiating lead connected to said seamless heat radiator.
Claim 23
Dependent Claim
104 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being formed on said semiconductor substrate by lamination, a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device, and said seamless heat radiator being connected to a mounting board.
Claim 24
Dependent Claim
104 words
A semiconductor apparatus comprising a semiconductor substrate; and a device including an insulating layer, an electrode, a wiring layer, and a seamless heat radiator protruding directly from at least one of said semiconductor substrate, said wiring layer and said electrode towards an external surface of said apparatus, said device being formed on said semiconductor substrate by lamination, a part of said seamless heat radiator forming neither a current flow path nor an accumulation portion of electric charge and being characterized by a crystal axis that remains aligned between adjacent layers of said device, and said seamless heat radiator being connected to a mounting board.
Claim 25
Dependent Claim
21 words
A semiconductor apparatus according to claim 14, wherein said heat radiator is bonded to said mounting board through a solder bump.
Claim 26
Dependent Claim
41 words
A semiconductor package having a sealing body sealing the semiconductor apparatus according to any one of claims 1, 4 and 7, wherein, in addition to a current wire lead portion, the heat radiator is brought into contact with said sealing body.
Claim 27
Dependent Claim
27 words
A semiconductor package having a sealing body sealing the semiconductor apparatus according to claim 10, wherein said heat radiator is brought into contact with said sealing body.
Claim 28
Dependent Claim
45 words
A semiconductor package having a sealing body the semiconductor apparatus according to any one of claims 1, 4 and 7, wherein said heat radiator is in contact with said sealing body, and further a heat radiating board is provided in contact with said heat radiator.
Claim 29
Dependent Claim
55 words
A semiconductor package having a sealing body sealing the semiconductor apparatus according to any one of claims 1, 4 and 7 wherein said heat radiator is in contact with said sealing body, said heat radiator is in contact with a heat radiating lead and the heat radiating lead is in contact with a mounting board.
Claim 30
Dependent Claim
39 words
A semiconductor package having a sealing body sealing the semiconductor apparatus according to claim 10, wherein said heat radiator is in contact with said sealing body, and a heat radiating board is provided in contact with said heat radiator.
Claim 31
Dependent Claim
61 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on said semiconductor substrate, and a heat radiator provided in addition to a current wire lead portion and straightly protruding directly from said semiconductor substrate towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 32
Dependent Claim
61 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on said semiconductor substrate, and a heat radiator provided in addition to a current wire lead portion and straightly protruding directly from said semiconductor substrate towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 33
Dependent Claim
73 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on a surface of said semiconductor substrate and including a wiring layer provided as a current wire lead portion, an electrode, and a heat radiator straightly protruding directly from one of said wiring layer and said electrode towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 34
Dependent Claim
73 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on a surface of said semiconductor substrate and including a wiring layer provided as a current wire lead portion, an electrode, and a heat radiator straightly protruding directly from one of said wiring layer and said electrode towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 35
Dependent Claim
15 words
A semiconductor apparatus according to claim 6, wherein said semiconductor substrate comprises an SOI substrate.
Claim 36
Dependent Claim
69 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on a surface of said semiconductor substrate and including an insulating layer, and a heat radiator provided in addition to a current wire lead portion and straightly protruding directly from said insulating layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 37
Dependent Claim
69 words
A semiconductor apparatus comprising a semiconductor substrate, one of a bipolar transistor and a MOS transistor laminated on a surface of said semiconductor substrate and including an insulating layer, and a heat radiator provided in addition to a current wire lead portion and straightly protruding directly from said insulating layer towards a surface of said apparatus such that a part of said heat radiator is exposed to the outside.
Claim 38
Dependent Claim
36 words
A semiconductor apparatus according to claim 25, wherein a plurality of semiconductor devices are formed in a plurality of different layers, and the heat radiators protrude respectively from the layers towards the surface of said apparatus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-19 | 1997-01-18 | 1997-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-19 | 2001-01-18 | 2001-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-19 | 2005-01-18 | 2005-07-20 | $7700.00 | Window Closed / Lapsed |