Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
112 words
An interconnection forming method comprising: a process step of forming a refractory metal layer in a manner to coat the entire surface of an insulating film having a through hole opened therein to allow the inner portion of said through hole to be buried; a first etch-back process step of etching said refractory metal layer immediately before at least a portion of the upper surface of said insulating film is exposed; and a second etch-back process step of etching the remainder of said refractory metal layer until the upper surface of said insulating film is successively exposed while coating a wafer within an etching chamber used at said first etch-back process step.
Claim 2
Dependent Claim
112 words
An interconnection forming method comprising: a process step of forming a refractory metal layer in a manner to coat the entire surface of an insulating film having a through hole opened therein to allow the inner portion of said through hole to be buried; a first etch-back process step of etching said refractory metal layer immediately before at least a portion of the upper surface of said insulating film is exposed; and a second etch-back process step of etching the remainder of said refractory metal layer until the upper surface of said insulating film is successively exposed while coating a wafer within an etching chamber used at said first etch-back process step.
Claim 3
Dependent Claim
32 words
An interconnection forming method as set forth in claim 1, wherein said refractory metal layer is any one of a tungsten layer, a molybdenum layer, a tantalum, layer, and a titanium layer.
Claim 4
Dependent Claim
190 words
An interconnection forming method comprising: a process step of forming a refractory metal layer in a manner to coat the entire surface of an insulating film having a through hole opened therein to allow the inner portion of said through hole to be buried; a first etch-back process step of etching said refractory metal layer immediately before at least a portion of the upper surface of said insulating film is exposed by using an etching gas including at least one kind of sulfur fluoride selected from a compound group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 and SF 6 ; and a second etch-back process step of etching the remainder of said refractory metal layer until the upper surface of said insulating film is successively exposed while cooling a wafer within an etching chamber used in said first etch-back process step by using an etching gas including at least one kind of sulfur fluoride except for SF 6 selected from said compound group and any one kind of compound selected from H 2 , H 2 S and silane compound.
Claim 5
Dependent Claim
190 words
An interconnection forming method comprising: a process step of forming a refractory metal layer in a manner to coat the entire surface of an insulating film having a through hole opened therein to allow the inner portion of said through hole to be buried; a first etch-back process step of etching said refractory metal layer immediately before at least a portion of the upper surface of said insulating film is exposed by using an etching gas including at least one kind of sulfur fluoride selected from a compound group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 and SF 6 ; and a second etch-back process step of etching the remainder of said refractory metal layer until the upper surface of said insulating film is successively exposed while cooling a wafer within an etching chamber used in said first etch-back process step by using an etching gas including at least one kind of sulfur fluoride except for SF 6 selected from said compound group and any one kind of compound selected from H 2 , H 2 S and silane compound.
Claim 6
Dependent Claim
23 words
An interconnection forming method as set forth in claim 3, wherein said refractory metal layer is a tungsten layer or a molybdenum layer.