Patent US5229327A successfully refreshed from Google Patents.
US5229327A
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Process for manufacturing semiconductor device structures cooled by Peltier junctions and electrical interconnect assemblies therefor
Assignee: Micron Technology Inc
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Filing: 1991-10-21
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Granted: 1993-07-20
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Expires: 2011-10-21
Abstract
Abstract A method for utilizing a single series operating current for providing operating power to an electronic device and adjacent cooling therefor while simultaneously increasing or decreasing the cooling in a manner directly proportional to increases and decreases in power consumption and heat dissipation from the electronic device. The electronic device is connected to a first power supply terminal and a Peltier cooling junction is connected to one side of the electronic device. A Peltier heating junction is connected to one side of the Peltier cooling junction remote from the electronic device, and a heat sink is connected between the Peltier heating junction and a second power supply terminal. In this manner, a single series electrical circuit may be used for simultaneously providing operating power to the electronic device and cooling the electronic device in proportion to heat dissipation requirements therefor. Advantageously, the Peltier cooling and heating junctions may be formed in a planar fashion on the surface of a semiconductor die and used to cool integrated circuits which are fabricated within the die.
Inventors
- 👤 Warren M. Farnworth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:34
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/28; H10W72/00; H10W72/851; H10W72/874; H10W72/884; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/732; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
123 words
A method for cooling a semiconductor device which includes the steps of: a. forming a Peltier heating junction on a heat sink, b. forming a Peltier cooling junction on said Peltier heating junction, c. disposing a semiconductor device on top of said Peltier cooling junction, and d. passing current through said Peltier heating and cooling junctions and in series through said semiconductor device and through said heat sink in a direction necessary to produce heat absorption and cooling for said semiconductor device, whereby said heat sink is multi-functional and provides mechanical support, electronic cooling, and electrical biasing for said semiconductor device from a single pair of power supply leads, thereby simplifying assembly and electrical and mechanical interconnect requirements for packaging said semiconductor device.
Claim 2
Independent Claim
123 words
A method for cooling a semiconductor device which includes the steps of: a. forming a Peltier heating junction on a heat sink, b. forming a Peltier cooling junction on said Peltier heating junction, c. disposing a semiconductor device on top of said Peltier cooling junction, and d. passing current through said Peltier heating and cooling junctions and in series through said semiconductor device and through said heat sink in a direction necessary to produce heat absorption and cooling for said semiconductor device, whereby said heat sink is multi-functional and provides mechanical support, electronic cooling, and electrical biasing for said semiconductor device from a single pair of power supply leads, thereby simplifying assembly and electrical and mechanical interconnect requirements for packaging said semiconductor device.
Claim 3
Dependent Claim
62 words
The method defined in claim 1 wherein said Peltier heating and cooling junctions are formed by constructing a header consisting of adjacent layers of metal and semiconductor and metal and then mounting said semiconductor device on an upper metal layer of said header, whereby said upper metal layer of said header forms a Peltier cooling junction with said semiconductor device mounted thereon.
Claim 4
Independent Claim
93 words
A method for making a semiconductor device including a semiconductor substrate which integrated circuits may be fabricated and cooled by Peltier cooling which includes the steps of: a. providing a semiconductor die, providing positive and negative voltage supply conductors mechanically and electrically connected to said semiconductor die, and c. providing multiple layers of metal and semiconductor atop the surface of said semiconductor die and connected between said positive and negative voltage supply conductors and forming multiple interfaces defining a Peltier cooling junction and a Peltier heating junction between said metal and semiconductor layers.
Claim 5
Independent Claim
93 words
A method for making a semiconductor device including a semiconductor substrate which integrated circuits may be fabricated and cooled by Peltier cooling which includes the steps of: a. providing a semiconductor die, providing positive and negative voltage supply conductors mechanically and electrically connected to said semiconductor die, and c. providing multiple layers of metal and semiconductor atop the surface of said semiconductor die and connected between said positive and negative voltage supply conductors and forming multiple interfaces defining a Peltier cooling junction and a Peltier heating junction between said metal and semiconductor layers.
