US4489742A
Expired / Lapsed
US
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Thermoelectric device and method of making and using same
Assignee: Energy Conversion Devices Inc
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Filing: 1983-07-21
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Granted: 1984-12-25
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Expires: 2003-07-21
Abstract
Abstract An invention is disclosed which provides improved thermoelectric devices and methods of making and using the same. The device exhibits enhanced efficiency and operating life through the use of a bonding material comprising at least 75% busmuth together with an adherent metallic layer interposed between the boundary structure and correspondary thermoelectric semiconductor element.
Inventors
- 👤 Diane E. Moore
- 👤 Jaime M. Reyes
- 👤 Eugen Munteanu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:31
CPC Classifications
H; H10; H10N; H10N10/00; H10N10/80; H10N10/81; H10N10/817; H10N10/01
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
95 words
A thermoelectric unit, comprising (a.) a thermoelectric semiconductor element; (b.) at least one electrically conductive element; (c.) a thermally and electrically conductive bonding structure disposed between and bonded to said thermoelectric element and to said electrically conductive element whereby the conducting element and thermoelectric element are in electrical and thermal contact, said bonding structure comprising at least 75 weight percent bismuth; and (d.) a layer comprising at least one metal selected from the group consisting of nickel, copper and iron adhered to and interposed between said bonding structure and at least one of said elements.
Claim 2
Dependent Claim
95 words
A thermoelectric unit, comprising (a.) a thermoelectric semiconductor element; (b.) at least one electrically conductive element; (c.) a thermally and electrically conductive bonding structure disposed between and bonded to said thermoelectric element and to said electrically conductive element whereby the conducting element and thermoelectric element are in electrical and thermal contact, said bonding structure comprising at least 75 weight percent bismuth; and (d.) a layer comprising at least one metal selected from the group consisting of nickel, copper and iron adhered to and interposed between said bonding structure and at least one of said elements.
Claim 3
Dependent Claim
36 words
A thermoelectric unit, as defined in claim 1, wherein said bonding structure additionally comprises at least one metallic element selected from the groups IB, IIA, IIB, IIIB, VB, VIB and VIIIA of the Periodic Table (IUPAC).
Claim 4
Dependent Claim
29 words
A thermoelectric unit, as defined in claim 1, wherein said bonding structure additionally comprises at least one element selected from the group consisting of antimony, copper, aluminum and silver.
Claim 5
Dependent Claim
16 words
A thermoelectric unit, as defined in claim 1, wherein said thermoelectric element contains bismuth and tellurium.
Claim 6
Dependent Claim
16 words
A thermoelectric unit, as defined in claim 1, wherein said thermoelectric element contains lead and tellurium.
Claim 7
Dependent Claim
32 words
A thermoelectric unit as defined in claim 1, wherein said electrically conductive elements are formed from at least one metal selected from the group consisting of copper, zinc, aluminum, nickel and iron.
Claim 8
Dependent Claim
108 words
A thermoelectric device, comprising: (a.) an n-type thermoelectric element; (b.) a p-type thermoelectric element connected electrically in series and thermally in parallel with said n-type thermoelectric element; (c.) a plurality of electrically conductive elements in thermal and electrical contact with opposite sides of each of said thermoelectric elements to form said series and parallel connections; (d.) bonding structures bonded between said electrically conductive elements and said thermoelectric elements, said bonding structures comprising at least 75 weight percent bismuth, and (e.) a layer comprising at least one metal selected from the group consisting of nickel, copper and iron adhered to and interposed between said bonding structure and said elements.
Claim 9
Dependent Claim
108 words
A thermoelectric device, comprising: (a.) an n-type thermoelectric element; (b.) a p-type thermoelectric element connected electrically in series and thermally in parallel with said n-type thermoelectric element; (c.) a plurality of electrically conductive elements in thermal and electrical contact with opposite sides of each of said thermoelectric elements to form said series and parallel connections; (d.) bonding structures bonded between said electrically conductive elements and said thermoelectric elements, said bonding structures comprising at least 75 weight percent bismuth, and (e.) a layer comprising at least one metal selected from the group consisting of nickel, copper and iron adhered to and interposed between said bonding structure and said elements.
Claim 10
Dependent Claim
34 words
A thermoelectric device as defined in claim 7, wherein said bonding structure additionally comprises at least one element selected from the groups IB, IIA, IIB, IIIB, VB, VIB and VIIIA of the Periodic Table.
Claim 11
Dependent Claim
28 words
A thermoelectric device, as defined in claim 8, wherein said additional element comprises at least one metal selected from the group consisting of antimony, copper, aluminum and silver.
Claim 12
Dependent Claim
16 words
A thermoelectric device, as defined in claim 7, wherein said thermoelectric element contains bismuth and tellurium.
Claim 13
Dependent Claim
16 words
A thermoelectric device, as defined in claim 7, wherein said thermoelectric element contains lead and tellurium.
Claim 14
Dependent Claim
38 words
A thermoelectric device, as defined in claim 7, comprising a plurality of n- and p-type elements and wherein said n- and p-type elements are arranged in an alternating manner and conductively interconnected to form a series current path.
Claim 15
Dependent Claim
38 words
A thermoelectric device, as defined in claim 7, comprising a plurality of n- and p-type elements and wherein said n- and p-type elements are arranged in an alternating manner and conductively interconnected to form a parallel current path.
