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US5227339A
Expired / Lapsed
US
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Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device composed of the substrate
Assignee: Fujitsu Ltd
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Filing: 1991-05-17
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Granted: 1993-07-13
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Expires: 2011-05-17
Abstract
Abstract Disclosed is a method of manufacturing a semiconductor wafer or SOI substrate having a total thickness variation (TTV) of 1 micrometer or less which is required to make a future semiconductor integrated circuit of high density. A semiconductor crystal disk made by slicing a semiconductor crystal ingot is flattened by being subjected to a flattening step such as a grinding, chemical-mechanical polishing or the like and then subjected to a step for providing an asymmetric configuration such as an orientation flat (OF) and the like. With this process, the deterioration of flatness due to the presence of the OF and the like can be prevented. Further, a flattening step conventionally carried out by lapping is replaced by surface grinding, by which the flatness of a wafer is improved and an etching step following the lapping can be omitted. The introduction of this process enables semiconductor wafers having a TTV of 1 micrometer or less and a diameter of 6 inches to be obtained at a yield of 90% or more. In addition, the above method can also be applied to an SOI substrate composed of two silicon wafers bonded through an insulating layer to uniformly thin one of the silicon wafers to a few micrometers, whereby the practical use of a semiconductor integrated circuit of a SOI structure will be accelerated.
Inventors
- 👤 Sadahiro Kishii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:56
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/123; B; B28; B28D; B28D5/00; H10P52/00; H10P52/40; H10P52/402; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; B28D5/02; B28D5/022
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
109 words
A method of manufacturing a semiconductor substrate, comprising the steps of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape with a cylindrical surface; (b) slicing said ingot into a disk having circular surfaces, a center and a circumference; (c) applying a mechanical flattening to at least one of said circuit surfaces to produce a flattened circular surface; and (d) producing, after performing steps (a)-(c), a cutout of a portion of said disk at the circumference of said disk so that said disk is rotationally asymmetric with respect to an axis passing through the center of said disk and perpendicular to the flattened circular surface.
Claim 2
Independent Claim
109 words
A method of manufacturing a semiconductor substrate, comprising the steps of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape with a cylindrical surface; (b) slicing said ingot into a disk having circular surfaces, a center and a circumference; (c) applying a mechanical flattening to at least one of said circuit surfaces to produce a flattened circular surface; and (d) producing, after performing steps (a)-(c), a cutout of a portion of said disk at the circumference of said disk so that said disk is rotationally asymmetric with respect to an axis passing through the center of said disk and perpendicular to the flattened circular surface.
Claim 3
Dependent Claim
28 words
A method of manufacturing a semiconductor substrate according to claim 1, wherein said applying in step (c) flattens at least one of said circular surfaces with rotary grinding.
Claim 4
Dependent Claim
37 words
A method of manufacturing a semiconductor substrate according to claim 1, wherein said producing of the cutout in step (d) comprises cutting said disk along a straight line connecting two points on the circumference of said disk.
Claim 5
Dependent Claim
91 words
A method of manufacturing a semiconductor substrate according to claim 1, wherein said ingot has a rotationally symmetric axis of the cylindrical surface. wherein said method further comprises the step of (e) forming a straight mark parallel to the rotationally symmetric axis of said ingot on the cylindrical surface of said ingot prior to slicing said ingot in step (b), and wherein said producing of the cutout is based on a mark on the circumference of said disk produced from the straight mark when said ingot is sliced in step (b).
Claim 6
Dependent Claim
92 words
A method of manufacturing a semiconductor substrate according to claim 1, wherein said ingot has a rotationally symmetric axis of the cylindrical surface, wherein said method further comprises the step of (e) forming two straight marks parallel to the rotationally symmetric axis of said ingot on the cylindrical surface of said ingot prior to slicing said ingot in step (b), and wherein said producing of the cutout is based on two marks on the circumference of said disk produced from the two straight marks when said ingot is sliced in step (b).
Claim 7
Dependent Claim
44 words
A method of manufacturing a semiconductor substrate according to claim 1, further comprising the step of (e) beveling the circumference of said disk prior to the step of said applying the mechanical force in step (c) to at least one of the circular surfaces.