Claim 6
Dependent Claim
47 words
The method defined in claim 3 wherein said metal and semiconductor layers are formed of copper, bismuth telluride, and copper, respectively, atop said semiconductor die and connected between said positive and negative voltage supply conductors, thereby defining series connected Peltier junctions which terminate on said semiconductor die.
Claim 7
Independent Claim
180 words
A method for utilizing a single series operating current for providing operating power to an electronic device and adjacent cooling for said device while simultaneously increasing or decreasing said cooling in proportion to increases and decreases in power consumption and corresponding heat dissipation from said electronic device, which includes the steps of: a. providing a metal lead frame comprising a pair of inner metal strips and a pair of outer metal strips, b. mounting an electronic device to be cooled on said inner metal strips, c. mounting a N-type semiconductor material between one of said inner metal strips and one of said outer metal strips, d. mounting a P-type semiconductor material between the other of said inner metal strips and the other of said outer metals trips thereby forming Peltier cooling junctions at said inner metal strips and forming Peltier heating junctions at said outer metal strips, whereby said outer metal strips may be connected between positive and negative voltage supply terminals for providing both power to said electronic device and Peltier cooling therefor in a single series circuit connection.
Claim 8
Independent Claim
180 words
A method for utilizing a single series operating current for providing operating power to an electronic device and adjacent cooling for said device while simultaneously increasing or decreasing said cooling in proportion to increases and decreases in power consumption and corresponding heat dissipation from said electronic device, which includes the steps of: a. providing a metal lead frame comprising a pair of inner metal strips and a pair of outer metal strips, b. mounting an electronic device to be cooled on said inner metal strips, c. mounting a N-type semiconductor material between one of said inner metal strips and one of said outer metal strips, d. mounting a P-type semiconductor material between the other of said inner metal strips and the other of said outer metals trips thereby forming Peltier cooling junctions at said inner metal strips and forming Peltier heating junctions at said outer metal strips, whereby said outer metal strips may be connected between positive and negative voltage supply terminals for providing both power to said electronic device and Peltier cooling therefor in a single series circuit connection.
Claim 9
Independent Claim
81 words
A method for providing Peltier cooling for integrated circuits formed in a semiconductor die which comprises the steps of: a. providing a semiconductor die having positive and negative voltage supply conductors formed thereon, and b. forming multiple layers of metal, semiconductor and metal on said semiconductor die and defining Peltier cooling and heating junctions connected in series between said positive and negative voltage supply conductors, whereby the metal-semiconductor Peltier junction closest to said semiconductor die provides cooling of said semiconductor die.
Claim 10
Independent Claim
81 words
A method for providing Peltier cooling for integrated circuits formed in a semiconductor die which comprises the steps of: a. providing a semiconductor die having positive and negative voltage supply conductors formed thereon, and b. forming multiple layers of metal, semiconductor and metal on said semiconductor die and defining Peltier cooling and heating junctions connected in series between said positive and negative voltage supply conductors, whereby the metal-semiconductor Peltier junction closest to said semiconductor die provides cooling of said semiconductor die.
Claim 11
Dependent Claim
45 words
The method defined in claim 6 wherein said metal, semiconductor and metal layers are formed of copper, bismuth telluride, and copper, respectively, on said semiconductor die and define Peltier cooling and heating junctions which terminate at a surface passivation layer formed on said semiconductor die.
References Cited (Backward Citations)
US4489742A
Cited
JPS61174749A
Cited
JPS6310551A
Cited
JPS63263751A
Cited
JPH0258449A
Cited
JPH0295449A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-07-19 | 1997-01-18 | 1997-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-19 | 2001-01-18 | 2001-07-20 | $3760.00 | Window Closed / Lapsed |
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