Claim 16
Dependent Claim
39 words
A thermoelectric device as defined in claim 7, comprising a plurality of n- and p-type elements and wherein said n- and p-type elements are arranged in an alternating manner and conductively interconnected to form a mixed series-parallel current path.
Claim 17
Dependent Claim
37 words
A thermoelectric device as defined in claim 7, further comprising a first continuous substrate bonded to said electrically conductive elements on the outer surface opposite to the thermoelectric elements, whereby the integrity of the device is improved.
Claim 18
Dependent Claim
37 words
A thermoelectric device as defined in claim 15, further comprising a second continuous substrate bonded to the outer surface of said electrically conductive elements on the opposite side of said thermoelectric device from the first continuous substrate.
Claim 19
Dependent Claim
21 words
A thermoelectric device as defined in claim 7, further comprising a casting compound substantially filling the space between said thermoelectric elements.
Claim 20
Dependent Claim
24 words
A thermoelectric device as defined in claim 17, wherein said casting compound is selected from the group consisting of epoxies and ceramic cement compounds.
Claim 21
Dependent Claim
83 words
A process useful in the manufacture of the thermoelectric unit of claim 1, comprising the steps of (a) forming a layer comprising at least one metal selected from the group consisting of nickel, copper and iron on at least one of said elements and (b) contacting a bonding material comprising at least 85 weight percent bismuth with said thermoelectric semiconductor element and to said electrically conductive element at a temperature sufficient to melt the bonding material whereby an adherent bonding structure is formed.
Claim 22
Dependent Claim
31 words
The process of claim 19, further comprising the step of contacting a flux comprising rosin, activated rosin or stearic acid, with one of said elements before contacting with said bonding material.
Claim 23
Dependent Claim
18 words
The process of claim 19, wherein said metal layer is formed by cladding the metal onto the element.
Claim 24
Dependent Claim
18 words
The process of claim 19, wherein said metal layer is formed by plating the metal onto the element.
Claim 25
Dependent Claim
19 words
The process of claim 22, wherein said metal layer is formed by electroless plating the metal onto the element.
Claim 26
Dependent Claim
18 words
The process of claim 22, wherein said metal layer is formed by electroplating the metal onto the element.
Claim 27
Dependent Claim
26 words
The process of claim 19, comprising not pressing the bonding material with the thermoelectric semiconductor element and the electrically conductive element to melt the bonding material.
Claim 28
Dependent Claim
12 words
The process of claim 19 comprising applying the bonding structure by evaporation.
Claim 29
Dependent Claim
13 words
The process of claim 19 comprising applying the bonding structure by powder pressing.
Claim 30
Dependent Claim
40 words
The process of claim 19, comprising the step of simultaneously contacting each of said bonding materials to the respective semiconductor element and electrically conductive element at a temperature sufficient to melt each said bonding material and form adherent bonding structures.
Claim 31
Dependent Claim
20 words
The process of claim 19, comprising the step of substantially filling the space between said thermoelectric elements with casting compound.
Claim 32
Dependent Claim
15 words
The process of claim 19, further comprising the step of lapping the assembled device flat.
Claim 33
Dependent Claim
52 words
The process of claim 19, further comprising the step of annealing the assembled device for a time and at a temperature sufficient to accelerate the attainment of an equilibirium state said temperature being suffiently low to substantially avoid sublimation or melting of said thermoelectric elements, said bonding structure or said conducting elements.
Claim 34
Dependent Claim
38 words
A process as described in claim 31, wherein said step of annealing comprises heating said device for at least two days at about 250° C. and allowing said device to slowly cool to room temperature under ambient conditions.
Claim 35
Dependent Claim
32 words
A process as described in claim 31, wherein said step of annealing comprises heating said device in an atmosphere of gas selected from the group consisting of argon, nitrogen, hydrogen and helium.
Claim 36
Dependent Claim
28 words
A method for generating electricity comprising subjecting the thermoelectric device of claim 7 to a temperature gradient and connecting the respective conductive elements to complete an electrical circuit.
Claim 37
Dependent Claim
54 words
A method for generating electricity from a thermal gradient, comprising: (a) orienting the device of claim 7 so that the direction of the thermal gradient is parallel to the desired direction of current flow through the thermoelectric elements; (b) maintaining said thermal gradient; (c) completing an electric circuit whereby an electrical current is generated.
Claim 38
Dependent Claim
42 words
A method of generating a thermal gradient comprising subjecting the thermoelectric device of claim 7 to the flow of an electric current, thereby creating a temperature gradient due to the Peltier effect along the direction of current flow in the thermoelectric element.
Claim 39
Dependent Claim
64 words
A method of effecting refrigeration comprising thermally connecting the cold junction of the thermoelectric device of claim 7 to an object to be refrigerated, thermally connecting the hot junction to a heat sink, and applying a direct current through the semiconductor elements of the device in a direction parallel to the temperature gradient in a direction so as to maintain the desired thermal gradient.
Claim 40
Dependent Claim
62 words
A method of effecting thermoelectric heating comprising connecting the hot junction of the thermoelectric device of claim 7 to an object to be heated, connecting the cold junction to a heat sink and applying a direct current through the semiconductor elements of the device in a direction parallel to the temperature gradient in direction so as to maintain the desired thermal gradient.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-12-25 | 1988-06-25 | 1988-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-12-25 | 1992-06-25 | 1992-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-12-25 | 1996-06-25 | 1996-12-25 | $7700.00 | Window Closed / Lapsed |