Claim 8
Dependent Claim
30 words
A method of manufacturing a semiconductor substrate according to claim 4, wherein said producing of the straight mark comprises scanning a laser beam on the cylindrical surface of said ingot.
Claim 9
Dependent Claim
23 words
A method of manufacturing a semiconductor substrate according to claim 1, further comprising the step of (e) mirror finishing said flattened circular surface.
Claim 10
Dependent Claim
23 words
A method of manufacturing a semiconductor substrate according to claim 8, wherein said mirror finishing in step (e) is performed by chemical-mechanical polishing.
Claim 11
Independent Claim
279 words
A method of manufacturing a semiconductor device, comprising the step of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape; (b) slicing said ingot into disks having circular surfaces, a center and a circumference; (c) flattening at least one of said circular surfaces on each of a first disk and a second disk to produce at least one flattened circular surface on each of said first and second disks; (d) mirror finishing said at least one flattened circular surface of each of said first and second disks to produce at least one mirror finished surface on each of said first and second disks; (e) forming an insulating layer on said at least one mirror finished surface of at least one of said first and second disks; (f) bonding said at least one mirror finished surface on each of said first and second disks with intervention of said insulating layer therebetween; (g) thinning said first disk after said bonding in step (f), to expose a working surface of said first disk; (h) producing a cutout of a portion of said first and second disks at the circumference of each of said first and second disks after said thinning of said first disk in step (g), so that said first and second disks are rotationally asymmetric with respect to an axis passing through the center of said first disk and perpendicular to the working surface of said first disk; (i) mirror finishing the working surface of said first disk to produce a mirror finished working surface of said disk; and (i) introducing impurities into a predefined region of the mirror finished working surface of said first disk.
Claim 12
Independent Claim
279 words
A method of manufacturing a semiconductor device, comprising the step of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape; (b) slicing said ingot into disks having circular surfaces, a center and a circumference; (c) flattening at least one of said circular surfaces on each of a first disk and a second disk to produce at least one flattened circular surface on each of said first and second disks; (d) mirror finishing said at least one flattened circular surface of each of said first and second disks to produce at least one mirror finished surface on each of said first and second disks; (e) forming an insulating layer on said at least one mirror finished surface of at least one of said first and second disks; (f) bonding said at least one mirror finished surface on each of said first and second disks with intervention of said insulating layer therebetween; (g) thinning said first disk after said bonding in step (f), to expose a working surface of said first disk; (h) producing a cutout of a portion of said first and second disks at the circumference of each of said first and second disks after said thinning of said first disk in step (g), so that said first and second disks are rotationally asymmetric with respect to an axis passing through the center of said first disk and perpendicular to the working surface of said first disk; (i) mirror finishing the working surface of said first disk to produce a mirror finished working surface of said disk; and (i) introducing impurities into a predefined region of the mirror finished working surface of said first disk.
Claim 13
Dependent Claim
31 words
A method of manufacturing a semiconductor substrate according to claim 5, wherein said producing of the two straight marks comprises scanning a laser beam on the cylindrical surface of said ingot.
Claim 14
Independent Claim
84 words
A method of manufacturing a semiconductor substrate, comprising the steps of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape; (b) slicing said ingot into a disk having surfaces and a circumference; (c) applying a mechanical flattening to at least one of said surfaces to produce at least one flattened surface; and (d) cutting after said flattening in step c, at least one portion of said disk at the circumference of said disk having said at least one flattened surface.
Claim 15
Independent Claim
84 words
A method of manufacturing a semiconductor substrate, comprising the steps of: (a) forming an ingot composed of semiconductor crystal and having a cylindrical shape; (b) slicing said ingot into a disk having surfaces and a circumference; (c) applying a mechanical flattening to at least one of said surfaces to produce at least one flattened surface; and (d) cutting after said flattening in step c, at least one portion of said disk at the circumference of said disk having said at least one flattened surface.
References Cited (Backward Citations)
US4638552A
Cited
US5051378A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-12 | 1997-01-11 | 1997-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-12 | 2001-01-11 | 2001-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-12 | 2005-01-11 | 2005-07-13 | $7700.00 | Window Closed / Lapsed |